Renesas BCR08AS Low power use non-insulated type, planar passivation type Datasheet

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April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
3
3.9±0.3
2
2.5±0.1
0.8 MIN
1
1.5±0.1
0.5±0.07
0.4 +0.03
–0.05
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
2
•
•
•
•
IT (RMS) ..................................................................... 0.8A
VDRM ....................................................................... 600V
IFGT !, IRGT !, IRGT # .............................................. 5mA
IFGT # ..................................................................... 10mA
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
12 (marked “BF”)
VDRM
Repetitive peak off-state voltage ✽1
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
720
V
Symbol
Parameter
Conditions
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽3
ITSM
Surge on-state current
60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Ratings
Unit
0.8
A
8
A
0.26
A2s
1
W
0.1
W
Peak gate voltage
6
V
IGM
Peak gate current
1
Tj
Junction temperature
Tstg
–40 ~ +125
Storage temperature
—
Weight
–40 ~ +125
Typical value
48
A
°C
°C
mg
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
—
—
1.0
mA
VTM
On-state voltage
Tc=25°C, ITM=1.2A, Instantaneous measurement
—
—
2.0
V
VFGT !
!
—
—
2.0
V
VRGT !
@
—
—
2.0
V
—
—
2.0
V
VRGT #
Gate trigger voltage ✽2
#
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VFGT #
$
—
—
2.0
IFGT !
!
—
—
5
mA
—
—
5
mA
—
—
5
mA
—
—
10
mA
IRGT !
IRGT #
@
Gate trigger current ✽2
#
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
$
IFGT #
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.1
—
—
V
Rth (j-a)
Thermal resistance
Junction to case ✽3
—
—
65
°C/ W
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
Tj=125°C
0.5
—
—
V/µs
✽4
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C
MAIN CURRENT
2. Rate of decay of on-state commutating current
(di/dt)c=–0.4A/ms
TIME
(di/dt)c
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
Tj = 125°C
100
7
5
4
3
2
10–1
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTICS
101
7
5
4
3
2
Tj = 25°C
0
1
2
3
4
ON-STATE VOLTAGE (V)
5
8
6
4
2
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
102
7
5
3
2
VGM = 10V
PGM = 1W
101
7
5
3
2
PG(AV)
= 0.1W
VGT
100
7
5
3
2
IGM = 1A
IFGT I,
IRGT I, IRGT III
IFGT III
VGD = 0.2V
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
103
7
5
4
3
2
TYPICAL EXAMPLE
IFGT III
IFGT I IRGT III IRGT I
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TYPICAL EXAMPLE
VFGT I VFGT III
102
7
5
4
3
2
VRGT I VRGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
103
7
5
4
3
2
102
7
5
3
2
JUNCTION TO AMBIENT
JUNCTION TO CASE
101
7
5
3
2
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
2.0
160
1.6
1.2
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0.8
0.4
0
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
103
7
5
3
2
JUNCTION TEMPERATURE (°C)
0
0.4
0.8
1.2
1.6
RMS ON-STATE CURRENT (A)
2.0
CASE TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
NATURAL CONVECTION
RESISTIVE,
120
INDUCTIVE
100
LOADS
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
100 (%)
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
TYPICAL EXAMPLE
3
2
102
7
5
3
2
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
DISTRIBUTION
T2+, G–
TYPICAL EXAMPLE
101
7
5
3
2
100
7
5
3
2
T2+, G+ 
 TYPICAL
T2– , G– 
EXAMPLE
T2– , G+ 
10–1
–40
0
40
80
120
100 (%)
102
7
5
3
2
103
7
5
101
–60 –40 –20 0 20 40 60 80 100 120 140
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
LACHING CURRENT (mA)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
160
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
140
Tj = 125°C
120
I QUADRANT
100
80
60
III QUADRANT
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
100 (%)
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
101
7
5
TYPICAL
EXAMPLE
Tj = 125°C
IT = 1A
τ = 500µs
VD = 200V
f = 3Hz
3
2
100
7
5
3
2
III QUADRANT
MINIMUM
CHARACTERISTICS
VALUE
10–1
10–1
2
3
I QUADRANT
5 7 100
2
3
5 7 101
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
5
4
3
2
TYPICAL EXAMPLE
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
A
6V
V
102
7
IRGT I IRGT III IFGT I
5
IFGT III
4
3
2
101 0
10
2 3 4 5 7 101
TEST PROCEDURE 1
6Ω
2 3 4 5 7 102
A
6V
RG
RG
V
TEST PROCEDURE 2
6Ω
A
6V
V
RG
A
6V
V
RG
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE 3
TEST PROCEDURE 4
Mar. 2002
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