CED02N7/CEU02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 700 Units V VGS ±30 V ID 1.6 A Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a IDM Maximum Power Dissipation @ TC = 25 C - Derate above 25 C S PD 6 A 43 W 0.34 W/ C Single Pulsed Avalanche Energy d EAS 125 mJ Repetitive Avalanche Current a IAR 2 A Repetitive Avalanche Energy a Operating and Store Temperature Range EAR 5.4 mJ TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 2.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W 2004.October http://www.cetsemi.com 6 - 10 CED02N7/CEU02N7 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 700 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 700V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 6.6 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 1A 5.5 gFS VDS = 50V, ID = 1A 0.7 S 220 pF 55 pF 30 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω 19 35 ns 26 50 ns 34 70 ns Turn-Off Fall Time tf 15 40 ns Total Gate Charge Qg 14 20 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 2A, VGS = 10V 2.5 nC 8.6 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 60mH, IAS = 2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 6 - 11 1.6 A 1.5 V 6 CED02N7/CEU02N7 2.5 ID, Drain Current (A) ID, Drain Current (A) 3.0 2.0 1.5 1.0 TJ=150 C 10 0 -55 C 0.5 1.VDS=40V 2.Pulse Test 25 C 0.0 10 0 5 10 15 20 2 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 10 Figure 2. Transfer Characteristics 200 150 100 Coss 50 Crss 0 0 5 10 15 20 25 3.0 2.5 ID=1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 8 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 VGS, Gate-to-Source Voltage (V) 250 1.2 4 VDS, Drain-to-Source Voltage (V) 300 1.3 -1 25 VGS=0V 10 10 10 -25 0 25 50 75 100 125 0 -1 -2 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 6 - 12 15 10 VDS=480V ID=2A 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED02N7/CEU02N7 9 6 3 0 0 5 10 15 RDS(ON)Limit 10 100µs 1ms 0 10ms DC 10 10 20 1 -1 6 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 0.1 PDM 0.05 t1 t2 0.02 0.01 10 Single Pulse -2 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 6 - 13 10 0 10 1 3