AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<[email protected] The AO3700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3700 is Pb-free (meets ROHS & Sony 259 specifications). AO3700L is a Green Product ordering option. AO3700 and AO3700L are electrically identical. SOT-23-5 D K S A Top View G S A 1 2 3 5 D 4 K G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Continuous Drain Current A TA=70°C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25°C IF Continuous Forward Current A TA=70°C IFM Pulsed Forward Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. MOSFET 30 ±12 3.3 2.6 10 Schottky Units V V A PD 1.15 0.7 20 2 1 10 0.92 0.59 TJ, TSTG -55 to 150 -55 to 150 °C Typ Max Units Symbol RθJA RθJL RθJA RθJL 80.3 110 117 43 150 80 109.4 135 136.5 58.5 175 80 V A W °C/W °C/W AO3700 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) gFS VSD IS Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=3.3A 1 10 SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT trr Qrr Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge Units 1.4 1 5 100 2 µA nA V A 51 64 60 100 11.7 0.81 65 90 75 160 mΩ mΩ 1 2.5 S V A 226 39 29 1.4 270 4.6 1.4 0.55 2.6 3.2 14.5 2.1 5.5 nC nC nC ns ns ns ns IF=3.3A, dI/dt=100A/µs IF=3.3A, dI/dt=100A/µs 10.2 3.8 13 ns nC IF=0.5A VR=16V VR=16V, TJ=125°C 0.39 0.5 0.1 V TJ=125°C VGS=4.5V, ID=3.0A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=3.3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max V TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=3.3A VGS=10V, VDS=15V, RL=4.7Ω, RGEN=6Ω VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs 2.5 20 34 5.2 0.8 mΩ pF pF pF Ω mA pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3.5V 12 8 4V 6V VDS=5V 3V 6 ID (A) ID(A) 9 4 6 VGS=2.5V 125°C 3 2 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 0 0.5 25°C 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 3.5 270 1.8 VGS=4.5V Normalized On-Resistance 175 ID=3.0A 1.6 150 RDS(ON) (mΩ) 60 100 5 200 51 VGS=2.5V 125 1.7 VGS=10V ID3.6 =3.3A 1.4 100 1.2 VGS=4.5V 75 50 VGS=10V 25 0 VGS=2.5V ID=1A 1 13 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 100 1.0E+00 90 125° 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 80 1.0E-02 70 25°C 60 1.0E-03 ID=3.3A 25°C 1.0E-04 50 1.0E-05 40 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=3.3A 350 4 Capacitance (pF) 300 VGS (Volts) 3 2 Ciss 250 200 150 51 100 1 Crss 50 0 60 100 Coss 0 0 1 2 Q (nC) 3 4 g Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 270 100.0 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 10.0 1.7 15 100µs 10 10ms 1.0 1s 3.6 Power (W) ID (Amps) 10µs 1ms TJ(Max)=150°C TA=25°C 5 0.1s 10s DC 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 100 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 10 125°C f = 1MHz 80 Capacitance (pF) IF (Amps) 1 0.1 0.01 60 40 20 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.5 Leakage Current (A) 1.0E-02 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 Temperature (°C) 125 0 150 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=135°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000