AP2309GEN Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS -30V RDS(ON) 52mΩ ID - 4A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description AP2309 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Parameter Symbol Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage +20 V -4 A -3.2 A ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current -16 A PD@TA=25℃ Total Power Dissipation 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 100 ℃/W 1 201411281AP AP2309GEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-4A - - 52 mΩ VGS=-4.5V, ID=-3A - - 80 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-4A - 9 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA Qg Total Gate Charge ID=-4A - 7 11.2 nC Qgs Gate-Source Charge VDS=-15V - 2.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2.7 - nC td(on) Turn-on Delay Time VDS=-15V - 8 - ns tr Rise Time ID=-1A - 4.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=-10V - 5 - ns Ciss Input Capacitance VGS=0V - 830 1330 pF Coss Output Capacitance VDS=-15V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 10 20 Ω Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-4A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2309GEN 20 20 -10V -7.0V -6.0V -5.0V V G = -4.0V -ID , Drain Current (A) 16 T A = 150 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 16 -ID , Drain Current (A) T A =25 o C 12 8 4 65mΩ 12 8 4 0 0 0 1 2 3 4 5 0 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 70 I D = -3A I D = -4A V GS = -10V T A =25 o C 60 . Normalized RDS(ON) RDS(ON) (mΩ ) 1.4 1.2 1 50 0.8 0.6 40 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 4 I D = -250uA 1.6 T j =150 o C 2 Normalized VGS(th) -IS(A) 3 T j =25 o C 1.2 0.8 1 0.4 2.01E+08 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2309GEN f=1.0MHz 1200 1000 8 65mΩ 800 I D = -4A C (pF) -VGS , Gate to Source Voltage (V) 10 6 V DS = -15V C iss 600 4 400 2 200 C oss C rss 0 0 0 4 8 12 1 16 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 Operation in this area limited by RDS(ON) 100us 1ms 1 . 10ms 0.1 100ms o T A =25 C Single Pulse 1s DC Normalized Thermal Response (Rthja) 100 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty Factor=0.5 0.2 0.1 PDM 0.1 t T 0.05 Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 300℃/W 0.01 Single Pulse 0.01 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 6 V DS = -5V 5 -ID , Drain Current (A) -ID , Drain Current (A) 16 12 8 4 3 2 o T j =150 C 4 1 T j =25 o C T j = -40 o C 0 0 1 2 3 4 0 5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 12. Drain Current v.s. Ambient Temperature 4 AP2309GEN MARKING INFORMATION Part Number : MK MKSS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5