SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD135 VCBO VCEO Collector-base voltage Collector-emitter voltage BD137 Open emitter Emitter -base voltage IC 60 BD139 100 BD135 45 BD137 UNIT 45 Open base BD139 VEBO VALUE 60 V V 100 Open collector 5 V Collector current (DC) 1.5 A ICM Collector current-Peak 2 A IBM Base current-Peak 1 A Pt Total power dissipation 8 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Tamb Operating ambient temperature -65~150 Tmb670 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 100 K/W Rth j-mb Thermal resistance from junction to mounting base 10 K/W SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBE ICBO PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 V Base-emitter voltage IC=500mA ; VCE=2V 1.0 V VCB=30V; IE=0 100 nA VCB=30V; IE=0 Tj=125 10 µA 100 nA Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=5mA ; VCE=2V 40 hFE-2 DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 IC=150mA ; VCE=2V 63 63 100 hFE-3 DC current gain IC=500mA ; VCE=2V 25 Transition frequency IC=50mA; VCE=5V ;f=100MHz fT TYP. 2 250 160 250 190 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD135 BD137 BD139