NXP AN11641 Relay replacement by nxp high-power bipolar transistors in lfpak56 Datasheet

AN11641
Relay replacement by NXP high-power bipolar transistors in
LFPAK56
Rev. 1 — 21 May 2015
Application note
Document information
Info
Content
Keywords
High-power bipolar transistors, PHPT series, LFPAK56, relay
Abstract
This application note describes NXP Semiconductors low VCEsat bipolar
PHPT portfolio. It gives a guideline which parameters must be taken into
account to drive a brushed DC motor.
AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
Revision history
Rev
Date
Description
1
20150521
Initial version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
AN11641
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
1. Introduction
NXP's bipolar power transistors in LFPAK use the latest BISS (Breakthrough In Small
Signal) transistor technology. They include mesh-emitter-design technology IP-platform to
achieve high-power devices with low VCEsat (saturation collector-emitter voltage) voltage
drop and high current gain. By this upmarket development, NXP wants to extend its
powerful and successful BISS transistor portfolio into the medium power and power range
in order to reach full traction for its high-power low VCEsat and high-current mesh-emitter
technology. To achieve this aim NXP uses a package supporting the high power
dissipation demand of its transistor portfolio. LFPAK offers superior low thermal
impedance Zth and therefore high thermal power capability up to 5 W.
Key parameters are current distribution (which should be as homogenous as possible)
over chip volume, and little spreading resistance in the metallization on the front of the
chip. In the case of BISS transistors, a homogeneous current distribution in the chip is
achieved by the latest mesh-emitter-design technology IP-platform, which breaks the
transistor down into corresponding cell structures. Soft-solder capable front and back
metallization combine this wafer technology with the LFPAK-package platform
requirements introducing new-developed metal stack interfaces for chip front and back
interface. They are optimized for low-resistivity contact of all transistor terminals to the
package outline.
The high-performance/high-reliability package platform LFPAK provides clip-bond for
emitter and base contact. This achieves low electrical and thermal resistivity of the
devices on all terminals. The electrical package resistivity is below 1 m. The overall
thermal impedance of the power transistors in the current chip-size range is below 6 K/W.
Soft-solder die and clip attach establish a rugged package architecture with up to
Tj(max) = 175 C high-temperature capability.
1.1 Features and benefits
• High power dissipation (Ptot)
• Suitable for high-temperature applications (175 °C)
• Space-saving 5 6 mm: package outline is half the size of equivalent transistors in
DPAK, SOT223, and other packages
•
•
•
•
•
AN11641
Application note
Low profile (1 mm)
High reliability and mechanical ruggedness thanks to solid copper clip (no wires)
High energy efficiency due to less heat generation
AEC-Q101 qualified
Future-proof, growing portfolio
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Rev. 1 — 21 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
2. Brushed DC motor control
Modern DC motors are used in various applications:
•
•
•
•
•
•
Power windows
Wipers
Blower motors (heating / cooling)
Trunk lifter
Steering wheel adjustment
Seat adjustment
A lot of these applications are using relays for driving the brushed DC motor. This
application note shows which parameter must be taken into account to replace relays by
bipolar transistors in H-bridge configuration controlled by a Pulse Width
Modulation (PWM) signal.
The used DC brushed motor for this application note has following characteristics:
• Nominal operating voltage: 12 V
• Nominal operating current: 3 A
• Blocked operating current: 8 A
2.1 Relay operation
GND
GND
M
K2
K1
12 V
12 V
K2
K1
aaa-017884
Every tactile switch turns a relay on and the motor turns left or right.
Fig 1.
AN11641
Application note
Relay schematic
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
2.2 Bipolar Junction Transistor (BJT) operation
33 Ω/2 W
T9
T10
PHTP60410PY
PMEG6030ETP
PMEG6030ETP
33 Ω/2 W
PHTP60410PY
M
33 Ω/2 W
T7
T8
PHTP60410NY
PMEG6030ETP
PMEG6030ETP
33 Ω/2 W
PHTP60410NY
aaa-017885
A PWM signal is used to control T9 / T8 or T10 / T7 to turn the motor left or right
Fig 2.
AN11641
Application note
Schematic H-bridge configuration
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
3. Parameters of NXP high-power bipolar transistors (PHPT series)
Due to the maximum motor current of 8 A, the voltage across collector and emitter must
be aligned with the power dissipation of the LFPAK56 package.
