100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device design easy. Structure NPN epitaxial planar silicon transistor (Resistor built-in types) Dimensions (Unit : mm) DTC114YM DTC114YE 0.7 1.6 0.55 0.3 0.2 (3) 0.8 1.2 0.8 (2) 0.4 0.4 0.2 (1)(2) 0.13 (1) IN (2) GND (3) OUT 0.8 ROHM : VMT3 2.0 0.8 (3) 1.6 2.8 2.1 1.25 0.1Min. (1) 0.15 1.3 (1) GND (2) IN (3) OUT Each lead has same dimensons (2) (1) 0.95 0.95 ROHM : SMT3 EIAJ : SC-59 0.15 1.9 (1) GND (2) IN (3) OUT Each lead has same dimensons Abbreviated symbol : 64 Abbreviated symbol : 64 Packaging specifications Part No. 1.1 0.4 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 2.9 DTC114YKA (3) (2) (1) GND (2) IN (3) OUT 1.0 0.7 0.2 0.15 Abbreviated symbol : 64 0.9 0.3 0.2 0.5 0.5 ROHM : EMT3 Abbreviated symbol : 64 DTC114YUA (1) 0.2 0.5 0.3Min. 0.22 0.1Min. (3) 1.6 1.2 0.32 Inner circuit Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − DTC114YM DTC114YE − DTC114YUA − − DTC114YKA − − OUT R1 IN R2 GND OUT IN − − GND R1=10kΩ R2=47kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.B DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit DTC114YM DTC114YE DTC114YUA DTC114YKA Supply voltage VCC 50 V Input voltage VIN −6 to +40 V IO 70 IC(Max.) 100 Output current mA Power dissipation PD Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Input current Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 1.4 − − VO(on) − 0.1 0.3 V II − − 0.88 mA VI=5V Unit Conditions VCC=5V, IO=100μA V VO=0.3V, IO=1mA IO/II=5mA/0.25mA IO(off) − − 0.5 μA VCC=50V, VI=0V DC current gain GI 68 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ Resistance ratio R2/R1 3.7 4.7 5.7 − − 250 − MHz Output current fT ∗ Transition frequency − − VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor Electrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) 500 VO=5V Ta=100°C 25°C −40°C 2m 1m 500μ Ta=100°C 25°C −40°C 200μ 100μ 50μ 20μ 10μ 5μ 2μ 1μ 0 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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