APT8024JLL
800V 29A 0.240Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8024JLL
UNIT
800
Volts
29
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
460
Watts
Linear Derating Factor
3.68
W/°C
PD
TJ,TSTG
116
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
29
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 14.5A)
TYP
MAX
Volts
0.240
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7075 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8024JLL
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
860
Reverse Transfer Capacitance
f = 1 MHz
155
VGS = 10V
160
VDD = 400V
24
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 29A @ 25°C
tr
td(off)
tf
5
VDD = 400V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
4
INDUCTIVE SWITCHING @ 25°C
6
605
VDD = 533V, VGS = 15V
6
ns
23
ID = 29A @ 25°C
Turn-off Delay Time
nC
9
VGS = 15V
Rise Time
pF
105
RESISTIVE SWITCHING
Turn-on Delay Time
UNIT
4670
VGS = 0V
3
MAX
ID = 29A, RG = 5Ω
490
INDUCTIVE SWITCHING @ 125°C
975
VDD = 533V VGS = 15V
µJ
585
ID = 29A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
TYP
29
Continuous Source Current (Body Diode)
116
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -29A, dl S/dt = 100A/µs)
850
Q rr
Reverse Recovery Charge (IS = -29A, dl S/dt = 100A/µs)
22
dv/
MAX
Peak Diode Recovery
dt
dv/
(Body Diode)
1.3
(VGS = 0V, IS = -29A)
dt
UNIT
Amps
Volts
ns
µC
10
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.27
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.95mH, RG = 25Ω, Peak IL = 29A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
0.10
0.3
t1
t2
0.05
0
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7075 Rev B
9-2004
0.3
0.25
0.1
SINGLE PULSE
0.05
10-5
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0409
Power
(watts)
0.225
0.00361
0.0246F
0.406F
148F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
100
60
80
60
40
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
40
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
ID, DRAIN CURRENT (AMPERES)
7V
30
6.5V
20
6V
10
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
V
2.0
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
1.2
= 14.5A
GS
= 10V
1.5
1.0
0.5
0.0
-50
D
1.30
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
NORMALIZED TO
= 10V @ I = 14.5A
GS
1.15
30
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
7.5V
50
1.1
1.0
0.9
0.8
9-2004
0
8V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7075 Rev B
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VGS =15 &10 V
70
0
20
APT8024JLL
80
10,000
100µS
10
1mS
5
= 29A
D
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Coss
100
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
50
0
APT8024JLL
20,000
114
140
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
td(off)
120
V
DD
R
70
G
= 533V
= 5Ω
T = 125°C
100
V
DD
R
G
80
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
J
60
= 5Ω
T = 125°C
J
L = 100µH
60
40
50
tf
40
30
tr
20
20
0
L = 100µH
10
td(on)
0
10
0
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
2000
V
DD
R
G
V
= 533V
I
3500
= 5Ω
diode reverse recovery.
1000
Eon
500
Eoff
10
15
20
25 30 35 40 45 50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
9-2004
050-7075 Rev B
L = 100µH
5
= 533V
= 29A
J
J
E ON includes
0
DD
D
20
T = 125°C
T = 125°C
1500
10
L = 100µH
E ON includes
3000
Eoff
diode reverse recovery.
2500
2000
Eon
1500
1000
500
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8024JLL
Gate Voltage
10 %
90%
Gate Voltage
T = 125 C
J
td(on)
td(off)
Drain Current
90%
T = 125 C
J
Drain Voltage
90%
t
f
tr
5%
5%
10%
Drain Current
10 %
Drain Voltage
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
9-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7075 Rev B
7.8 (.307)
8.2 (.322)