APS04N60H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 620V RDS(ON) 2.5Ω ID ▼ RoHS Compliant & Halogen-Free 4A G S Description APS04N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Rating Units VDS Symbol Drain-Source Voltage 620 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Drain Current, VGS @ 10V 4 A ID@TC=100℃ Drain Current, VGS @ 10V 2.2 A 15 A 59.5 W 8 mJ 4 A Parameter 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice 4 Value Units 2.1 ℃/W 62.5 ℃/W 1 201501132 APS04N60H-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 620 - - V VGS=10V, ID=2A - - 2.5 Ω VGS=0V, ID=250uA 2 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2A - 3.4 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=1A - 19 30 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8 - nC 2 td(on) Turn-on Delay Time VDD=300V - 20 - ns tr Rise Time ID=2A - 20 - ns td(off) Turn-off Delay Time RG=50Ω - 100 - ns tf Fall Time VGS=10V - 25 - ns Ciss Input Capacitance VGS=0V - 740 1200 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Min. Typ. IS=2A, VGS=0V - - 1.5 V . Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=2A, VGS=0V - 310 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.9 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test o 3.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω 4.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 APS04N60H-HF 8 5 o o T C =150 C 10V 8.0V 7.0V 6.0V 6 10V 8.0V 7.0V 6.0V V G =5.0V 4 ID , Drain Current (A) ID , Drain Current (A) T C =25 C 4 3 2 V G =5.0V 2 1 0 0 0 4 8 12 16 20 24 28 0 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =2A V G =10V 1 . Normalized RDS(ON) Normalized BVDSS 1.1 2 1 0.9 0.8 0 -50 0 50 100 150 -50 o 0 50 100 150 o T j , Junction Temperature ( C) T j , Junction Temperature ( C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 8 1.6 1.4 Normalized VGS(th) IS (A) 6 T j = 25 o C o T j = 150 C 4 1.2 1 0.8 2 0.6 0 0.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 APS04N60H-HF 12 f=1.0MHz 1200 1000 V DS =480V 8 800 C (pF) VGS , Gate to Source Voltage (V) I D =1A 10 6 C iss 600 4 400 2 200 0 0 0 4 8 12 16 20 24 C oss C rss 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 100us 1 1ms 10ms 100ms DC 0.1 o T c =25 C Single Pulse . Normalized Thermal Response (Rthjc) 100 ID (A) 9 V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.01 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) t f Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 APS04N60H-HF MARKING INFORMATION Part Number 04N60H Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5