UMS CHA2094B 36-40ghz low noise high gain amplifier Datasheet

CHA2094b
RoHS COMPLIANT
36-40GHz Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
Vds
Vds
The CHA2094 is a three-stage monolithic low
noise amplifier. It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process: 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
IN
OUT
Vgs1&2
Main Features
Vgs3
Typical on wafer measurements :
Gain & NF ( dB )
■ Broadband performances: 36-40GHz
■ 3.0dB Noise Figure
■ 21dB gain
■ ±1.5dB gain flatness
■ Low DC power consumption, 60mA @ 3.5V
■ Chip size:
1.72 X 1.08 X 0.10 mm
24
20
16
12
8
4
0
34
35
36
37
38
39
40
41
42
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
NF
Parameter
Min
Typ
Max
Unit
40
GHz
Operating frequency range
36
Small signal gain
18
21
dB
Output power at 1dB gain compression
5
8
dBm
Noise figure
3.0
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20949312 – 08-Nov.-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise Amplifier
CHA2094b
Electrical Characteristics
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Fop
G
∆G
Parameter
Min
Operating frequency range (1)
36
Small signal gain (1)
18
Small signal gain flatness (1)
∆Gsb
Gain flatness over 40MHz ( within -30 ; +75°C )
Is
P1dB
VSWRin
Max
Unit
40
GHz
21
dB
±1.5
dB
0.5
dBpp
Reverse isolation (1)
25
30
dB
Output power at 1dB gain compression
5
8
dBm
Input VSWR (1)
VSWRout Output VSWR (1)
NF
Noise figure (2)
Vd
DC Voltage
Id
Typ
Vd
Vg
-2
Bias current (2)
2.5:1
3.0:1
2.5:1
3.0:1
3.0
4.0
dB
3.5
-0.25
4
+0.4
V
V
60
100
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +155
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20949312 – 08-Nov.-99
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2094b
Typical Scattering Parameters (On wafer Sij measurements)
Bias Conditions:
Vd = 3.5Volt, Id = 60mA.
Freq.
GHz
25,00
26,00
27,00
28,00
29,00
30,00
31,00
32,00
33,00
34,00
35,00
S11
dB
-2,96
-3,22
-3,67
-4,43
-5,76
-8,60
-15,20
-24,70
-32,32
-21,29
-14,52
S11
/°
165,27
155,96
144,32
129,06
107,80
75,37
16,43
-117,32
128,04
-38,29
-70,72
S12
dB
-48,02
-49,76
-51,68
-53,38
-51,07
-49,11
-43,10
-41,34
-41,14
-40,51
-39,47
S12
/°
140,03
133,48
113,25
148,20
153,30
129,75
102,32
47,85
-5,29
-43,14
-69,20
S21
dB
-16,95
-11,32
-5,73
0,02
5,87
11,83
17,22
19,91
20,48
20,60
20,79
S21
/°
-110,44
-109,43
-112,96
-123,12
-138,63
-163,77
158,34
110,72
71,50
40,20
12,71
S22
dB
-10,05
-10,84
-11,84
-13,68
-15,98
-21,67
-29,55
-17,96
-17,40
-19,96
-24,56
S22
/°
-118,86
-124,50
-133,29
-140,35
-152,02
-162,85
-46,20
-70,62
-106,13
-133,62
178,55
36,00
37,00
38,00
39,00
40,00
-11,33
-9,96
-9,89
-10,20
-11,51
-94,87
-113,38
-129,95
-144,39
-153,53
-38,30
-37,80
-35,94
-35,21
-34,78
-90,11
-109,61
-126,74
-146,49
-160,72
20,92
20,87
20,54
19,98
19,57
-13,60
-38,94
-63,47
-85,35
-105,56
-24,34
-18,55
-14,97
-13,19
-11,91
95,27
56,67
35,23
15,89
7,58
41,00
42,00
43,00
44,00
45,00
46,00
47,00
48,00
49,00
50,00
51,00
52,00
53,00
54,00
55,00
-13,21
-13,92
-13,55
-13,26
-12,63
-11,41
-10,18
-8,38
-5,83
-4,17
-2,17
-1,17
-0,84
-0,55
-0,36
-157,59
-154,55
-158,17
-169,25
174,58
