CC1120
High Performance RF Transceiver for Narrowband Systems
Applications
Narrowband ultra low power wireless systems with
channel spacing down to 12.5 kHz
170/315/433/868/915/920/950 MHz ISM/SRD band
Wireless Metering and Wireless Smart Grid (AMR and
AMI)
IEEE 802.15.4g systems
Home and building automation
Wireless alarm and security systems
Industrial monitoring and control
Wireless healthcare applications
Wireless sensor networks and Active RFID
Private mobile radio
Regulations
Suitable for systems targeting compliance with:
Europe
US
Japan
ETSI EN 300 220
ETSI EN 54-25
FCC CFR47 Part 15
FCC CFR47 Part 90, 24 and 101
ARIB RCR STD-T30
ARIB STD-T67
ARIB STD-T108
Key Features
High performance single chip transceiver
o Adjacent channel selectivity: 64 dB at 12.5 kHz
offset
o Blocking performance: 91 dB at 10 MHz offset
o Excellent receiver sensitivity:
-123 dBm at 1.2 kbps
-110 dBm at 50 kbps
-127 dBm using built-in coding gain
o Very low phase noise: -111 dBc/Hz at 10 kHz
offset
Suitable for systems targeting ETSI category 1
compliance in 169 MHz and 433 MHz bands
High spectral efficiency (9.6 kbps in 12.5 kHz channel
in compliance with FCC narrowbanding mandate)
Power Supply
o Wide supply voltage range (2.0 V – 3.6 V)
o Low current consumption:
- RX: 2 mA in RX Sniff Mode
- RX: 17 mA peak current in low power mode
- RX: 22 mA peak current in high
performance mode
- TX: 45 mA at +14 dBm
o Power down: 0.3 μA
Programmable output power up to +16 dBm with
0.4 dB step size
Automatic output power ramping
Configurable data rates: 0 to 200 kbps
Supported modulation formats: 2-FSK, 2- GFSK,
4-FSK, 4-GFSK, MSK, OOK
WaveMatch: Advanced digital signal processing for
improved sync detect performance
RoHS compliant 5x5mm QFN 32 package
Peripherals and Support Functions
Enhanced Wake-On-Radio functionality for automatic
low-power receive polling
Separate 128-byte RX and TX FIFOs
Includes functions for antenna diversity support
Support for re-transmissions
Support for auto-acknowledge of received packets
TCXO support and control, also in power modes
Automatic Clear Channel Assessment (CCA) for listenbefore-talk (LBT) systems
Built in coding gain support for increased range and
robustness
Digital RSSI measurement
Support for seamless integration with the CC1190 for
increased range giving up to 3 dB improvement in
sensitivity and up to +27 dBm output power
Temperature sensor
25 AVDD_PFD_CHP
27 AVDD_SYNTH2
26 DCPL_PFD_CHP
DCPL_XOSC
28 AVDD_XOSC
29
XOSC_Q2
30 XOSC_Q1
31
The CC1120 is a fully integrated single-chip radio
transceiver designed for high performance at very low
power and low voltage operation in cost effective wireless
systems. All filters are integrated, removing the need for
costly external SAW and IF filters. The device is mainly
intended for the ISM (Industrial, Scientific and Medical)
and SRD (Short Range Device) frequency bands at 164192 MHz, 274-320 MHz, 410-480 MHz and 820-960 MHz.
32 EXT_XOSC
Description
VDD_GUARD
1
24
RESET_N
2
23
LPF0
GPIO3
3
22
AVDD_SYNTH1
21
DCPL_VCO
20
LNA_N
GPIO2
4
DVDD
5
DCPL
6
SI
7
SCLK
8
CC1120
19 LNA_P
GND
GROUND PAD
13
14
15
16
AVDD_IF
RBIAS
AVDD_RF
N.C.
CSn
DVDD
GPIO0
12
SO (GPIO1)
11
9
10
The CC1120 provides extensive hardware support for
packet handling, data buffering, burst transmissions, clear
channel assessment, link quality indication and Wake-OnRadio. The CC1120 main operating parameters can be
controlled via an SPI interface. In a typical system, the
CC1120 will be used together with a microcontroller and
only few external passive components.
