FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A • Low Gate Charge (Typ. 2.78 nC) The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. • Low Crss (Typ. 2.04 pF) • Fast Switching Applications • 100% Avalanche Tested • LED Monitor Backlight • Improved dv/dt Capability • LED TV Backlight • RoHS Compliant • LED Lighting • Consumer Appliances, DC-DC converter (Step up & Step down) 3 3 1 2 4 5 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 4,5 1 TO252-5L 2 Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) Unit V ±20 V 6.8 - Continuous (TC = 100oC) A 4.3 IDM Drain Current (Note 1) 13.6 A EAS Single Pulsed Avalanche Energy (Note 2) 5.08 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation - Pulsed FDD1600N10ALZD 100 (TC = 25oC) - Derate Above 25oC 14.9 W 0.12 W/oC IF Diode Continuous Forward Current (TC = 124oC) 4 A IFM Diode Maximum Forward Current 40 A TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD1600N10ALZD RθJC Thermal Resistance, Junction to Case for MOSFET, Max. 8.4 RθJC Thermal Resistance, Junction to Case for Diode, Max. 3.3 RθJA Thermal Resistance, Junction to Ambient, Max. 87 ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 1 Unit o C/W www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 Part Number FDD1600N10ALZD Top Mark 1600N10ALZD Package TO-252 5L Packing Method Tape and Reel Reel Size 13” Tape Width 16 mm Quantity 2500 units Electrical Characteristics of the MOSFET TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.1 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, VGS = 0 V, TC = 125oC - - 500 VGS = ±20 V, VDS = 0 V - - ±10 μA VGS = VDS, ID = 250 μA V μA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.4 2.1 2.8 VGS = 10 V, ID = 3.4 A - 124 160 VGS = 5 V, ID = 2.1 A VDS = 10 V, ID = 6.8 A - 175 375 - 19.6 - mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance VDS = 50 V, VGS = 0 V Qg(tot) Total Gate Charge at 10V VGS = 10 V Qg(tot) Total Gate Charge at 5V VGS = 5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge Qsync Total Gate Charge Sync. Qoss Output Charge VDS = 50 V, VGS = 0 V, f = 1 MHz VDD = 50 V, ID = 6.8 A - 169 225 pF - 43 55 pF - 2.04 - pF 85 - pF - 2.78 3.61 nC 1.5 1.95 nC - 0.72 - nC nC - 0.56 - - 4.02 - V VDS = 0 V, ID = 3.4 A - 2.5 - nC VDS = 50 V, VGS = 0 V - 5.2 - nC - 7 24 ns - 2 14 ns - 13 36 ns - 2 14 ns - 2.1 - Ω (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 50 V, ID = 6.8 A, VGS = 10 V, RG = 4.7 Ω (Note 4) f = 1 MHz Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.8 A - - 1.3 V trr Reverse Recovery Time - 37 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 6.8 A, VDS = 50 V, dIF/dt = 100 A/μs - 42 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 3.18 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 2 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Package Marking and Ordering Information VR Symbol Parameter DC Blocking Voltage Test Conditions IR = 1 mA VFM Maximum Instantaneous Forward Voltage IF = 4 A IRM Maximum Instantaneous Reverse Current @ rated VR trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge WAVL Avalanche Energy (L = 40 mH) ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 TC = 25oC Max. - - - 2.5 - 1.01 - - - 50 TC = 125oC - - 1000 - 12.7 26 TC = 125oC - 17.1 - - 2.6 6 TC = 125oC - 3.8 - - 18.3 - TC = 125oC - 35.7 - 10 - - TC = 25oC TC = 25oC TC = 25oC 3 Typ. - TC = 125oC TC = 25oC IF = 4 A, dI/dt = 200 A/μs Min. 150 Unit V V uA ns A nC mJ www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Electrical Characteristics of the Diode TC = 25oC unless otherwise noted. Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 14 14 10 VGS = 15.0V 10.0V 8.0V 6.0V 5.0V 4.5V 4.0V 3.5V 1 *Notes: 1. 250μs Pulse Test o 0.3 0.3 ID, Drain Current[A] ID, Drain Current[A] 10 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] o 150 C o 25 C 1 o -55 C 0.1 5 *Notes: 1. VDS = 10V 2. 250μs Pulse Test Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1 2 3 4 5 VGS, Gate-Source Voltage[V] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 400 14 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 10 300 VGS = 5V 200 VGS = 10V 100 o 150 C o 25 C *Notes: 1. VGS = 0V o 0 *Note: TC = 25 C 0 5 10 15 ID, Drain Current [A] 1 0.3 20 Figure 5. Capacitance Characteristics 8 VGS, Gate-Source Voltage [V] Ciss 100 Capacitances [pF] 1.5 Figure 6. Gate Charge Characteristics 300 Coss 10 2. 