151,40
125,52
94,26
71,80
49,01
29,23
11,23
-2,48
-14,01
-22,96
-34,26
-33,87
-33,94
-33,11
-32,50
-32,48
-31,57
-29,97
-31,11
-32,37
-36,86
-34,48
-38,67
-40,49
-42,95
-175,92
172,60
156,97
149,30
134,15
126,00
119,05
102,75
79,31
66,58
59,57
52,60
15,86
-6,97
-5,11
18,86
18,41
18,09
17,84
17,56
17,17
16,79
16,21
15,23
13,86
12,36
10,48
8,26
5,94
3,49
-125,69
-143,91
-160,70
-178,94
162,79
143,77
124,08
102,47
80,21
58,54
38,69
19,05
1,67
-13,96
-27,62
-10,90
-10,93
-11,24
-10,76
-10,73
-10,27
-9,19
-8,20
-7,79
-7,34
-8,29
-9,08
-9,77
-10,59
-11,16
-5,61
-16,38
-20,60
-22,75
-25,23
-26,04
-30,65
-37,96
-48,28
-61,88
-75,36
-85,34
-96,49
-106,13
-116,76
Ref. : DSCHA20949312 – 08-Nov.-99
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2094b
Typical Output Power ( P-1dB gain compression ) Measurements.
( CW on wafer )
Conditions : Vd = 3.5 Volt, Frequency = 38 GHz
Gain & P-1dB ( dB, dBm )
22
20
18
16
Gain
P-1dB
14
12
10
8
6
4
20
30
40
50
60
70
80
90
100
Current Id ( mA )
Conditions: Id = 60 mA, Frequency = 38 GHz
Gain & P-1dB ( dB, dBm )
22
20
18
16
Gain
P-1dB
14
12
10
8
6
4
2.5
3
3.5
4
4.5
Bias voltage Vd ( Volt )
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Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2094b
Typical (Gain & NF) versus Id Measurements (on wafer)
24
Gain ( dB )
19
Gain
14
NF
9
4
0
10
20
30
40
50
60
70
80
90
10
9
8
7
6
5
4
3
2
1
0
100
NF ( dB )
Conditions: Vd = 3.5Volt, Frequency = 38GHz
Current Id ( mA )
Typical Measurements in Test Jig
Bias Conditions:
Vd = 3.5Volt, Id = 50mA
24
10
9
8
7
6
GAIN
14
NF
5
4
NF ( dB )
Gain ( dB )
19
3
9
2
1
4
0
36
37
38
39
40
41
42
43
44
45
46
47
Frequency ( GHz )
Ref. : DSCHA20949312 – 08-Nov.-99
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2094b
Typical Bias Tuning for Low Noise Operation
The circuit schematic is given below:
Vd
100
100
50
IN
OUT
Vg 3
Vg 1,2
For low noise operation, a separate access to the gate voltages of the two first stages (Vgs1&2), and of
the output stage (Vgs3) is provided.
Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and
15 mA for each of the two first stages (50 mA for the amplifier).
The first step to bias the amplifier is to tune the Vgs1&2 = -1V, and Vgs3 to drive 20 mA for the full
amplifier. Then Vgs1&2 is reduced to obtain 50 mA of current through the amplifier.
A fine tuning of the noise figure may be obtained by modifying the Vgs1&2 bias voltage, but keeping
the previous value for Vgs3.
Ref. : DSCHA20949312 – 08-Nov.-99
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2094b
Chip Assembly and Mechanical Data
To Vdd DC Drain supply feed
100pF
IN
OUT
100pF
100pF
To Vgs 1&2 DC Gate supply feed
To Vgs 3 DC Gate supply feed
Note: Supply feed should be capacitively bypassed.
1720 ± 10
1125
505
1080 ± 10
415
340
415
710
Bonding pad positions
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref. : DSCHA20949312 – 08-Nov.-99
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2094b
Ordering Information
Chip form
:
CHA2094b99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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