Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat ts Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time VBE = 0 V PINNING - SOT199 PIN TYP. MAX. UNIT 7.0 5.8 1700 825 12 30 45 1.0 6.5 V V A A W V A µs Ths ≤ 25 ˚C IC = 7.0 A; IB = 1.75 A f = 16 kHz ICsat = 7.0 A; f = 16 kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -65 - 1700 825 12 30 12 20 200 9 45 150 150 V V A A A A mA A W ˚C ˚C MIN. MAX. UNIT - 10 kV ESD LIMITING VALUES SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ) 1 Turn-off current. September 1997 1 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink without heatsink compound Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air TYP. MAX. UNIT - 3.7 K/W - 2.8 K/W 35 - K/W TYP. MAX. UNIT 2500 V ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. - - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 825 13.5 - 1.0 - mA V V 4 22 6 1.0 1.1 8.5 V V TYP. MAX. UNIT 5.8 0.6 6.5 0.8 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 7.0 A; IB = 1.75 A IC = 7.0 A; IB = 1.75 A IC = 0.1 A; VCE = 5 V IC = 7 A; VCE = 1 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (16 kHz line deflection circuit) ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF; VCC = 162 V; IB(end) = 1.5 A; LB = 2 µH; -VBB = 4 V; Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF ICsat + 50v 90 % 100-200R IC 10 % Horizontal tf Oscilloscope t ts IB IBend Vertical t 1R 100R 6V 30-60 Hz - IBM Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 LB IBend 100 0 VCE / V T.U.T. Cfb -VBB min VCEOsust Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times test circuit. ICsat hFE BU2727A/AF 100 VCE = 5 V DIODE Ths = 25 C Ths = 85 C t IBend IB 10 t 20us 26us 64us VCE 1 0.01 t 1 10 100 IC / A Fig.6. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) Fig.3. Switching times waveforms (16 kHz). September 1997 0.1 3 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor hFE BU2725AF ts/tf/ us BU2727A/AF VCE = 1 V BU2527AFX,DFX 10 100 Ths = 25 C Ths = 85 C 9 8 7 6 10 5 4 3 2 1 1 0.01 0.1 1 10 0 100 IC / A Fig.7. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) VCEsat / V 0 1 2 3 4 IB / A Fig.10. Limit storage and fall time. ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz BU2727A/AF Normalised Power Derating PD% 120 10 with heatsink compound 110 Ths = 85 C Ths = 25 C 100 90 80 70 1 60 IC/IB = 12 50 40 IC/IB = 5 0.1 30 20 10 0 0.01 0.1 1 10 IC / A 0 100 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB VBEsat / V 20 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) BU2727A/AF 10 1 Zth / (K/W) BU2525AF IC = 6 A 0.9 1 0.8 0.1 0.2 0.1 0.05 0.02 4A 0.7 0.6 0.5 0 1 2 3 IB / A D=0 0.001 1E-06 4 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC September 1997 PD 0.01 Ths = 85 C Ths = 25 C tp D= t T 1E-04 1E-02 t/s tp T 1E+00 Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T 4 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF VCC IC / A 35 BU2727A/AF/D/DF 30 25 LC Area where fails occur 20 VCL IBend 15 LB T.U.T. -VBB 10 CFB 5 0 100 September 1997 1000 1700 VCE / V Fig.13. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax 5 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.300