LPF1
18
TRX_SW
17
PA
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 1 of 24
CC1120
Table of Contents
1
ELECTRICAL SPECIFICATIONS .................................................................................................... 3
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1.10
1.11
1.12
1.13
1.14
1.15
1.16
1.17
ABSOLUTE MAX RATINGS ................................................................................................................ 3
GENERAL CHARACTERISTICS ............................................................................................................ 3
RF CHARACTERISTICS ...................................................................................................................... 3
REGULATORY STANDARDS ............................................................................................................... 4
CURRENT CONSUMPTION, STATIC MODES ........................................................................................ 5
CURRENT CONSUMPTION, TRANSMIT MODES ................................................................................... 5
CURRENT CONSUMPTION, RECEIVE MODES...................................................................................... 6
RECEIVE PARAMETERS ..................................................................................................................... 6
TRANSMIT PARAMETERS................................................................................................................. 12
PLL PARAMETERS .......................................................................................................................... 13
WAKE-UP AND TIMING ................................................................................................................... 14
32 MHZ CRYSTAL OSCILLATOR...................................................................................................... 14
32 MHZ CLOCK INPUT (TCXO) ...................................................................................................... 14
32 KHZ CLOCK INPUT ..................................................................................................................... 15
32 KHZ RC OSCILLATOR ................................................................................................................ 15
I/O AND RESET................................................................................................................................ 15
TEMPERATURE SENSOR................................................................................................................... 15
2
TYPICAL PERFORMANCE CURVES ............................................................................................ 16
3
PIN CONFIGURATION ..................................................................................................................... 19
4
BLOCK DIAGRAM ............................................................................................................................ 20
4.1
4.2
4.3
4.4
4.5
4.6
4.7
FREQUENCY SYNTHESIZER ............................................................................................................. 20
RECEIVER ....................................................................................................................................... 20
TRANSMITTER ................................................................................................................................. 21
RADIO CONTROL AND USER INTERFACE ......................................................................................... 21
ENHANCED WAKE-ON-RADIO (EWOR) ......................................................................................... 21
SNIFF MODE.................................................................................................................................... 21
ANTENNA DIVERSITY ..................................................................................................................... 22
5
TYPICAL APPLICATION CIRCUIT ............................................................................................... 23
6
HISTORY ............................................................................................................................................. 24
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 2 of 24
CC1120
1
Electrical Specifications
All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470
rev.1.0.1 or CC1120EM_169 rev.1.2
1.1
Absolute Max Ratings
Parameter
Min
Typ
Max
Unit
Condition
Supply Voltage ("VDD")
-0.3
3.9
V
Storage Temperature Range
-40
125
°C
ESD
2000
V
HBM
ESD
500
V
CDM
Input RF level
+10
dBm
VDD+0.3
Voltage on Any Digital Pin
-0.3
V
max 3.9
Voltage on Analog Pins (including
“DCPL” pins)
1.2
-0.3
2.0
V
Max
Unit
General Characteristics
Parameter
Min
Typ
Voltage Supply Range
2.0
3.6
V
Temperature Range
-40
85
°C
1.3
Condition
RF Characteristics
Parameter
Min
Typ
Max
Unit
820
960
MHz
410
480
MHz
274
320
MHz
164
192
MHz
Frequency Bands
Frequency Resolution
Condition
Please see application note AN115
“Using the CC112x/CC1175 at 274
to 320 MHz” for more information
30
Hz
In 820-960 MHz band
15
Hz
In 410-480 MHz band
6
Hz
In 164-192 MHz band
0
200
kbps
Packet mode
0
100
kbps
Transparent mode
Datarate
Datarate Step Size
1e-4
bps
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 3 of 24
CC1120
1.4
Regulatory Standards
Performance Mode
Frequency Band
Suitable for compliance with
Comments
ARIB T-96
ARIB T-108
ETSI EN 300 220 category 2
ETSI EN 54-25
820 – 960 MHz
FCC PART 101
FCC PART 24 SUBMASK D
Performance also suitable for systems
targeting maximum allowed output
power in the respective bands, using a
range extender such as the CC1190
FCC PART 15.247
FCC PART 15.249
FCC PART 90 MASK G
High Performance
Mode
FCC PART 90 MASK J
ARIB T-67
ARIB RCR STD-30
410 – 480 MHz
ETSI EN 300 220 category 1
FCC PART 90 MASK D
Performance also suitable for systems
targeting maximum allowed output
power in the respective bands, using a
range extender
FCC PART 90 MASK G
164 – 192 MHz
ETSI EN 300 220 category 1
FCC PART 90 MASK D
Performance also suitable for systems
targeting maximum allowed output
power in the respective bands, using a
range extender
ETSI EN 300 220 category 2
820 – 960 MHz
FCC PART 15.247
FCC PART 15.249
Low Power Mode
410 – 480 MHz
ETSI EN 300 220 category 2
164 – 192 MHz
ETSI EN 300 220 category 2
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 4 of 24
CC1120
1.5
Current Consumption, Static Modes
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
0.3
1
Unit
Condition
µA
Power Down with Retention
0.5
µA
Low-power RC oscillator running
XOFF Mode
170
µA
Crystal oscillator / TCXO disabled
IDLE Mode
1.3
mA
Clock running, system waiting with
no radio activity
Unit
Condition
1.6
Current Consumption, Transmit Modes
950 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
TX Current Consumption +10 dBm
37
mA
TX Current Consumption 0 dBm
26
mA
868/915/920 MHz bands (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
TX Current Consumption +14 dBm
45
mA
TX Current Consumption +10 dBm
34
mA
Condition
434 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
TX Current Consumption +15 dBm
50
mA
TX Current Consumption +14 dBm
45
mA
TX Current Consumption +10 dBm
34
mA
Condition
170 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
TX Current Consumption +15 dBm
54
mA
TX Current Consumption +14 dBm
49
mA
TX Current Consumption +10 dBm
41
mA
Condition
Low Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
TX Current Consumption +10 dBm
Typ
32
Max
Unit
Condition
mA
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 5 of 24
CC1120
1.7
Current Consumption, Receive Modes
High Performance Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Typ
Max
Unit
Condition
Using RX Sniff Mode, where the
receiver wakes up at regular
intervals to look for an incoming
packet
RX Wait for Sync
1.2 kbps, 4 Byte Preamble
2
mA
38.4kbps, 4 Byte Preamble
13.4
mA
433, 868/915/920 and 950 MHz bands
22
mA
170 MHz band
23
mA
15
uA
50 kbps, 5 byte preamble, 32 kHz
RC oscillator used as sleep timer
Unit
Condition
mA
Peak current consumption during
packet reception at the sensitivity
level
Unit
Condition
RX Peak Current
Peak current consumption during
packet reception at the sensitivity
threshold
Average Current Consumption
Check for Data Packet Every 1 Second
Using Wake on Radio
Low Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Typ
Max
RX Peak Current Low power RX mode
1.2 kbps
1.8
17
Receive Parameters
1
General Receive Parameters (High Performance Mode)
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Saturation
Typ
Max
+10
Digital Channel Filter Programmable
Bandwidth
8
dBm
200
kHz
IIP3, Normal Mode
-14
dBm
At maximum gain
IIP3, High Linearity Mode
-8
dBm
Using 6 dB gain reduction in front
end
±12
%
With carrier sense detection enabled
and assuming 4 byte preamble
±0.2
%
-56
dBm
< -57
dBm
Datarate Offset Tolerance
Spurious Emissions
1 - 13 GHz (VCO leakage at 3.5 GHz)
30 MHz to 1 GHz
With carrier sense detection disabled
Radiated emissions measured
according to ETSI EN 300 220, fc =
869.5 MHz
Optimum Source Impedance
868 / 915 / 920 MHz bands
433 MHz band
169 MHz band
1
60 + j60 / 30+j30
100 + j60 / 50+ j30
140 + j40 / 70 + j20
Ω
Ω
Ω
(Differential / Single Ended RX
Configurations)
All RX measurements made at the antenna connector, to a bit error rate limit of 1%
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 6 of 24
CC1120
RX performance in 950 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Unit
Condition
-120
dBm
1.2 kbps, DEV=4 kHz CHF=10 kHz2
-114
dBm
1.2 kbps, DEV=20 kHz CHF=50 kHz
-107
dBm
50 kbps 2GFSK, DEV=25 kHz,
CHF=100 kHz
-100
dBm
200 kbps, DEV=83 kHz (outer
symbols), CHF=200 kHz, 4GFSK3
51
dB
± 12.5 kHz (adjacent channel)
Blocking and Selectivity
52
dB
± 25 kHz (alternate channel)
1.2 kbps 2FSK, 12.5 kHz channel
separation, 4 kHz deviation, 10 kHz
channel filter
73
dB
± 1 MHz
76
dB
± 2 MHz
81
dB
± 10 MHz
Sensitivity
Note: Sensitivity can be improved if the
TX and RX matching networks are
separated.
