isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV28F/AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min)- BUV28F 225V(Min)- BUV28AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector-Emitter Voltage VBE= 0 VALUE BUV28F 400 BUV28AF 450 BUV28F 200 BUV28AF 225 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 18 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 7.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 55 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV28F/AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS Collector-Emitter Sustaining Voltage BUV28F VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage MAX IC= 0.2A ;IB= 0; L= 25mH BUV28AF VCE(sat) TYP. UNIT 200 BUV28F VCEO(SUS) MIN V 225 IC= 6A; IB= 0.6A 1.5 V BUV28AF IC= 4A; IB= 0.4A 1.5 BUV28F IC= 6A; IB= 0.6A 2.0 BUV28AF IC= 4A; IB= 0.4A 2.0 V ICEX Collector Cutoff Current VCE=VCESmax;VBE=-1.5V,TJ=125℃ 1.0 mA ICES Collector Cutoff Current VCE=VCESmax;VBE=0,TJ=125℃ 3.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA 0.3 1.0 μs 0.5 1.5 μs 0.1 0.25 μs Switching Times; Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc website：www.iscsemi.cn For BUV28F IC= 6A; IB1= 0.6A; IB2= -1.2A For BUV28AF IC= 4A; IB1= 0.4A; IB2= -0.8A 2