250μs Pulse Test 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 Crss 6 4 2 0 100 4 VDS = 20V VDS = 50V VDS = 80V *Note: ID = 3.4A 0 0.5 1.0 1.5 2.0 2.5 Qg, Total Gate Charge [nC] 3.0 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics - MOSFET Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.8 *Notes: 1. VGS = 10V 2. ID = 3.4A 0.4 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 30 8 100us ID, Drain Current [A] ID, Drain Current [A] 10 1ms 1 10ms Operation in This Area is Limited by R DS(on) SINGLE PULSE 0.1 100ms DC o TC = 25 C 6 VGS = 10V 4 VGS = 5V 2 o TJ = 150 C o o 0.01 RθJC = 8.4 C/W RθJC = 8.4 C/W 1 10 100 VDS, Drain-Source Voltage [V] 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage 8 7 6 IAS, AVALANCHE CURRENT (A) 0.20 EOSS [μJ] 150 Figure 12. Unclamped Inductive Switching Capability 0.25 0.15 0.10 0.05 0 50 75 100 125 o TC, Case Temperature [ C] 0 20 40 60 80 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 5 4 TJ = 125 oC 2 1 0.001 100 TJ = 25 oC 3 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 5 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics - MOSFET (Continued) Figure 13. Forward Voltage Drop vs. Forward Current Figure 14. Reverse Current vs. Reverse Voltage 40 100 o TC = 125 C Reverse Current , IR [nA] Forward Current, IF [A] 10 o TC = 125 C o TC = 75 C o TC = 25 C 1 0.1 0.0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] 100 75 50 25 1 10 Reverse Voltage, VR [V] 40 60 80 Reverse Voltage, VR [V] 100 120 IF = 4A 18 o TC = 125 C o 15 TC = 75 C o TC = 25 C 12 10 100 100 Figure 17. Reverse Recovery Current vs. di/dt 200 300 di/dt [A/μs] 400 500 Figure 18. Forward Current Derating Curve 25 Average Forward Current, IF(AV) [A] 10 Reverse Recovery Current, Irr [A] 0.1 20 Typical Capacitance at 0V = 121 pF o 8 TC = 125 C o TC = 75 C 4 o TC = 25 C 2 0 100 o TC = 25 C Figure 16. Reverse Recovery Time vs. di/dt 125 6 o TC = 75 C 1 0.01 0.005 10 20 Figure 15. Junction Capacitance 0 0.1 10 IF = 4A 200 300 di/dt [A/μs] ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 400 20 15 10 5 0 25 500 6 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics - Diode (Continued) FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics (Continued) Figure 19. Transient Thermal Response Curve of MOSFET Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 20 10 0.5 0.2 PDM 0.1 1 t1 0.05 *Notes: 0.02 0.01 Single pulse 0.1 -5 10 t2 o 1. ZθJC(t) = 8.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 1 -1 10 10 [sec] tRectangular Pulse Duration Duration [sec] 1, RectangularPulse Figure 20. Transient Thermal Response Curve of Diode Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 4 0.5 1 0.2 0.1 PDM 0.05 t1 0.02 0.01 0.1 *Notes: Single pulse 0.01 -5 10 t2 o 1. ZθJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 -1 10 1 [sec] tRectangular Pulse Duration Duration [sec] 1, RectangularPulse ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 7 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) IG = const. Figure 21. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 22. Resistive Switching Test Circuit & Waveforms VGS Figure 23. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 8 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 24. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 9 www.fairchildsemi.com Driver VGS ( Driver) VGS (DUT) VDD VRG RG t 10V t DUT Qsync = VGS 1 ⋅ VR ( t ) dt RG G Figure 25. Total Gate Charge Qsync. Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 10 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) VCC FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Mechanical Dimensions Figure 26. TO252 (D-PAK), Molded, 5-Lead, Option AD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005 ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 11 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 12 www.fairchildsemi.com FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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