Typ
Max
47
dB
± 50 kHz (adjacent channel)
Blocking and Selectivity
48
dB
+ 100 kHz (alternate channel)
1.2 kbps 2FSK, 50 kHz channel
separation, 20 kHz deviation, 50 kHz
channel filter
69
dB
± 1 MHz
71
dB
± 2 MHz
78
dB
± 10 MHz
Blocking and Selectivity
43
dB
± 200 kHz (adjacent channel)
50 kbps 2GFSK, 200 kHz channel
separation, 25 kHz deviation, 100 kHz
channel filter
51
dB
± 400 kHz (alternate channel)
62
dB
± 1 MHz
65
dB
± 2 MHz
71
dB
± 10 MHz
37
dB
± 200 kHz (adjacent channel)
Blocking and Selectivity
44
dB
± 400 kHz (alternate channel)
200 kbps 4GFSK, 83 kHz deviation (outer
symbols), 200 kHz channel filter, zero IF
55
dB
± 1 MHz
58
dB
± 2 MHz
64
dB
± 10 MHz
(Same modulation format as 802.15.4g
Mandatory Mode)
2
DEV is short for deviation, CHF is short for Channel Filter Bandwidth
3
BT=0.5 is used in all GFSK measurements
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 7 of 24
CC1120
RX performance in 868/915/920 MHz bands (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Unit
Condition
-127
dBm
300 bps with coding gain (using a
PN spreading sequence with 4 chips
per databit)
DEV=4 kHz CHF=10 kHz
-123
dBm
1.2 kbps, DEV=4 kHz CHF=10 kHz
-120
dBm
1.2 kbps, DEV=10 kHz CHF=42 kHz
-117
dBm
1.2 kbps, DEV=20 kHz CHF=50 kHz
-114
dBm
4.8 kbps OOK
-110
dBm
38.4 kbps, DEV=20 kHz CHF=100
kHz
-110
dBm
50 kbps 2GFSK, DEV=25 kHz,
CHF=100 kHz
-103
dBm
200 kbps, DEV=83 kHz (outer
symbols), CHF=200 kHz, 4GFSK
54
dB
± 12.5 kHz (adjacent channel)
Blocking and Selectivity
54
dB
± 25 kHz (alternate channel)
1.2 kbps 2FSK, 12.5 kHz channel
separation, 4 kHz deviation, 10 kHz
channel filter
75
dB
± 1 MHz
79
dB
± 2 MHz
87
dB
± 10 MHz
Blocking
78
dB
± 1 MHz
1.2 kbps 2FSK, 12.5 kHz channel
separation, using settings optimized for
blocking performance
(3 kHz deviation, 7.8 kHz channel filter,
minimum loop bandwidth)
82
dB
± 2 MHz
88
dB
± 8 MHz
88
dB
± 10 MHz
48
dB
± 50 kHz (adjacent channel)
Blocking and Selectivity
48
dB
+ 100 kHz (alternate channel)
1.2 kbps 2FSK, 50 kHz channel
separation, 20 kHz deviation, 50 kHz
channel filter
69
dB
± 1 MHz
74
dB
± 2 MHz
81
dB
± 10 MHz
Sensitivity
Typ
Max
42
dB
+ 100 kHz (adjacent channel)
Blocking and Selectivity
43
dB
± 200 kHz (alternate channel)
38.4 kbps 2GFSK, 100 kHz channel
separation, 20 kHz deviation, 100 kHz
channel filter
62
dB
± 1 MHz
66
dB
± 2 MHz
74
dB
± 10 MHz
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 8 of 24
CC1120
RX performance in 868/915/920 MHz bands (continued from previous page)
Parameter
Min
Unit
Condition
Blocking and Selectivity
43
dB
± 200 kHz (adjacent channel)
50 kbps 2GFSK, 200 kHz channel
separation, 25 kHz deviation, 100 kHz
channel filter
50
dB
± 400 kHz (alternate channel)
61
dB
± 1 MHz
65
dB
± 2 MHz
74
dB
± 10 MHz
36
dB
± 200 kHz (adjacent channel)
Blocking and Selectivity
44
dB
± 400 kHz (alternate channel)
200 kbps 4GFSK, 83 kHz deviation (outer
symbols), 200 kHz channel filter, zero IF
55
dB
± 1 MHz
59
dB
± 2 MHz
67
dB
± 10 MHz
54
dB
1.2 kbps, DEV=4 kHz CHF=10 kHz,
image at -125 kHz
(Same modulation format as 802.15.4g
Mandatory Mode)
Typ
Max
Image Rejection
(Image compensation enabled)
RX performance in 434 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Unit
Condition
-123
dBm
1.2 kbps, DEV=4 kHz CHF=10 kHz
-109
dBm
50 kbps 2GFSK, DEV=25 kHz,
CHF=100 kHz
-116
dBm
1.2 kbps, DEV=20 kHz CHF=50 kHz
60
dB
± 12.5 kHz (adjacent channel)
Blocking and Selectivity
60
dB
± 25 kHz (alternate channel)
1.2 kbps 2FSK, 12.5 kHz channel
separation, 4 kHz deviation, 10 kHz
channel filter
79
dB
± 1 MHz
82
dB
± 2 MHz
91
dB
± 10 MHz
Sensitivity
Typ
Max
54
dB
± 50 kHz (adjacent channel)
Blocking and Selectivity
54
dB
+ 100 kHz (alternate channel)
1.2 kbps 2FSK, 50 kHz channel
