BCR199... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ) BCR199F/L3 BCR199T C 3 R1 1 B 2 E EHA07180 Type Marking Pin Configuration Package BCR199F* UBs 1=B 2=E 3=C - - - TSFP-3 BCR199L3* UB 1=B 2=E 3=C - - - TSLP-3-4 BCR199T* UBs 1=B 2=E 3=C - - - SC75 * Preliminary Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on voltage Vi(on) 50 Collector current IC 70 Total power dissipation- Ptot 250 BCR199L3, TS ≤ 135°C 250 BCR199T, TS ≤ 109°C 250 Tj Storage temperature Tstg 1 V mA mW BCR199F, TS ≤ 128°C Junction temperature Unit 150 °C -65 ... 150 Aug-29-2003 BCR199... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value BCR199F ≤ 90 BCR199L3 ≤ 60 BCR199T ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 - - V(BR)EBO 5 - - I CBO - - 100 nA h FE 120 - 630 - - - 0.3 V Vi(off) 0.4 - 0.8 Vi(on) 0.5 - 1.5 R1 32 47 62 fT - 200 - MHz Ccb - 3 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor kΩ AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Aug-29-2003 BCR199... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 -1 A IC h FE 10 -2 10 2 10 -3 10 1 -4 10 10 -3 10 -2 A 10 10 -4 0 -1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IC V 1 VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 10 -1 A 10 -2 IC hFE 10 -3 10 -4 10 -3 10 -5 10 -4 -1 10 10 0 10 1 V 10 10 -6 0 2 Vi(on) 1 2 V 4 Vi(off) 3 Aug-29-2003 BCR199... Total power dissipation Ptot = ƒ(TS) BCR199F Total power dissipation Ptot = ƒ(TS) BCR199L3 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 120 °C 100 TS Total power dissipation Ptot = ƒ(TS) BCR199T Permissible Puls Load R thJS = ƒ (tp) BCR199F 10 2 300 K/W RthJS mW Ptot 150 TS 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 150 10 0 100 50 0 0 20 40 60 80 100 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Aug-29-2003 BCR199... Permissible Puls Load R thJS = ƒ (tp) BCR199L3 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR199F 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 RthJS P totmax/P totDC 10 3 10 -5 10 -4 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -3 10 -2 s 10 10 -1 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 tp -2 s 10 0 10 0 tp Permissible Puls Load R thJS = ƒ (tp) BCR199T Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR199L3 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax/ PtotDC K/W 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 5 Aug-29-2003 BCR199... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR199T P totmax / P totDC 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Aug-29-2003