Diodes DMN10H170SFDE-13 Halogen and antimony free. â greenâ device (note 3) Datasheet

DMN10H170SFDE
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits

0.6mm Profile – Ideal for Low Profile Applications
RDS(ON) max
ID max
TA = +25°C

PCB Footprint of 4mm2

Low On-Resistance
160mΩ @ VGS = 10V
2.9A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
V(BR)DSS
100V
200mΩ @ VGS = 4.5V
2.6A
Mechanical Data
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications




Case: U-DFN2020-6

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4

Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6
G
S
Bottom View
Equivalent Circuit
Pin Out
Ordering Information (Note 4)
Part Number
DMN10H170SFDE-7
DMN10H170SFDE-13
Notes:
Compliance
Standard
Standard
Case
U-DFN2020-6
U-DFN2020-6
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2020-6
YM
ADVANCE INFORMATION
ADVANCED INFORMATION
Product Summary
7H
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
Mar
3
7H = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2016
D
Apr
4
2017
E
May
5
Jun
6
1 of 6
www.diodes.com
2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2020
I
Nov
N
Dec
D
February 2015
© Diodes Incorporated
DMN10H170SFDE
Maximum Ratings (@TA = +25°C unless otherwise specified.)
ADVANCE INFORMATION
ADVANCED INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
t<10s
Value
100
±20
2.9
2.3
ID
A
3.4
2.7
10
2.5
4.7
16
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Units
V
V
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Value
0.66
0.42
189
132
2.03
1.31
61
43
9.3
-55 to +150
PD
RJA
PD
RJA
RJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
100
-
-
1
±100
V
µA
nA
VGS = 0V, ID = 250μA
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS(ON)
-
mΩ
VSD
-
3.0
160
200
1.0
V
Static Drain-Source On-Resistance
2.0
116
126
0.9
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5.0A
VGS = 4.5V, ID =5.0A
VGS = 0V, IS = 10A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Trr
Qrr
-
1167
36
25
1.3
4.9
9.7
2.0
2.0
10.5
11.1
42.6
12.8
30.3
35.2
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
Test Condition
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 80V, ID = 12.8A
VDS = 50V, ID = 12.8A
VGS = 10V, RG = 25Ω
IF = 12.8A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .UIS in production with L = 1.43mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SFDE
10
10
VDS = 5.0V
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
6
4
2
6
TA = 150°C
4
TA = 125°C
TA = 85°C
2
TA = 25°C
TA = -55°C
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.20
0.18
VGS = 1.8V
0.16
0.14
VGS = 2.5V
0.12
VGS = 4.5V
0.10
0.08
0.06
0.04
0.02
0
1
2
3
4
5
6
7
8
ID, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
9
2.6
2.2
VGS = 10V
ID = 10A
2.0
1.8
1.6
VGS = 5V
ID = 5A
1.4
1.2
1.0
0.8
0.6
0.4
50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
1
2
3
4
VGS, GATE-SOURCE VOLTAGE
Fig. 2 Typical Transfer Characteristics
VGS= 4.5V
0.35
0.30
TA = 150°C
0.25
TA = 125°C
0.20
TA = 85°C
0.15
TA = 25°C
0.10
TA = -55°C
0.05
0
0
3 of 6
www.diodes.com
5
0.40
10
2.8
2.4
0
2.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCE INFORMATION
ADVANCED INFORMATION
8
2
4
6
8
ID, DRAIN CURRENT
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
10
0.30
VGS = 10V
ID = 10A
0.25
0.20
VGS = 5V
ID = 5A
0.15
0.10
0.05
0
- 50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
February 2015
© Diodes Incorporated
DMN10H170SFDE
10
2.0
IS, SOURCE CURRENT (V)
VGS(th), GATE THRESHOLD VOLTAGE (V)
9
2.5
ID = 250µA
1.5
1.0
8
7
6
5
TA = 25°C
4
3
2
0.5
1
0
0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
10
Ciss
Coss
Crss
f = 1MHz
0
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
40
8
VDS = 80V
ID = 12.8A
6
4
2
0
0
2
4
6
8
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate Charge
10
100
RDS(on)
Limited
ID , DRAIN CURRENT (A)
ADVANCE INFORMATION
ADVANCED INFORMATION
3.0
10
1
DC
PW = 10s
0.1
PW = 1s
PW = 100ms
TJ(m ax) = 150°C
0.01 T = 25°C
A
PW = 10ms
VGS = 10V
Single Pulse
0.001 DUT on 1 * MRP Board
0.1
PW = 1ms
PW = 100µs
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
1000
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SFDE
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
ADVANCED INFORMATION
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * RJA
RJA = 61°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
e
b(6X)
5 of 6
www.diodes.com
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
February 2015
© Diodes Incorporated
DMN10H170SFDE
Suggested Pad Layout
ADVANCE INFORMATION
ADVANCED INFORMATION
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions
Y3 Y2
X2
C
X
X1
X2
Y
Y1
Y2
Y3
Y1
X1
X (6x)
C
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
6 of 6
www.diodes.com
February 2015
© Diodes Incorporated
Similar pages