separation, 20 kHz deviation, 50 kHz
channel filter
74
dB
± 1 MHz
78
dB
± 2 MHz
86
dB
± 10 MHz
47
dB
+ 100 kHz (adjacent channel)
Blocking and Selectivity
50
dB
± 200 kHz (alternate channel)
38.4 kbps 2GFSK, 100 kHz channel
separation, 20 kHz deviation, 100 kHz
channel filter
67
dB
± 1 MHz
71
dB
± 2 MHz
78
dB
± 10 MHz
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 9 of 24
CC1120
RX performance in 170 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
Condition
-123
dBm
1.2 kbps, DEV=4 kHz CHF=10 kHz
-117
dbm
1.2 kbps, DEV=20 kHz CHF=50 kHz
64
dB
± 12.5 kHz (adjacent channel)
Blocking and Selectivity
66
dB
± 25 kHz (alternate channel)
1.2 kbps 2FSK, 12.5 kHz channel
separation, 4 kHz deviation, 10 kHz
channel filter
82
dB
± 1 MHz
83
dB
± 2 MHz
89
dB
± 10 MHz
Sensitivity
60
dB
± 50 kHz (adjacent channel)
Blocking and Selectivity
60
dB
+ 100 kHz (alternate channel)
1.2 kbps 2FSK, 50 kHz channel
separation, 20 kHz deviation, 50 kHz
channel filter
76
dB
± 1 MHz
77
dB
± 2 MHz
83
dB
± 10 MHz
70
dB
66
dB
Spurious Response Rejection
1.2 kbps 2FSK, 12.5 kHz channel
separation, 4 kHz deviation, 10 kHz
channel filter
Image Rejection
(Image compensation enabled)
1.2 kbps, DEV=4 kHz CHF=10 kHz,
image at -125 kHz
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 10 of 24
CC1120
RX performance in Low Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Sensitivity
Typ
Max
Unit
Condition
-111
dBm
1.2 kbps, DEV=4 kHz CHF=10 kHz
-99
dBm
38.4 kbps, DEV=50 kHz CHF=100
kHz
-99
dBm
50 kbps 2GFSK, DEV=25 kHz,
CHF=100 kHz
46
dB
± 12.5 kHz (adjacent channel)
Blocking and Selectivity
46
dB
± 25 kHz (alternate channel)
1.2 kbps 2FSK, 12.5 kHz channel
separation, 4 kHz deviation, 10 kHz
channel filter
73
dB
± 1 MHz
78
dB
± 2 MHz
79
dB
± 10 MHz
43
dB
± 50 kHz (adjacent channel)
Blocking and Selectivity
45
dB
+ 100 kHz (alternate channel)
1.2 kbps 2FSK, 50 kHz channel
separation, 20 kHz deviation, 50 kHz
channel filter
71
dB
± 1 MHz
74
dB
± 2 MHz
75
dB
± 10 MHz
37
dB
+ 100 kHz (adjacent channel)
43
dB
+ 200 kHz (alternate channel)
58
dB
± 1 MHz
62
dB
± 2 MHz
64
dB
+ 10 MHz
Blocking and Selectivity
43
dB
+ 200 kHz (adjacent channel)
50 kbps 2GFSK, 200 kHz channel
separation, 25 kHz deviation, 100 kHz
channel filter
52
dB
+ 400 kHz (alternate channel)
60
dB
± 1 MHz
64
dB
± 2 MHz
65
dB
± 10 MHz
+10
dBm
Blocking and Selectivity
38.4 kbps 2GFSK, 100 kHz channel
separation, 20 kHz deviation, 100 kHz
channel filter
(Same modulation format as 802.15.4g
Mandatory Mode)
Saturation
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 11 of 24
CC1120
1.9
Transmit Parameters
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Max Output Power
Typ
Max
Unit
Condition
+12
dBm
At 950 MHz
+14
dBm
At 915/920 MHz
+15
dBm
At 915/920 MHz with VDD = 3.6 V
+15
dBm
At 868 MHz
+16
dBm
At 868 MHz with VDD = 3.6 V
+15
dBm
At 433 MHz
+16
dBm
At 433 MHz with VDD = 3.6 V
+15
dBm
At 170 MHz
+16
dBm
At 170 MHz with VDD = 3.6 V
-11
dBm
Within fine step size range
-40
dBm
Within coarse step size range
0.4
dB
Within fine step size range
-75
dBc
4-GFSK 9.6 kbps in 12.5 kHz
channel, measured in 100 Hz
bandwidth at 434 MHz (FCC Part 90
Mask D compliant)
-58
dBc
4-GFSK 9.6 kbps in 12.5 kHz
channel, measured in 8.75 kHz
bandwidth (ETSI 300 220 compliant)
-61
dBc
2-GFSK 2.4 kbps in 12.5 kHz
channel, 1.2 kHz deviation
< -60
dBm
Min Output Power
Output Power Step Size
Adjacent Channel Power
Spurious Emissions
(Not including harmonics)
Harmonics
2nd Harm, 170 MHz
3rd Harm, 170 MHz
2nd Harm, 433 MHz
3rd Harm, 433 MHz
2nd Harm, 450 MHz
3rd Harm, 450 MHz
2nd Harm, 868 MHz
3rd Harm, 868 MHz
2nd Harm, 915 MHz
3rd Harm, 915 MHz
4th Harm, 915 MHz
2nd Harm, 950 MHz
3rd Harm, 950 MHz
-39
-58
-56
-51
-60
-45