Figure 3 shows a typical value for VCEsat of PHPT60410NY.
aaa-014219
1
VCEsat
(V)
10-1
(1)
(2)
10-2
(3)
(4)
10-3
10-1
1
10
102
103
104
IC (mA)
Tamb = 25 C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 20
(4) IC/IB = 10
Fig 3.
PHPT60410NY: Collector-emitter saturation voltage as a function of collector
current; typical values
At hFE = 50 (base current IB = 160 mA) and at maximum motor current (ICmax), a 300 mV
voltage drop across collector and emitter must be expected. The outcome of this is
Ptot = 2.4 W in continuous mode.
For this application note, following PWM parameters have been chosen:
• PWM frequency = 125 Hz / tp = 8 ms
• Duty cycle = 0.5
AN11641
Application note
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Rev. 1 — 21 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
Figure 4 shows the thermal impedance of a PHPT60410NY under these conditions.
aaa-014225
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.5
0.2
10
0.1
0.05
0.02
0.01
1
0.25
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig 4.
PHPT60410NY: Transient impedance from junction to ambient as a function of pulse duration; typical
values
Given that:
T j  max  – T amb
P tot = ---------------------------------R th  j – a 
(1)
then, at Tj(max) = 175 C, if Zth(j-a) = 50 K/W, then Ptot = 3 W at Tamb = 25 C or Ptot = 2.4 W
at Tamb = 55 C on standard footprint.
AN11641
Application note
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
4. Demoboard
In order to verify all theoretical approaches, NXP designed a test board with a
PWM-driven H-bridge and for comparison tow relays to drive a brushed DC motor. Each
tactile switch turns the motor left or right. The relay part is isolated from the PWM stage.
aaa-017886
Fig 5.
Test board with a PMW-driven H-bridge
4.1 Electrical verification
aaa-017887
Fig 6.
PWM signal
PWM control signal is running with a frequency of 130 Hz and a duty cycle  of 0.5.
AN11641
Application note
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
The PWM is generated by a simple NE555 circuit. At a jumper, the signal can be
disconnected from the tactile switches. That is why the frequency decreases to 125 Hz
during motor operation.
aaa-017888
Fig 7.
Signal at base resistor of high-side PNP
In peak, the base current IB can be calculated with voltage V = 10 V and resistance
R = 33 . The outcome of this is IB = 300 mA or IB = 150 mA in average.
aaa-017889
Fig 8.
Signal at base resistor of low-side NPN
In peak, the current is 288 mA, in average 144 mA.
In real application, the transistors are running at a slightly higher hFE. The base resistor
and workpoint were calculated with respect to high blocking current of 8 A. In normal
application, the motor current is measured by a microcontroller in order to stop the turning
of the motor on security reason. The following scope trace (Figure 9) was measured
across a resistor of 235 m and shows following motor current:
AN11641
Application note
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
aaa-017890
Fig 9.
Motor current
In peaks, the motor current is 4.25 A. In average, the motor is running with 2.125 A. From
this, hFE = 15 in normal operation mode.
4.2 Thermal results
All measurements were performed with a motor in normal operation mode.
aaa-017893
aaa-017892
Fig 10. High-side PNP transistor: collector pad
temperature (cursor) approximately 37 C
AN11641
Application note
Fig 11. Low-side NPN transistor: collector pad
temperature (cursor) approximately 36 C
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
4.3 EMI results
Used equipment to measure the ElectroMagnetic Interference (EMI) performance of the
H-bridge with PHPT-series (VCE = 40 V, IC = 10 A) versus a standard automotive relay
(12 V; 50 mA coil current, 15 A max):
•
•
•
•
•
Power supply: WIMO GSV3000
Artificial network: Schwarzbeck NNBM 8125
LFPAK demoboard
DC Motor: Bosch AHC 12V
EMI test receiver: Rohde & Schwarz ESCI3
4.3.1 Board-powered no-switch
aaa-017894
110
Level
(dBμV)
70
30
-10
10-1
1
10
f (MHz)
102
Fig 12. Powered Device Under Test (DUT) (no action)
AN11641
Application note
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Rev. 1 — 21 May 2015
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AN11641
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Relay replacement by NXP high-power bipolar transistors in LFPAK56
4.3.2 Relay operated
aaa-017895
110
Level
(dBμV)
70
30
-10
10-1
1
10
f (MHz)
102
Maximum at 32 MHz = 55 dBV
Fig 13. Powered DUT (relay)
4.3.3 H-bridge operated
aaa-017896
110
Level
(dBμV)
70
30
-10
10-1
1
10
f (MHz)
102
Maximum at 16.5 MHz = 49 dBV
Fig 14. Powered DUT (BJT)
AN11641
Application note
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Rev. 1 — 21 May 2015
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NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
4.3.4 H-bridge operated in PWM Mode
aaa-018296
110
Level
(dBμV)
70
30
-10
10-1
1
10
f (MHz)
102
Maximum at 366 kHz = 59 dBV
Fig 15. Powered DUT (PWM)
5. Results
If all necessary parameters are taken into account, relays can be replaced by bipolar
transistors, like NXP’s PHPT-series in LFPAK.
