AP09N70P-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
650V
RDS(ON)
0.75Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
9A
S
Description
AP09N70 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
G
D
TO-220
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
9
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5
A
40
A
156
W
40.5
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201310025
AP09N70P-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
650
-
-
V
VGS=10V, ID=4.5A
-
-
0.75
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.5A
-
4.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=9A
-
44
-
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
12
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
19
-
ns
tr
Rise Time
ID=9A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
56
-
ns
tf
Fall Time
VGS=10V
-
24
-
ns
Ciss
Input Capacitance
VGS=0V
-
2660
-
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
-
-
9
A
-
-
40
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=9A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N70P-A-HF
10
10
10V
6.0V
5.0V
ID , Drain Current (A)
8
10V
6.0V
5.0V
4.5V
o
T C =150 C
8
ID , Drain Current (A)
T C =25 o C
6
4
4.5V
6
4
4.0V
2
2
V G = 3 .5 V
4.0V
V G = 3 .5 V
0
0
0
3
6
9
0
12
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =4.5A
V G =10V
2
Normalized RDS(ON)
Normalized BVDSS
1.1
1
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
5
100
IS (A)
T j = 150 o C
o
T j = 25 C
VGS(th) (V)
4
10
3
1
2
0.1
1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N70P-A-HF
f=1.0MHz
10000
I D =9A
C iss
12
V DS =320V
V DS =400V
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
100
C rss
4
0
1
0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
ID (A)
100us
1ms
1
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4