-40
-42
56
52
60
-58
-42
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBuV/m
dBuV/m
dBuV/m
dBm
dBm
Transmission at +14 dBm (or
maximum allowed in applicable band
where this is less than +14 dBm)
using TI reference design
Emissions measured according to
ARIB T-96 in 950 MHz band, ETSI
EN 300-220 in 170, 433 and 868
MHz bands and FCC part 15.247 in
450 and 915 MHz band
Fourth harmonic in 915 MHz band
will require extra filtering to meet
FCC requirements if transmitting for
long intervals (>50 ms periods)
Optimum Load Impedance
868 / 915 / 920 MHz bands
433 MHz band
169 MHz band
35 + j35
55 + j25
80 + j0
Ω
Ω
Ω
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 12 of 24
CC1120
1.10 PLL Parameters
High Performance Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Phase Noise in 950 MHz Band
Phase Noise in 868/915/920 MHz Bands
Phase Noise in 433 MHz Band
Phase Noise in 170 MHz Band
Typ
Max
Unit
Condition
-99
dBc/Hz
± 10 kHz offset
-99
dBc/Hz
± 100 kHz offset
-123
dBc/Hz
± 1 MHz offset
-99
dBc/Hz
± 10 kHz offset
-100
dBc/Hz
± 100 kHz offset
-122
dBc/Hz
± 1 MHz offset
-106
dBc/Hz
± 10 kHz offset
-107
dBc/Hz
± 100 kHz offset
-127
dBc/Hz
± 1 MHz offset
-111
dBc/Hz
± 10 kHz offset
-116
dBc/Hz
± 100 kHz offset
-135
dBc/Hz
± 1 MHz offset
Unit
Condition
-90
dBc/Hz
± 10 kHz offset
-92
dBc/Hz
± 100 kHz offset
-124
dBc/Hz
± 1 MHz offset
-95
dBc/Hz
± 10 kHz offset
Low Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Phase Noise in 950 MHz Band
Phase Noise in 868/915/920 MHz Bands
Phase Noise in 433 MHz Band
Phase Noise in 170 MHz Band
Typ
Max
-95
dBc/Hz
± 100 kHz offset
-124
dBc/Hz
± 1 MHz offset
-98
dBc/Hz
± 10 kHz offset
-102
dBc/Hz
± 100 kHz offset
-129
dBc/Hz
± 1 MHz offset
-106
dBc/Hz
± 10 kHz offset
-110
dBc/Hz
± 100 kHz offset
-136
dBc/Hz
± 1 MHz offset
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 13 of 24
CC1120
1.11 Wake-up and Timing
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Powerdown to IDLE
Typ
Max
Unit
Condition
0.4
ms
Depends on crystal
166
µs
Calibration disabled
461
µs
Calibration enabled
50
µs
296
µs
Calibrate when leaving RX/TX
enabled
0
µs
Calibrate when leaving RX/TX
disabled
0.4
ms
When using SCAL strobe
IDLE to RX/TX
RX/TX Turnaround
RX/TX to IDLE time
Frequency Synthesizer Calibration
Minimum Required Number of Preamble
Bytes
0.5
bytes
Required for RF front end gain
settling only. Digital demodulation
does not require preamble for
settling
Time From Start RX Until Valid RSSI
4.6
ms
12.5 kHz channels
Including gain settling (function of channel
bandwidth. Programmable for trade-off
between speed and accuracy)
0.3
ms
200 kHz channels
Unit
Condition
MHz
Note: It is recommended that the
crystal frequency is chosen so that
the RF channel(s) are >1 MHz away
from multiples of XOSC in TX and
XOSC/2 in RX
1.12 32 MHz Crystal Oscillator
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Crystal Frequency
Typ
32
Load Capacitance (CL)
Max
33.6
10
ESR
pF
Ω
Simulated over operating conditions
ms
Depends on crystal
Max
Unit
Condition
60
Start-up Time
0.4
1.13 32 MHz Clock Input (TCXO)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Clock Frequency
32
33.6
MHz
Clock input amplitude (peak-to-peak)
0.8
VDD
V
Simulated over operating conditions
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 14 of 24
CC1120
1.14 32 kHz Clock Input
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Clock Frequency
Max
Unit
32
32 kHz Clock Input Pin Input High Voltage
Condition
kHz
0.8×VDD
V
32 kHz Clock Input Pin Input Low Voltage
0.2×VDD
V
1.15 32 kHz RC Oscillator
TA = 25°C, VDD = 3.0 V if nothing else stated.
Parameter
Min
Frequency
Typ
Max
32
Unit
Condition
kHz
After Calibration
Relative to frequency reference (i.e.
