AP9962AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D2 ▼ Single Drive Requirement D1 D2 D1 G2 S2 S1 40V RDS(ON) 25mΩ ID ▼ Surface Mount Package SO-8 BVDSS 7A G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 D1 G2 G1 The SO-8 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 S2 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 40 V ± 20 V 3 7 A 3 5.5 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 20 A PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 200810282 AP9962AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 40 - - V VGS=10V, ID=7A - - 25 mΩ VGS=4.5V, ID=5A - - 40 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 18 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=32V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ±20V - - ±100 nA ID=7A - 12 30 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=32V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7.4 - nC VDS=20V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 23 - ns tf Fall Time RD=20Ω - 5.5 - ns Ciss Input Capacitance VGS=0V - 820 1350 pF Coss Output Capacitance VDS=25V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time Is=7A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9962AGM 30 30 10V 7.0V 5.0V 4.5V ID , Drain Current (A) T A =150 o C ID , Drain Current (A) o T A =25 C 20 10 10V 7.0V 5.0V 4.5V 20 10 V G =3.0V V G =3.0V 0 0 0 0.5 1 1.5 2 2.5 0 3 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.8 I D =7A V G =10V ID=7A 1.6 T A =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 26 22 1.4 1.2 1.0 18 0.8 14 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4 10 8 2 T j =25 o C o T j =150 C VGS (th) IS(A) 6 4 1.6 1.2 2 0 0.8 0 0.4 0.8 1.2 V SD ,Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9962AGM f=1.0MHz 10000 14 I D =7A V DS =20V V DS =24V V DS =32V 10 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 10 0 0 5 10 15 20 25 1 30 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 100us 1ms 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse Normalized Thermal Response (Rthja) 100 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) DUTY=0.5 0.2 0.1 PDM 0.1 t T 0.05 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W 0.02 0.01 Single Pulse DC 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 T j =25 o C ID , Drain Current (A) V DS =5V T j =150 o C VG 30 QG 4.5V QGS 20 QGD 10 Charge Q 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 - 0.90 α 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number 9962AGM YWWSSS Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5