PHILIPS BLF247B Vhf push-pull power mos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF247B
VHF push-pull power MOS
transistor
Product specification
Philips Semiconductors
August 1994
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
BLF247B
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
1
• Withstands full load mismatch.
2
d
g
s
APPLICATIONS
g
• Large signal applications in the
VHF frequency range.
5
d
5
3
4
Top view
MAM098
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in a 4-lead,
SOT262A1 balanced flange type
package with two ceramic caps. The
mounting flange provides the
common source connection for the
transistor.
PINNING - SOT262A1
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in a antistatic package. The gate-source input must
be protected against static charge during transport or handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
CW, class-B
August 1994
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
225
28
150
≥12
≥55
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
VDS
drain-source voltage (DC)
−
65
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
Ptot
total power dissipation
Tstg
Tj
−
13
A
−
280
W
storage temperature
−65
+150
°C
operating junction temperature
−
+200
°C
up to Tmb = 25 °C; total device;
both sections equally loaded
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to
mounting base
total device; both sections equally 0.63
loaded
K/W
Rth mb-h
thermal resistance from mounting base total device; both sections equally 0.15
to heatsink
loaded
K/W
MBD287
10 2
MBD288
400
Ptot
(W)
ID
(A)
300
(2)
(1)
(2)
200
10
(1)
100
0
1
1
10
V DS (V)
0
10 2
Total device; both sections equally loaded.
(1) Current in this area may be limited by RDSon.
(2) Tmb = 25 °C.
80
120
Th ( o C)
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
August 1994
40
Fig.3 Power derating curves.
3
160
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)DSS
drain-source breakdown
voltage
ID = 50 mA; VGS = 0
65
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
2.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 50 mA; VDS = 10 V
2
−
4.5
V
gfs
forward transconductance
ID = 5 A; VGS = 10 V
3
4.2
−
S
RDSon
drain-source on-state
resistance
ID = 5 A; VGS = 10 V
−
0.2
0.3
Ω
IDSX
drain cut-off current
VGS = 10 V; VDS = 10 V
−
22
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
225
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
180
−
pF
Crs
reverse transfer capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
25
−
pF
MBD298
1
MBD299
40
handbook, halfpage
TC
(mV/K)
0
ID
(A)
30
1
20
2
3
10
4
5
2
10
10
1
1
I D (A)
0
10
0
5
10
15
V GS (V)
20
VDS = 10 V.
VDS = 10 V.
Fig.4
August 1994
Temperature coefficient of gate-source
voltage as a function of drain current,
typical values per section.
Fig.5
4
Drain current as a function of gate-source
voltage, typical values per section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
MBD297
400
MRA930
800
handbook, halfpage
RDSon
C
(pF)
(Ω)
300
600
200
400
100
200
C os
C is
0
0
0
50
100
o
T j ( C)
0
150
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
Fig.7
MBD296
300
C rs
(pF)
200
100
0
0
10
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
August 1994
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
ID = 5 A; VGS = 10 V.
Fig.6
10
Reverse transfer capacitance as a
function of drain-source voltage, typical
values per section.
5
Input and output capacitance as functions
of drain-source voltage, typical values
per section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
APPLICATION INFORMATION
RF performance in a push-pull, common source, class-B test circuit: Th = 25 °C; Rth mb-h = 0.15 K/W.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
225
28
2 × 100
150
≥12
typ. 13.5
≥55
typ. 70
Ruggedness in class-B operation
The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: VDS = 28 V; f = 175 MHz; Th = 25 °C; PL = 150 W; Rth mb-h = 0.15 K/W.
MBD289
20
Gp
handbook, halfpage
100
η
PL
(W)
(%)
(dB)
16
80
η
MBD290
300
handbook, halfpage
200
12
Gp
60
40
8
100
20
4
0
0
50
100
150
0
0
200
250
P L (W)
0
Class-B operation.
VDS = 28 V.
IDQ = 2 × 100 mA.
ZL = 1.3 + j0.6 Ω per section.
f = 225 MHz.
Fig.9
20
Pi (W)
30
Class-B operation.
VDS = 28 V.
IDQ = 2 × 100 mA.
ZL = 1.3 + j0.6 Ω per section.
f = 225 MHz.
Power gain and efficiency as functions of
load power; typical values.
August 1994
10
Fig.10 Load power as a function of input power;
typical values.
6
August 1994
50 Ω
input
VDD1
L3
L2
L1
R7
C2
C3
C1
7
C30
IC1
L5
C4
L4
C5
C29
L7
C6
L6
R6
C7
C27
C28
R5
R4
L9
L8
R3
R2
C11
C10
L11
L10
C9
C8
DUT
C13
R9
L21
C26
C25
L17
C24
L19
C15
L18 L20
C23
L14
C22
V DD2
L16
L13
C14
L12
L15
R8
C12
C17
L23
C16
L22
C20
C18
C19
MBD294
L26
L25
L24
50 Ω
output
VHF push-pull power MOS transistor
handbook, full pagewidth
Fig.11 Test circuit for Class-B operation at 225 MHz.