32 MHz crystal or TCXO)
Frequency Accuracy After Calibration
±0.1
%
Initial Calibration Time
1.6
ms
1.16 I/O and Reset
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Logic Input High Voltage
0.8×VDD
Typ
Unit
Condition
V
Logic Input Low Voltage
Logic Output High Voltage
Max
0.2×VDD
0.8×VDD
V
V
At 4 mA output load or less
Logic Output Low Voltage
0.2×VDD
Power-on Reset Threshold
1.3
V
V
Voltage on DVDD pin
1.17 Temperature Sensor
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Temperature Sensor Range
-40
Typ
Max
85
Unit
Condition
°C
Temperature Coefficient
2.66
mV / °C
Change in sensor output voltage vs
change in temperature
Typical Output Voltage
794
mV
Typical sensor output voltage at
TA = 25°C, VDD = 3.0 V
VDD Coefficient
1.17
mV / V
Change in sensor output voltage vs
change in VDD
The CC1120 can be configured to provide a voltage proportional to temperature on GPIO1. Using
the information above, the temperature can be estimated by measuring this voltage. Please refer
to the CC1120 user guide for more information.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 15 of 24
CC1120
2
Typical Performance Curves
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470
rev.1.0.1 or CC1120EM_169 rev.1.2
Note that the "output power vs load impedance" plot was measured at the 50 Ω antenna connector
Sensitivity vs Temperature
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
Sensitivity vs Voltage
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
-120
-121
Sensitivity (dBm)
Sensitivity (dBm)
-120
-122
-123
-124
-125
-121
-122
-123
-124
-40
0
40
80
2
2.5
Temperature (ºC)
Sync Word Sensitivity vs Sync Word Detect Threshold
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
23.2
-116
22.8
RX Current (mA)
-118
-120
-122
-124
-126
22.4
22
21.6
21.2
-128
-130
3
5
7
9
11
13
15
20.8
-130
17
-80
Sync Word Detect Threshold
Selectivity vs offset frequency (12.5kHz channels)
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
70
60
50
40
30
20
10
0
-10
-20
169.9
-30
20
Input Level (dBm)
Selectivity vs offset frequency (12.5kHz channels)
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
70
60
Selectivity (dB)
Sensitivity (dBm)
3.5
RX Current vs Input Level
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
-114
Selectivity (dB)
3
Supply Voltage (V)
50
40
30
20
10
0
169.95
170
170.05
170.1
-10
859.9
Frequency (MHz)
859.95
860
860.05
Frequency (MHz)
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 16 of 24
860.1
CC1120
RSSI vs Input Level
1.2kbps, 4kHz deviation, 10kHz ch. filter bw
Output Power vs Temperature
Max Setting, 170 MHz, 3.6V
100
17
Output Power (dBm)
80
40
20
0
-20
-40
-150
16.5
16
15.5
15
-100
-50
0
-40
0
Input Level (dBm)
Output Power vs Voltage
Max Setting, 170 MHz
80
Output Power at 868MHz
vs PA power setting
18
20
16
10
Output Power (dBm)
14
12
10
8
0
-10
-20
-30
-40
6
Supply Voltage (V)
PA power setting
TX Current at 868MHz
vs PA power setting
60
40
30
20
10
43
47
4B
53
4F
57
5B
63
5F
67
6B
73
6F
77
0
7F
7B
TX Current (mA)
50
PA power setting
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 17 of 24
43
47
4B
53
4F
57
5B
63
5F
6B
3.5
73
6F
3
77
2.5
7B
-50
2
7F
Output Power (dBm)
40
Temperature (ºC)
67
RSSI
60
CC1120
GPIO Output High Voltage vs Current Being Sourced
GPIO Output Low Voltage vs Current Being Sinked
GPIO Output Low Voltage (mV)
GPIO Output high Voltage (V)
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
0
5
10
15
20
25
30
35
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
Current (mA)
Current (mA)
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 18 of 24
30
35
CC1120
3
Pin Configuration
The CC1120 pin-out is shown in the table below.
Pin #
Pin name
Type / direction
Description
1
VDD_GUARD
Power
2.0 - 3.6 V VDD
2
RESET_N
Digital Input
Asynchronous, active-low digital reset
3
GPIO3
Digital Input/Output
General purpose IO
4
GPIO2
Digital Input/Output
General purpose IO
5
DVDD
Power
2.0 - 3.6 VDD to internal digital regulator
6
DCPL
Power
Digital regulator output to external decoupling capacitor
7
SI
Digital Input
Serial data in
8
SCLK
Digital Input
Serial data clock
9
SO(GPIO1)
Digital Input/Output
Serial data out (General purpose IO)
10
GPIO0
Digital Input/Output
General purpose IO
11
CSn
Digital Input
Active-low chip-select
12
DVDD
Power
2.0 - 3.6 V VDD
13
AVDD_IF
Power
2.0 - 3.6 V VDD
14
RBIAS
Analog
External high precision R
15
AVDD_RF
Power
2.0 - 3.6 V VDD
16
NC
17
PA
Analog
Single-ended TX output
18
TRX_SW
Analog
TX/RX switch
19
LNA_P
Analog
Differential RX input
20
LNA_N
Analog
Differential RX input
21
DCPL_VCO
Power
Pin for external decoupling of VCO supply regulator
22
AVDD_SYNTH1
Power
2.0 - 3.6 V VDD
23
LPF0
Analog
External loopfilter components
24
LPF1
Analog
External loopfilter components
25
AVDD_PFD_CHP
Power
2.0 - 3.6 V VDD
26
DCPL_PFD_CHP
Power
Pin for external decoupling of PFD and CHP regulator
27
AVDD_SYNTH2
Power
2.0 - 3.6 V VDD
28
AVDD_XOSC
Power
2.0 - 3.6 V VDD
29
DCPL_XOSC
Power
Pin for external decoupling of XOSC supply regulator
30
XOSC_Q1
Analog
Crystal oscillator pin 1 (must be grounded if a TCXO or other
external clock connected to EXT_XOSC is used)
31
XOSC_Q2
Analog
Crystal oscillator pin 2 (must be left floating if a TCXO or other
external clock connected to EXT_XOSC is used)
32
EXT_XOSC
Digital Input
Pin for external XOSC input (must be grounded if a regular
XOSC connected to XOSC_Q1 and XOSC_Q2 is used)
-
GND
Ground Pad
The ground pad must be connected to a solid ground plane
Not connected
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 19 of 24
CC1120
4
Block Diagram
A system block diagram of CC1120 is shown Figure 4.1.
