JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T BCW68 SOT-23 TRANSISTOR (PNP) FEATURES Complementary to BCW66, BCW68 is subdivided into 1. BASE 2. EMITTER 3. COLLECTOR three groups F, G and H according to its DC current gain. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collector Power Dissipation 330 mW Thermal Resistance From Junction To Ambient 379 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 10μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-45 V, IE=0 -0.02 Collector cut-off current IEBO VEB=-4 V, IC=0 -0.02 hFE1 hFE2 DC current gain hFE3 hFE4 Collector-emitter saturation voltage VCE(sat) VBE(sat) Base-emitter saturation voltage fT Cob Cib Transition frequency Output capacitance Input capacitance VCE=-10V, IC=-0. 1mA VCE=-1V, IC=- 10mA VCE=-1V, IC=- 100mA VCE=-2V, IC=- 500mA F G H F G H F G H F G H IC=-100mA, IB=-10mA 35 50 80 75 120 180 100 160 250 35 60 100 μA μA 250 400 630 -0.3 V IC=-500mA, IB=-50mA -0.7 V IC=-100mA, IB=-10mA -1.25 V IC=-500mA, IB=-50mA -2 V VCE= -5V,IC=-50mA,f=20MHz 200 MHz VCB= -10V,IE=0,f=1MHz 6 pF VEB= -0.5V,IE=0,f=1MHz 60 pF MARKING Rank Range Marking www.cj-elec.com F 100-250 DF G H 160-400 DG 250-630 DH 1 D,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic -720uA -800uA COMMON EMITTER Ta=25℃ -560uA -640uA DC CURRENT GAIN COLLECTOR CURRENT o -400uA -200 -320uA -150 -240uA -100 -160uA -50 COMMON EMITTER VCE=-1V 700 -480uA -250 IC (mA) -300 hFE —— IC 800 hFE -350 Ta=100 C 600 500 400 o Ta=25 C 300 200 100 IB=-80uA -0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE -7 -8 -0.1 VBEsat —— IC -1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.0 Ta=25℃ -0.6 -0.4 Ta=100℃ IC -100 -800 (mA) IC β=10 -400 -300 -200 Ta=100℃ -100 -0.2 -10 COLLECTOR CURRENT VCEsat —— -500 β=10 -0.8 -1 (V) Ta=25℃ -0.0 -0.1 -1 -10 -100 COLLECTOR CURRENT fT —— (mA) IC 100 -10 Cob / Cib —— (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 250 C 200 -800 -100 IC Cib CAPACITANCE TRANSITION FREQUENCY -1 COLLECTOR CURRENT fT (MHz) 300 IC -0 -0.1 -800 150 100 10 Cob COMMON EMITTER VCE=-5V 50 o Ta=25 C 0 -1 -10 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 0.4 —— 1 -0.1 -100 IC -1 REVERSE VOLTAGE (mA) -10 V -20 (V) Ta 0.33 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 A,Jun,2014 D,Oct,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 D,Oct,2014 A,Jun,2014