Rohm DTC114YE 100ma / 50v digital transistors (with built-in resistors) Datasheet

100mA / 50V Digital transistors
(with built-in resistors)
DTC114YM / DTC114YE / DTC114YUA / DTC114YKA
 Applications
Inverter, Interface, Driver
 Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
 Structure
NPN epitaxial planar silicon transistor (Resistor built-in types)
 Dimensions (Unit : mm)
DTC114YM
DTC114YE
0.7
1.6
0.55
0.3
0.2
(3)
0.8
1.2
0.8
(2)
0.4 0.4
0.2
(1)(2)
0.13
(1) IN
(2) GND
(3) OUT
0.8
ROHM : VMT3
2.0
0.8
(3)
1.6
2.8
2.1
1.25
0.1Min.
(1)
0.15
1.3
(1) GND
(2) IN
(3) OUT
Each lead has same dimensons
(2)
(1)
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
(1) GND
(2) IN
(3) OUT
Each lead has same dimensons
Abbreviated symbol : 64
Abbreviated symbol : 64
 Packaging specifications
Part No.
1.1
0.4
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
2.9
DTC114YKA
(3)
(2)
(1) GND
(2) IN
(3) OUT
1.0
0.7
0.2
0.15
Abbreviated symbol : 64
0.9
0.3
0.2
0.5 0.5
ROHM : EMT3
Abbreviated symbol : 64
DTC114YUA
(1)
0.2
0.5
0.3Min.
0.22
0.1Min.
(3)
1.6
1.2
0.32
 Inner circuit
Package
VMT3
EMT3
UMT3
SMT3
Packaging type
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
Basic ordering
unit (pieces)
8000
3000
3000
3000
−
−
−
−
−
DTC114YM
DTC114YE
−
DTC114YUA
−
−
DTC114YKA
−
−
OUT
R1
IN
R2
GND
OUT
IN
−
−
GND
R1=10kΩ R2=47kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.B
DTC114YM / DTC114YE / DTC114YUA / DTC114YKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
DTC114YM DTC114YE DTC114YUA DTC114YKA
Supply voltage
VCC
50
V
Input voltage
VIN
−6 to +40
V
IO
70
IC(Max.)
100
Output current
mA
Power dissipation
PD
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
150
200
mW
 Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Input current
Symbol
Min.
Typ.
Max.
VI(off)
−
−
0.3
VI(on)
1.4
−
−
VO(on)
−
0.1
0.3
V
II
−
−
0.88
mA
VI=5V
Unit
Conditions
VCC=5V, IO=100μA
V
VO=0.3V, IO=1mA
IO/II=5mA/0.25mA
IO(off)
−
−
0.5
μA
VCC=50V, VI=0V
DC current gain
GI
68
−
−
−
VO=5V, IO=5mA
Input resistance
R1
7
10
13
kΩ
Resistance ratio
R2/R1
3.7
4.7
5.7
−
−
250
−
MHz
Output current
fT ∗
Transition frequency
−
−
VCE=10V, IE=−5mA, f=100MHz
∗ Characteristics of built-in transistor
 Electrical characteristic curves
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta=−40°C
25°C
100°C
5
2
1
500m
200m
100m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
500
VO=5V
Ta=100°C
25°C
−40°C
2m
1m
500μ
Ta=100°C
25°C
−40°C
200μ
100μ
50μ
20μ
10μ
5μ
2μ
1μ
0
200
100
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
1
1k
VCC=5V
DC CURRENT GAIN : GI
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
Ta=100°C
25°C
−40°C
100m
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.B
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