CC112X
Ultra low power 32kHz
auto-calibrated RC oscillator
(optional 32kHz
clock intput)
4k byte
ROM
Power on reset
MARC
Main Radio Control Unit
Ultra low power 16 bit
MCU
SPI
Serial configuration
and data interface
CSn (chip select)
SI (serial input)
Interrupt and
IO handler
System bus
SO (serial output)
SCLK (serial clock)
eWOR
Enhanced ultra low power
Wake On Radio timer
Configuration and
status registers
Battery sensor /
temp sensor
256 byte
FIFO RAM
buffer
Packet handler
and FIFO control
(optional GPIO0-3)
RF and DSP frontend
Output power ramping and OOK / ASK modulation
I
Fully integrated Fractional-N
Frequency Synthesizer
Q
ifamp
High linearity
LNA
ifamp
LNA_N
XOSC
XOSC_Q2
90dB dynamic
range ADC
(optional bit clock)
Channel
filter
LNA_P
XOSC_Q1
Data interface with
signal chain access
Cordic
14dBm high
efficiency PA
Modulator
PA
(optional autodetected
external XOSC / TCXO)
Highly flexible FSK / OOK
demodulator
90dB dynamic
range ADC
(optional low jitter serial
data output for legacy
protocols)
AGC
Automatic Gain Control, 60dB VGA range
RSSI measurements and carrier sense detection
(optional GPIO for
antenna diversity)
Figure 4.1 : System Block Diagram
4.1
Frequency Synthesizer
At the heart of CC1120 there is a fully integrated, fractional-N, ultra high performance frequency
synthesizer. The frequency synthesizer is designed for excellent phase noise performance,
providing very high selectivity and blocking performance. The system is designed to comply with
the most stringent regulatory spectral masks at maximum transmit power.
Either a crystal can be connected to XOSC_Q1 and XOSC_Q2, or a TCXO can be connected to
the EXT_XOSC input. The oscillator generates the reference frequency for the synthesizer, as
well as clocks for the ADC and the digital part. To reduce system cost, CC1120 has high accuracy
frequency estimation and compensation registers to measure and compensate for crystal
inaccuracies, enabling the use of lower cost crystals. If a TCXO is used, the CC1120 will
automatically turn the TCXO on and off when needed to support low power modes and Wake-OnRadio operation.
4.2
Receiver
CC1120 features a highly flexible receiver. The received RF signal is amplified by the low-noise
amplifier (LNA) and down-converted in quadrature (I and Q) to the intermediate frequency (IF). At
IF, the I/Q signals are digitized by the high dynamic range ADCs.
An advanced Automatic Gain Control (AGC) unit adjusts the front end gain, and enables the
CC1120 to receive both strong and weak signals, even in the presence of strong interferers. High
attenuation channel and data filtering enable reception with strong neighbor channel interferers.
The I/Q signal is converted to a phase / magnitude signal to support both FSK and OOK
modulation schemes.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 20 of 24
CC1120
A sophisticated pattern recognition algorithm locks onto the synchronization word without need for
preamble settling bytes. Receiver settling time is therefore reduced to the settling time of the
AGC, typically 4 bits. The advanced pattern recognition also greatly reduces the problem of false
sync triggering on noise, further reducing power consumption and improving sensitivity and
reliability. The pattern recognition logic can also be used as a high performance preamble
detector to reliably detect a valid preamble in the channel.
A novel I/Q compensation algorithm removes any problem of I/Q mismatch and hence avoids time
consuming and costly I/Q / image calibration steps in production or in the field.
4.3
Transmitter
The CC1120 transmitter is based on direct synthesis of the RF frequency (in-loop modulation). To
achieve effective spectrum usage, CC1120 has extensive data filtering and shaping in TX to support
high throughput data communication in narrowband channels. The modulator also controls power
ramping to remove issues such as spectral splattering when driving external high power RF
amplifiers.
4.4
Radio Control and User Interface
The CC1120 digital control system is built around MARC (Main Radio Control) implemented using
an internal high performance 16 bit ultra low power processor. MARC handles power modes,
radio sequencing and protocol timing.
A 4-wire SPI serial interface is used for configuration and data buffer access. The digital
baseband includes support for channel configuration, packet handling, and data buffering. The
host MCU can stay in power down until a valid RF packet has been received, and then burst read
the data, greatly reducing the power consumption and computing power required from the host
MCU.
The CC1120 radio control and user interface is based on the widely used CC1101 transceiver to
enable easy SW transition between the two platforms. The command strobes and the main radio
states are the same for the two platforms.
For legacy formats CC1120 also has support for two serial modes. In synchronous serial mode
CC1120 performs bit synchronization and provides the MCU with a bit clock with associated data. In
transparent mode CC1120 outputs the digital baseband signal using a digital interpolation filter to
eliminate jitter introduced by digital filtering and demodulation.
4.5
Enhanced Wake-On-Radio (eWOR)
eWOR, using a flexible integrated sleep timer, enables automatic receiver polling with no
intervention from the MCU. The CC1120 will enter RX, listen and return to sleep if a valid RF packet
is not received. The sleep interval and duty cycle can be configured to make a trade-off between
network latency and power consumption. Incoming messages are time-stamped to simplify timer
re-synchronization.
The eWOR timer runs off an ultra low power 32 kHz RC oscillator. To improve timing accuracy,
the RC oscillator can be automatically calibrated to the RF crystal in configurable intervals.
