ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit 40 PW≤10μs, duty cycle≤1% V 65 A 195 A 50 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 35 mJ 33 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=50μH, IAV=33A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=40V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V Marking : ATP207 Ratings min typ Unit max 40 V 1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 91708PA TI IM TC-00001572 No. A1319-1/4 ATP207 Continued from preceding page. Parameter Symbol Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Conditions Ratings min typ Unit max 1.5 2.6 V RDS(on)1 VDS=10V, ID=1mA VDS=10V, ID=33A ID=33A, VGS=10V RDS(on)2 ID=17A, VGS=4.5V Input Capacitance Ciss VDS=20V, f=1MHz 2710 pF Output Capacitance Coss VDS=20V, f=1MHz 330 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 220 pF Turn-ON Delay Time td(on) See specified Test Circuit. 27 ns Rise Time tr See specified Test Circuit. 290 ns Turn-OFF Delay Time td(off) tf See specified Test Circuit. 170 ns Fall Time See specified Test Circuit. 110 ns Total Gate Charge Qg VDS=20V, VGS=10V, ID=65A 54 nC Gate-to-Source Charge Qgs nC Qgd 11 nC Diode Forward Voltage VSD VDS=20V, VGS=10V, ID=65A VDS=20V, VGS=10V, ID=65A IS=65A, VGS=0V 14 Gate-to-Drain “Miller” Charge Static Drain-to-Source On-State Resistance 12 20 S 7 9.1 mΩ 11 15.5 mΩ 1.0 1.2 V Package Dimensions unit : mm (typ) 7057-001 1.5 4.6 0.5 7.3 0.55 0.7 0.5 3 0.8 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 1.7 2 1 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 SANYO : ATPAK Switching Time Test Circuit 10V 0V VDD=20V VIN ID=33A RL=0.61Ω VIN D PW=10μs D.C.≤1% VOUT G ATP207 P.G 50Ω S No. A1319-2/4 ATP207 ID -- VDS V 40 30 50 40 30 VGS=3.5V 20 10 Tc=25°C Single pulse 10 1.0 1.5 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 33A 15 10 5 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 10 Tc= 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 25° 5°C --2 75°C 5 3 2 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 4.5 5.0 15 10 =33A V, I D =10.0 VGS 5 --40 --20 0 20 40 60 80 100 120 IS -- VSD 100 7 5 3 2 10 7 5 3 2 tf 100 7 5 tr td(on) 3 160 VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT14028 f=1MHz Ciss 3 td(off) 140 IT14026 5 2 6.0 A 7 VDD=20V VGS=10V 3 5.5 IT14024 =17 V, I D =4.5 VGS Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 5 7 100 IT14027 SW Time -- ID 1000 4.0 20 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 3 0.1 3.5 Case Temperature, Tc -- °C 3 2 3.0 Single pulse 0 --60 16 VDS=0V Single pulse 5 2.5 RDS(on) -- Tc IT14025 | yfs | -- ID 7 2.0 1.5 Gate-to-Source Voltage, VGS -- V 0 2 1.0 25 20 0 0.5 0 IT14023 Tc=25°C Single pulse ID=17A 0 2.0 5°C 25°C --25°C 0.5 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25 ° C 20 C 4.0V 5°C 50 60 --25° 60 70 Tc= 7 Drain Current, ID -- A 10. V 70 80 4.5V 1 6 .0 Drain Current, ID -- A 80 VDS=10V Single pulse 90 0V 90 ID -- VGS 100 6.0 8.0V 100 2 1000 7 5 Coss 3 Crss 2 2 100 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14029 7 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 40 IT14030 No. A1319-3/4 ATP207 VGS -- Qg 10 3 2 7 6 10 0 20 30 40 50 Total Gate Charge, Qg -- nC PD -- Tc 60 30 20 10 0 40 60 80 100 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14010 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT14032 EAS -- Ta 120 40 20 2 IT14031 50 0 Tc=25°C Single pulse 0.1 0.1 Avalanche Energy derating factor -- % 60 Allowable Power Dissipation, PD -- W 1.0 7 5 3 2 1 0 Operation in this area is limited by RDS(on). 3 2 n 2 0μ s io 3 3 2 10 7 5 s 10 m 0m s s 10 at er 4 ID=65A op 5 100 7 5 PW≤10μs 10 μs 10 1m C Drain Current, ID -- A 8 IDP=195A D Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=20V ID=65A 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT14011 Note on usage : Since the ATP207 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1319-4/4