The advantages of a silicon-based solution compare to relay are:
•
•
•
•
AN11641
Application note
Reliable performance over lifetime (AEC-Q101)
Significantly better EMI performance
No contact bouncing
Less board space
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Rev. 1 — 21 May 2015
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AN11641
NXP Semiconductors
Relay replacement by NXP high-power bipolar transistors in LFPAK56
6. Product portfolio in LFPAK
Table 1.
NXP’s product portfolio in LFPAK
Type number
Configuration
VCEO
IC
AEC-Q101
PHPT60406NY
NPN
40 V
6A
YES
PHPT60406PY
PNP
40 V
6A
YES
PHPT60410NY
NPN
40 V
10 A
YES
PHPT60410PY
PNP
40 V
10 A
YES
PHPT60603NY
NPN
60 V
3A
YES
PHPT60603PY
PNP
60 V
3A
YES
PHPT60606NY
NPN
60 V
6A
YES
PHPT60606PY
PNP
60 V
6A
YES
PHPT60610NY
NPN
60 V
10 A
YES
PHPT60610PY
PNP
60 V
10 A
YES
PHPT61002NYC
NPN
100 V
2A
NO
PHPT61002PYC
PNP
100 V
2A
NO
PHPT61003NY
NPN
100 V
3A
YES
PHPT61003PY
PNP
100 V
3A
YES
PHPT61006NY
NPN
100 V
6A
YES
PHPT61006PY
PNP
100 V
6A
YES
PHPT61010NY
NPN
100 V
10 A
YES
PHPT61010PY
PNP
100 V
10 A
YES
7. Sources
• NXP Semiconductors - PHPT60410PY Product data sheet Rev. 1 - 21 January 2015
• NXP Semiconductors - PHPT60410NY Product data sheet Rev. 1 - 21 January 2015
AN11641
Application note
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Rev. 1 — 21 May 2015
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Relay replacement by NXP high-power bipolar transistors in LFPAK56
8. Legal information
8.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
8.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
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punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
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applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN11641
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
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Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
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and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
8.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
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Relay replacement by NXP high-power bipolar transistors in LFPAK56
9. Contents
1
1.1
2
2.1
2.2
3
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
5
6
7
8
8.1
8.2
8.3
9
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features and benefits . . . . . . . . . . . . . . . . . . . . 3
Brushed DC motor control . . . . . . . . . . . . . . . . 4
Relay operation . . . . . . . . . . . . . . . . . . . . . . . . 4
Bipolar Junction Transistor (BJT) operation . . . 5
Parameters of NXP high-power bipolar
transistors (PHPT series) . . . . . . . . . . . . . . . . . 6
Demoboard . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical verification . . . . . . . . . . . . . . . . . . . . . 8
Thermal results . . . . . . . . . . . . . . . . . . . . . . . . 10
EMI results . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Board-powered no-switch . . . . . . . . . . . . . . . . 11
Relay operated . . . . . . . . . . . . . . . . . . . . . . . . 12
H-bridge operated. . . . . . . . . . . . . . . . . . . . . . 12
H-bridge operated in PWM Mode . . . . . . . . . . 13
Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Product portfolio in LFPAK . . . . . . . . . . . . . . . 14
Sources. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 May 2015
Document identifier: AN11641