4.6
Sniff Mode
The CC1120 supports very quick start up times, and requires very few preamble bits. Sniff Mode
uses this to dramatically reduce the current consumption while the receiver is waiting for data.
Since the CC1120 is able to wake up and settle much faster than the length of most preambles, it is
not required to be in RX continuously while waiting for a packet to arrive. Instead, the enhanced
wake-on-radio feature can be used to put the device into sleep periodically. By setting an
appropriate sleep time, the CC1120 will be able to wake up and receive the packet when it arrives
with no performance loss. This removes the need for accurate timing synchronization between
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 21 of 24
CC1120
transmitter and receiver, and allows the user to trade off current consumption between the
transmitter and receiver.
4.7
Antenna Diversity
Antenna diversity can increase performance in a multi-path environment. An external antenna
switch is required. The switch can be automatically controlled by CC1120 using one of the GPIO
pins (also support for differential output control signal typically used in RF switches).
If antenna diversity is enabled, the GPIO will alternate between states until a valid RF input signal
is detected. An optional acknowledge packet can be transmitted without changing GPIO state.
An incoming RF signal can be validated by received signal strength, by using the automatic
preamble detector, or a combination of the two. Using the preamble detector will make a more
robust system and avoid the need to set a defined signal strength threshold, as this threshold will
set the sensitivity limit of the system.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 22 of 24
CC1120
5
Typical Application Circuit
Very few external components are required for the operation of CC1120. A typical application circuit
is shown below. Note that it does not show how the board layout should be done, which will
greatly influence the RF performance of CC1120.
This section is meant as an introduction only. Note that decoupling capacitors for power pins are
not shown in the figure below.
Optional
vdd
25
AVDD_PFD_CHP
vdd
VDD_GUARD
DCPL_PFD_CHP 26
vdd
AVDD_SYNTH2 27
DCPL_XOSC 29
LPF1 24
2 RESET_N
vdd
LPF0 23
3 GPIO3
AVDD_SYNTH1 22
4 GPIO2
DCPL_VCO 21
CC1120
5 DVDD
6 DCPL
vdd
LNA_N 20
LNA_P
7 SI
19
TRX_SW 18
N.C.
16
AVDD_RF
15
vdd
vdd
13 AVDD_IF
vdd
14 RBIAS
12 DVDD
11 CSn
10 GPIO0
PA 17
9 SO (GPIO1)
8 SCLK
vdd
1
AVDD_XOSC 28
vdd
XOSC_Q1 30
EXT_XOSC 32
(optional control pin
from CC1120)
XOSC_Q2 31
32 MHz
crystal
XOSC/
TCXO
MCU connection
SPI interface and
optional gpio pins
Figure 5.1 : Typical Application Circuit
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 23 of 24
CC1120
6
History
Revision
Date
Description / Changes
SWRS112D
March 2013
Added ARIB T-108 to list of regulations
Added 1.2 kbps using 10 kHz deviation and 41.7 kHz channel filter
Added optimum source / load impedance
Added missing unit "dBm" in output power section
Added information about the temperature sensor
Clarified how the typical performance curves have been measured
Corrected wrong deviation for 38.4 kbps sensitivity (was 50 kHz, corrected to 20 kHz)
Pin CS_N renamed to CSn to comply with naming convention used in the user guide
Updated modulation format information in image rejection sections
Stated which ETSI EN 300 220 receiver category that is suitable for low power mode
Added deviation and channel filter bandwidth for 300 bps format
Added blocking data using settings optimized for best blocking performance at
868/915/920 MHz
Clarified under max ratings that I/O voltages should not exceed device supply voltage by
more than 0.3 V
Various minor spelling errors corrected
SWRS112C
April 2012
Added ground pad on page 1 pin-out and pin description
Added TCXO clock input voltage requirement
Changed all pin names in pin description and figures to UPPERCASE
Changed "PA OUT" to "PA" in block diagram
Corrected deviation on 38.4kbps case from 50kHz to 20kHz
Corrected error in EM list: CC1120EM_420_970 is corrected to CC1120EM_420_470
Added 274 - 320 MHz band and pointed to app note for more info (added mention of 315
MHz band on front page)
Updated sniff mode current to 2 mA
Added "WaveMatch:" in front of "Advanced digital signal processing ..." on front page
Data rate offset tolerance: specified that 4 byte preamble only applies to 12% offset
Removed solder reflow temperature and moisture sensitivity level under absolute max
ratings
Moved crystal ESR to ‘max’ column
Added History section
SWRS112B
Sept. 2011
Initial release
SWRS112
Aug. 2011
Preliminary Data Sheet
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS112D – REVISED MARCH 2013
Page 24 of 24
PACKAGE OPTION ADDENDUM
www.ti.com
15-Aug-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
CC1120RHBR
ACTIVE
VQFN
RHB
32
3000
Green (RoHS CU NIPDAUAG Level-3-260C-168 HR
& no Sb/Br)
-40 to 85
CC1120
CC1120RHBT
ACTIVE
VQFN
RHB
32
250
Green (RoHS CU NIPDAUAG Level-3-260C-168 HR
& no Sb/Br)
-40 to 85
CC1120
CC1120RHMR
OBSOLETE
VQFN
RHM
32
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC1120
CC1120RHMT
OBSOLETE
VQFN
RHM
32
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC1120
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Aug-2013
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
CC1120RHBR
VQFN
CC1120RHBT
CC1120RHMT
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
RHB
32
3000
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
VQFN
RHB
32
250
180.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
VQFN
RHM
32
0
180.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Jul-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CC1120RHBR
VQFN
RHB
32
3000
338.1
338.1
20.6
CC1120RHBT
VQFN
RHB
32
250
210.0
185.0
35.0
CC1120RHMT
VQFN
RHM
32
0
210.0
185.0
35.0
Pack Materials-Page 2
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