CET CEU02N7 N-channel enhancement mode field effect transistor Datasheet

CED02N7/CEU02N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
700
Units
V
VGS
±30
V
ID
1.6
A
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
IDM
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
S
PD
6
A
43
W
0.34
W/ C
Single Pulsed Avalanche Energy d
EAS
125
mJ
Repetitive Avalanche Current a
IAR
2
A
Repetitive Avalanche Energy
a
Operating and Store Temperature Range
EAR
5.4
mJ
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
2.9
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
2004.October
http://www.cetsemi.com
6 - 10
CED02N7/CEU02N7
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
700
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 700V, VGS = 0V
25
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
6.6
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
2
RDS(on)
VGS = 10V, ID = 1A
5.5
gFS
VDS = 50V, ID = 1A
0.7
S
220
pF
55
pF
30
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 2A,
VGS = 10V, RGEN = 18Ω
19
35
ns
26
50
ns
34
70
ns
Turn-Off Fall Time
tf
15
40
ns
Total Gate Charge
Qg
14
20
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 2A,
VGS = 10V
2.5
nC
8.6
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 60mH, IAS = 2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
6 - 11
1.6
A
1.5
V
6
CED02N7/CEU02N7
2.5
ID, Drain Current (A)
ID, Drain Current (A)
3.0
2.0
1.5
1.0
TJ=150 C
10
0
-55 C
0.5
1.VDS=40V
2.Pulse Test
25 C
0.0
10
0
5
10
15
20
2
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
10
Figure 2. Transfer Characteristics
200
150
100
Coss
50
Crss
0
0
5
10
15
20
25
3.0
2.5
ID=1A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
8
Figure 1. Output Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
6
VGS, Gate-to-Source Voltage (V)
250
1.2
4
VDS, Drain-to-Source Voltage (V)
300
1.3
-1
25
VGS=0V
10
10
10
-25
0
25
50
75
100
125
0
-1
-2
0.4
150
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 12
15
10
VDS=480V
ID=2A
12
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED02N7/CEU02N7
9
6
3
0
0
5
10
15
RDS(ON)Limit
10
100µs
1ms
0
10ms
DC
10
10
20
1
-1
6
TC=25 C
TJ=150 C
Single Pulse
-2
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
0.1
PDM
0.05
t1
t2
0.02
0.01
10
Single Pulse
-2
10
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
6 - 13
10
0
10
1
3
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