BFR750L3RH Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free very thin small leadless package (package height 0.32 mm max. ideal for modules) • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR750L3RH Marking R8 Pin Configuration 1=B 1 2=C 3=E Package TSLP-3-9 2013-09-09 BFR750L3RH Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 4 TA = -55 °C 3.5 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 90 Base current IB 9 Total power dissipation1) Ptot 360 mW Junction temperature TJ 150 °C Storage temperature TStg mA TS ≤ 96°C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 150 K/W Values Unit Electrical Characteristics at T A = 25 °C, unless otherwise specified Symbol Parameter min. typ. max. V(BR)CEO 4 4.7 - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 160 250 400 - DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 60 mA, VCE = 3 V, pulse measured 1T S is measured on the emitter lead at the soldering point to the pcb 2For the definition of R thJS please refer to Application Note AN077 (Thermal 2 Resistance Calculation) 2013-09-09 BFR750L3RH Electrical Characteristics at TA = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT - 37 - Ccb - 0.24 0.42 Cce - 0.31 - Ceb - 0.97 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 60 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Minimum noise figure dB NFmin IC = 25 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 25 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) - 0.6 - - 1.1 - Gms - 21 - dB Gma - 11.5 - dB IC = 60 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 60 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain IC = 60 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz dB - 18 - - 8 - IP3 - 29.5 - P-1dB - 16.5 - IC = 60 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 6 GHz Third order intercept point at output2) dBm VCE = 3 V, IC = 60 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB compression point at output IC = 60 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1/2 ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2013-09-09 BFR750L3RH Total power dissipation P tot = ƒ(TS) Permissible Puls Load RthJS = ƒ (t p) 400 350 300 2 10 RthJS [K/W] Ptot [mW] 250 200 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D=0 150 1 10 100 → tp ← D=tp /T 50 ← T → 0 10 0 0 15 30 45 60 75 90 105 120 135 −8 10 150 TS [°C] −6 10 −4 10 −2 10 0 10 tp [s] Permissible Pulse Load Collector-base capacitance Ccb = ƒ (VCB) Ptotmax/PtotDC = ƒ(tp ) f = 1 MHz 2 10 0.6 → tp ← D=tp /T 0.55 0.5 ← T → 0.45 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 1 10 0.35 Ccb [pF] Ptotmax/PtotDC 0.4 0.3 0.25 0.2 0.15 0.1 0.05 0 10 −8 10 0 −6 10 −4 10 −2 10 0 10 0 2 4 6 8 10 12 VCB [V] tp [s] 4 2013-09-09 BFR750L3RH Transition frequency fT = ƒ(IC) Power gain Gma, Gms = ƒ (f) VCE = parameter, f = 1 GHz VCE = 3 V, IC = 60 mA 45 40 2V to 4V 40 35 1.00V 35 30 30 0.75V 25 G ms G [dB] fT [GHz] 25 20 20 15 15 |S |2 21 10 10 5 5 0.50V 0 0 0 10 20 30 40 50 60 70 80 0 1 2 3 IC [mA] 4 5 6 f [GHz] Power gain Gma, Gms = ƒ (IC) Power gain Gma, Gms = ƒ (VCE ) VCE = 3 V IC = 60 mA f = parameter f = parameter 28 27 0.90GHz 0.90GHz 26 24 24 1.80GHz 21 22 2.40GHz 18 1.80GHz 3.00GHz 15 2.40GHz G [dB] G [dB] 20 18 4.00GHz 5.00GHz 12 16 3.00GHz 14 4.00GHz 6.00GHz 9 5.00GHz 6 12 6.00GHz 3 10 8 0 0 10 20 30 40 50 60 70 80 0 IC [mA] 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE [V] 5 2013-09-09 Package TSLP-3-9 6 BFR750L3RH 2013-09-09 BFR750L3RH Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2013-09-09