A
A
R1
C21
V DD1
Philips Semiconductors
Product specification
BLF247B
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
List of components (see Figs 11 and 12)
COMPONENT
DESCRIPTION
VALUE
C1, C2
multilayer ceramic chip
capacitor; note 1
200 pF
C3
multilayer ceramic chip
capacitor; note 1
27 pF
C4, C6, C18
film dielectric trimmer
2 to 9 pF
C5
multilayer ceramic chip
capacitor; note 1
39 pF
C7
multilayer ceramic chip
capacitor; note 1
91 pF
C8, C11, C12,
C13, C27
multilayer ceramic chip
capacitor
100 nF; 50 V
C9, C10
multilayer ceramic chip
capacitor; note 1
2 × 1 nF in parallel
C14
multilayer ceramic chip
capacitor; note 1
2 × 36 pF in parallel
C15
multilayer ceramic chip
capacitor; note 1
18 pF
C16
film dielectric trimmer
2 to 18 pF
C17
multilayer ceramic chip
capacitor; note 1
6.8 pF
C19, C20
multilayer ceramic chip
capacitor; note 1
47 pF
C21, C26,
C29, C30
multilayer ceramic chip
capacitor; note 1
1 nF
DIMENSION
2222 809 09005
2222 852 47104
2222 809 09006
C22, C25, C28 electrolytic capacitor
10 µF; 63 V
C23, C24
multilayer ceramic chip
capacitor; note 1
2 × 470 nF in
parallel
L1, L3, L24,
L26
stripline; note 2
50 Ω
length 80 mm
width 4.8 mm
L2, L25
semi-rigid cable; note 3
50 Ω
ext. conductor:
length 80 mm
diameter 3.6 mm
L4, L5
stripline; note 2
43 Ω
length 30 mm
width 6 mm
L6, L7
stripline; note 2
43 Ω
length 10 mm
width 6 mm
L8, L9
stripline; note 2
43 Ω
length 2 mm
width 6 mm
L10, L11
stripline; note 2
43 Ω
length 4 mm
width 6 mm
L12, L13
stripline; note 2
43 Ω
length 10 mm
width 6 mm
L14, L17
Ferroxcube grade 3B wideband
HF choke
2 in parallel
August 1994
8
CATALOGUE NO.
2222 030 38109
4312 02036642
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
COMPONENT
DESCRIPTION
BLF247B
VALUE
DIMENSION
CATALOGUE NO.
L15, L16
3 turns enamelled 1.6 mm
copper wire
50 nH
length 7.8 mm
internal diameter 6 mm
leads 2 × 10 mm
L18, L19
stripline; note 2
43 Ω
length 6 mm
width 6 mm
L20, L21
stripline; note 2
43 Ω
length 15 mm
width 6 mm
L22, L23
stripline; note 2
43 Ω
length 26.5 mm
width 6 mm
R1, R6
10 turns potentiometer
50 kΩ
R2, R3, R4, R5 metal film resistor
1 kΩ; 0.4 W
R7
metal film resistor
5.11 kΩ; 1 W
R8, R9
metal film resistor
10 Ω; 1 W
IC1
voltage regulator
78L05
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (εr = 2.2);
thickness 1⁄16 inch; thickness of the copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L25 are soldered onto striplines L1 and L26.
130
119
VDD1
L1
IC1
R7
L14
C29
slider R1 C9
R2
C28
C12
C22
R8
C27
C30
L2
C21
C23
to R1, R6
BLF247B
handbook, full pagewidth
L14
L24
VDD1
L15
C8
R3
C1
C2
L6
L4
C3
C4 L5
C5
C6
C7
L7
L8
L10 L12 L18 L20
C14
C15
L11 L13 L19 L21
L9
C19
L22
100
C17
L23
C18 C20
R4
C11
L16
VDD2
R5
slider R6 C10
L25
L26
L17
L3
R9
C24
C13
L17
C25
C26
MBD295
Dimensions in mm.
The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized to serve as a ground plane. Earth
connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 225 MHz class-B test circuit.
August 1994
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
MBD291
4
Zi
(Ω)
MBD293
6
ZL
(Ω)
ri
RL
0
4
xi
4
2
XL
8
12
0
0
100
200
f (MHz)
300
0
VDS = 28 V.
IDQ = 2 × 100 mA.
Th = 25 °C.
PL = 150 W (total device).
100
200
f (MHz)
300
VDS = 28 V.
IDQ = 2 × 100 mA.
Th = 25 °C.
PL = 150 W (total device).
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
MBD292
40
handbook, halfpage
Gp
(dB)
30
20
handbook, halfpage
10
Zi
ZL
MBA379
0
0
100
200
f (MHz)
300
VDS = 28 V.
IDQ = 2 × 100 mA.
Th = 25 °C.
PL = 150 W (total device).
Fig.16 Power gain as a function of frequency,
typical values per section.
Fig.15 Definition of MOS impedances.
August 1994
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
PACKAGE OUTLINE
0.25
11 max
11 max
0.13
2.92
2.29
1.65
5.8
max
1.02
seating plane
21.85
0.25 M
5.9
5.5
(4x)
2.54
1
2
10.4
max
3.3 9.8 15.6
3.0
max
5
3
4
5.525
11.05
27.94
34.3 max
Dimensions in mm.
Fig.17 SOT262A1.
August 1994
11
MSA285 - 2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1994
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
NOTES
August 1994
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
NOTES
August 1994
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
NOTES
August 1994
15
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SCD34
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Document order number:
Date of release: August 1994
9397 738 40011