CED3301/CEU3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit -30 Units V VGS ±20 V ID -28 A IDM -100 A 42 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.33 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 2. 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CED3301/CEU3301 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -30V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -5.3A -1 26 32 mΩ VGS = -4.5V, ID = -2A 38 50 mΩ VDS = -10V, ID = -5.3A 10 S 1165 pF 265 pF 165 pF Dynamic Characteristics c Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 16 32 ns 9 18 ns 61 122 ns Turn-Off Fall Time tf 25 50 ns Total Gate Charge Qg 19.6 26 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -5.3A, VGS = -10V 4.5 nC 3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -2.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 -28 A -1.2 V 6 CED3301/CEU3301 50 -VGS=10,8,6V 24 -ID, Drain Current (A) -ID, Drain Current (A) 30 -VGS=4V 18 12 6 40 30 20 25 C 10 TJ=125 C -VGS=3V 0 0 0.5 1 1.5 2 2.5 0 3 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 750 500 Coss 250 Crss 0 5 10 15 20 25 5 6 2.2 1.9 ID=-5.3A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 1. Output Characteristics 1000 1.2 2 -VGS, Gate-to-Source Voltage (V) 1250 1.3 1 -VDS, Drain-to-Source Voltage (V) 1500 0 0 -55 C -25 0 25 50 75 100 125 150 10 2 10 1 10 0 10 -1 VGS=0V 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =-15V DS ID=-5.3A 10 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CED3301/CEU3301 6 4 2 0 0 5 10 15 RDS(ON)Limit 10 1 10 0 10 20 2 100µs 1ms 10ms DC 6 TC=25 C TJ=150 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2