BFG424F NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ ■ ■ ■ ■ Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance 1.3 Applications ■ Radio Frequency (RF) front end wideband applications such as: ◆ analog and digital cellular telephones ◆ cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) ◆ radar detectors ◆ pagers ◆ Satellite Antenna TeleVison (SATV) tuners ◆ high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB) 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 4.5 V IC collector current Ptot total power dissipation Tsp ≤ 90 °C [1] - 25 30 mA - - 135 mW BFG424F Philips Semiconductors NPN 25 GHz wideband transistor Table 1: Quick reference data …continued Symbol Parameter Conditions Min Typ Max hFE DC current gain IC = 25 mA; VCE = 2 V; Tj = 25 °C 50 80 120 CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 102 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 25 - GHz Gp(max) maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 23 - dB NF noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt - 1.2 - dB [2] Unit [1] Tsp is the temperature at the soldering point of the emitter pins. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG), see Figure 8. 2. Pinning information Table 2: Pinning Pin Description 1 emitter 2 base 3 emitter 4 collector Simplified outline 3 Symbol 4 4 2 1, 3 2 1 mbb159 3. Ordering information Table 3: Ordering information Type number BFG424F Package Name Description Version - plastic surface mounted flat pack package; reverse pinning; 4 leads SOT343F 4. Marking Table 4: Marking Type number Marking code [1] BFG424F NE* [1] * = p: made in Hong Kong. BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 2 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 4.5 V VEBO emitter-base voltage open collector - 1 V IC collector current - 30 mA - 135 mW Tsp ≤ 90 °C [1] Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C [1] Tsp is the temperature at the soldering point of the emitter pins. 6. Thermal characteristics Table 6: Symbol Rth(j-sp) [1] Thermal characteristics Parameter Conditions thermal resistance from junction to solder point Tsp ≤ 90 °C [1] Typ Unit 340 K/W Tsp is the temperature at the soldering point of the emitter pins. 001aad817 200 Ptot (mW) 150 100 50 0 0 40 80 120 160 Tsp (°C) Fig 1. Power derating curve BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 3 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 7. Characteristics Table 7: Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 mA 10 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 4.5 - - V V(BR)EBO open-collector emitter-base breakdown voltage IE = 2.5 µA; IC = 0 mA 1 - - V ICBO collector-base cut-off current IE = 0 mA; VCB = 4.5 V - - 15 nA hFE DC current gain IC = 25 mA; VCE = 2 V 50 80 120 CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 363 - fF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 475 - fF CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 102 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 25 - GHz Gp(max) maximum power gain - 23 - dB |s21|2 insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 18.5 - dB NF noise figure IC = 2 mA; VCE = 2 V; f = 900 MHz; ΓS = Γopt - 0.8 - dB IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt - 1.2 - dB IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C PL(1dB) output power at 1 dB gain compression IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS = ZS(opt); ZL = ZL(opt) [2] - 12 - dBm IP3 third-order intercept IC = 25 mA; VCE = 2 V; f = 2 GHz; point ZS = ZS(opt); ZL = ZL(opt) [2] - 22 - dBm [1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG, see Figure 8. [2] ZS is optimized for noise; ZL is optimized for gain. BFG424F_1 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 4 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 001aad818 40 IC (mA) hFE (1) 30 001aad819 120 (2) 80 (3) (1) (2) (3) (4) 20 (5) (6) 10 40 (7) (8) 0 0 0 1 2 3 4 5 0 10 20 VCE (V) 30 40 IC (mA) (1) IB = 400 µA (1) VCE = 3 V (2) IB = 350 µA (2) VCE = 2 V (3) IB = 300 µA (3) VCE = 1 V (4) IB = 250 µA (5) IB = 200 µA (6) IB = 150 µA (7) IB = 100 µA (8) IB = 50 µA Fig 2. Collector current as a function of collector-emitter voltage; typical values Fig 3. DC current gain as a function of collector current; typical values 001aad820 200 CCBS (fF) 160 120 80 40 0 0 1 2 3 4 5 VCB (V) f = 1 MHz Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 5 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 001aad821 30 fT (GHz) 001aad822 30 MSG G (dB) 20 20 s21 2 10 10 0 1 0 102 10 1 102 10 IC (mA) IC (mA) VCE = 2 V; f = 2 GHz; Tamb = 25 °C VCE = 2 V; f = 0.9 GHz; Tamb = 25 °C Fig 5. Transition frequency as a function of collector current; typical values 001aad823 30 Fig 6. Gain as a function of collector current; typical values G (dB) G (dB) Gp(max) 001aad824 45 35 MSG MSG 20 25 s21 2 s21 2 Gp(max) 15 10 5 0 1 102 10 −5 10−1 IC (mA) 102 10 f (GHz) VCE = 2 V; f = 2 GHz; Tamb = 25 °C VCE = 2 V; IC = 25 mA; Tamb = 25 °C Fig 7. Gain as a function of collector current; typical values Fig 8. Gain as a function of frequency; typical values BFG424F_1 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 6 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 90° 1.0 +1 135° +0.5 12 GHz 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 5 10 0° 0 100 MHz −5 −0.2 −135° −2 −0.5 −45° −1 1.0 −90° 001aad825 VCE = 2 V; IC = 25 mA; Zo = 50 Ω Fig 9. Common emitter input reflection coefficient (s11); typical values 90° 135° 180° 0.5 0.4 45° 0.3 0.2 0.1 0 100 MHz 0° 12 GHz −135° −45° −90° 001aad826 VCE = 2 V; IC = 25 mA Fig 10. Common emitter reverse transmission coefficient (s12); typical values BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 7 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 90° 135° 45° 100 MHz 180° 50 40 30 20 10 0 0° 12 GHz −135° −45° −90° 001aad827 VCE = 2 V; IC = 25 mA Fig 11. Common emitter forward transmission coefficient (s21); typical values 90° 1.0 +1 135° +0.5 12 GHz 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 5 10 0° 0 100 MHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 001aad828 VCE = 2 V; IC = 25 mA; Zo = 50 Ω Fig 12. Common emitter input reflection coefficient (s22); typical values BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 8 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 7.1 Noise data Table 8: Noise data VCE = 2 V; typical values. f IC NFmin Γopt (MHz) (mA) (dB) ratio (deg) (Ω) 900 1 0.7 0.67 19.1 0.40 2 0.81 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 −63.9 0.19 15 1.65 0.11 −162.4 0.18 20 1.9 0.19 −165.5 0.18 25 2.1 0.25 −166.3 0.19 30 2.3 0.29 −166.5 0.19 2000 rn 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 −162.1 0.20 20 2.2 0.17 −155.5 0.20 25 2.5 0.22 −152.2 0.21 30 2.8 0.27 −150.8 0.25 001aad829 3 NFmin (dB) 2 (1) (2) 1 0 0 10 20 30 IC (mA) (1) f = 2 GHz (2) f = 900 MHz Fig 13. Minimum noise figure as a function of collector current; typical values BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 9 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-07-12 06-03-16 SOT343F Fig 14. Package outline SOT343F BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 10 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 9. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Supersedes BFG424F_1 20060321 Product data sheet - - BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 11 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks 12. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BFG424F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 21 March 2006 12 of 13 BFG424F Philips Semiconductors NPN 25 GHz wideband transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Noise data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 21 March 2006 BFG424F_1 Published in The Netherlands