CHA2094b RoHS COMPLIANT 36-40GHz Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT Vgs1&2 Main Features Vgs3 Typical on wafer measurements : Gain & NF ( dB ) ■ Broadband performances: 36-40GHz ■ 3.0dB Noise Figure ■ 21dB gain ■ ±1.5dB gain flatness ■ Low DC power consumption, 60mA @ 3.5V ■ Chip size: 1.72 X 1.08 X 0.10 mm 24 20 16 12 8 4 0 34 35 36 37 38 39 40 41 42 Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB NF Parameter Min Typ Max Unit 40 GHz Operating frequency range 36 Small signal gain 18 21 dB Output power at 1dB gain compression 5 8 dBm Noise figure 3.0 4.0 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20949312 – 08-Nov.-99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Low Noise Amplifier CHA2094b Electrical Characteristics Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 36 Small signal gain (1) 18 Small signal gain flatness (1) ∆Gsb Gain flatness over 40MHz ( within -30 ; +75°C ) Is P1dB VSWRin Max Unit 40 GHz 21 dB ±1.5 dB 0.5 dBpp Reverse isolation (1) 25 30 dB Output power at 1dB gain compression 5 8 dBm Input VSWR (1) VSWRout Output VSWR (1) NF Noise figure (2) Vd DC Voltage Id Typ Vd Vg -2 Bias current (2) 2.5:1 3.0:1 2.5:1 3.0:1 3.0 4.0 dB 3.5 -0.25 4 +0.4 V V 60 100 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2 voltage. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 5.0 V Id Drain bias current 150 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20949312 – 08-Nov.-99 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2094b Typical Scattering Parameters (On wafer Sij measurements) Bias Conditions: Vd = 3.5Volt, Id = 60mA. Freq. GHz 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 S11 dB -2,96 -3,22 -3,67 -4,43 -5,76 -8,60 -15,20 -24,70 -32,32 -21,29 -14,52 S11 /° 165,27 155,96 144,32 129,06 107,80 75,37 16,43 -117,32 128,04 -38,29 -70,72 S12 dB -48,02 -49,76 -51,68 -53,38 -51,07 -49,11 -43,10 -41,34 -41,14 -40,51 -39,47 S12 /° 140,03 133,48 113,25 148,20 153,30 129,75 102,32 47,85 -5,29 -43,14 -69,20 S21 dB -16,95 -11,32 -5,73 0,02 5,87 11,83 17,22 19,91 20,48 20,60 20,79 S21 /° -110,44 -109,43 -112,96 -123,12 -138,63 -163,77 158,34 110,72 71,50 40,20 12,71 S22 dB -10,05 -10,84 -11,84 -13,68 -15,98 -21,67 -29,55 -17,96 -17,40 -19,96 -24,56 S22 /° -118,86 -124,50 -133,29 -140,35 -152,02 -162,85 -46,20 -70,62 -106,13 -133,62 178,55 36,00 37,00 38,00 39,00 40,00 -11,33 -9,96 -9,89 -10,20 -11,51 -94,87 -113,38 -129,95 -144,39 -153,53 -38,30 -37,80 -35,94 -35,21 -34,78 -90,11 -109,61 -126,74 -146,49 -160,72 20,92 20,87 20,54 19,98 19,57 -13,60 -38,94 -63,47 -85,35 -105,56 -24,34 -18,55 -14,97 -13,19 -11,91 95,27 56,67 35,23 15,89 7,58 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 51,00 52,00 53,00 54,00 55,00 -13,21 -13,92 -13,55 -13,26 -12,63 -11,41 -10,18 -8,38 -5,83 -4,17 -2,17 -1,17 -0,84 -0,55 -0,36 -157,59 -154,55 -158,17 -169,25 174,58 151,40 125,52 94,26 71,80 49,01 29,23 11,23 -2,48 -14,01 -22,96 -34,26 -33,87 -33,94 -33,11 -32,50 -32,48 -31,57 -29,97 -31,11 -32,37 -36,86 -34,48 -38,67 -40,49 -42,95 -175,92 172,60 156,97 149,30 134,15 126,00 119,05 102,75 79,31 66,58 59,57 52,60 15,86 -6,97 -5,11 18,86 18,41 18,09 17,84 17,56 17,17 16,79 16,21 15,23 13,86 12,36 10,48 8,26 5,94 3,49 -125,69 -143,91 -160,70 -178,94 162,79 143,77 124,08 102,47 80,21 58,54 38,69 19,05 1,67 -13,96 -27,62 -10,90 -10,93 -11,24 -10,76 -10,73 -10,27 -9,19 -8,20 -7,79 -7,34 -8,29 -9,08 -9,77 -10,59 -11,16 -5,61 -16,38 -20,60 -22,75 -25,23 -26,04 -30,65 -37,96 -48,28 -61,88 -75,36 -85,34 -96,49 -106,13 -116,76 Ref. : DSCHA20949312 – 08-Nov.-99 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2094b Typical Output Power ( P-1dB gain compression ) Measurements. ( CW on wafer ) Conditions : Vd = 3.5 Volt, Frequency = 38 GHz Gain & P-1dB ( dB, dBm ) 22 20 18 16 Gain P-1dB 14 12 10 8 6 4 20 30 40 50 60 70 80 90 100 Current Id ( mA ) Conditions: Id = 60 mA, Frequency = 38 GHz Gain & P-1dB ( dB, dBm ) 22 20 18 16 Gain P-1dB 14 12 10 8 6 4 2.5 3 3.5 4 4.5 Bias voltage Vd ( Volt ) Ref. : DSCHA20949312 – 08-Nov.-99 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2094b Typical (Gain & NF) versus Id Measurements (on wafer) 24 Gain ( dB ) 19 Gain 14 NF 9 4 0 10 20 30 40 50 60 70 80 90 10 9 8 7 6 5 4 3 2 1 0 100 NF ( dB ) Conditions: Vd = 3.5Volt, Frequency = 38GHz Current Id ( mA ) Typical Measurements in Test Jig Bias Conditions: Vd = 3.5Volt, Id = 50mA 24 10 9 8 7 6 GAIN 14 NF 5 4 NF ( dB ) Gain ( dB ) 19 3 9 2 1 4 0 36 37 38 39 40 41 42 43 44 45 46 47 Frequency ( GHz ) Ref. : DSCHA20949312 – 08-Nov.-99 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2094b Typical Bias Tuning for Low Noise Operation The circuit schematic is given below: Vd 100 100 50 IN OUT Vg 3 Vg 1,2 For low noise operation, a separate access to the gate voltages of the two first stages (Vgs1&2), and of the output stage (Vgs3) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and 15 mA for each of the two first stages (50 mA for the amplifier). The first step to bias the amplifier is to tune the Vgs1&2 = -1V, and Vgs3 to drive 20 mA for the full amplifier. Then Vgs1&2 is reduced to obtain 50 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1&2 bias voltage, but keeping the previous value for Vgs3. Ref. : DSCHA20949312 – 08-Nov.-99 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2094b Chip Assembly and Mechanical Data To Vdd DC Drain supply feed 100pF IN OUT 100pF 100pF To Vgs 1&2 DC Gate supply feed To Vgs 3 DC Gate supply feed Note: Supply feed should be capacitively bypassed. 1720 ± 10 1125 505 1080 ± 10 415 340 415 710 Bonding pad positions (Chip thickness: 100µm. All dimensions are in micrometers) Ref. : DSCHA20949312 – 08-Nov.-99 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Low Noise Amplifier CHA2094b Ordering Information Chip form : CHA2094b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20949312 – 08-Nov.-99 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice