DG411L, DG412L, DG413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG411L, DG412L, DG413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411, DG412, DG413 with improved performance. • 2.7- thru 12 V single supply or ± 3- thru ± 6 dual supply • On-resistance - RDS(on): 17 • Fast switching - tON: 19 ns • tOFF: 12 ns • TTL, CMOS compatible • Low leakage: 0.25 nA • 2000 V ESD protection Using BiCMOS wafer fabrication technology allows the DG411L, DG412L, DG413L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with ± 3 to ± 6 V. Combining high speed (tON: 19 ns), flat RDS(on) over the analog signal range (5 ), minimal insertion lose (- 3 dB at 280 MHz), and excellent crosstalk and off-isolation performance (- 50 dB at 50 MHz), the DG411L, DG412L, DG413L are ideally suited for audio and video signal switching. The DG411L and DG412L respond to opposite control logic as shown in the Truth Table. The DG413L has two normally open and two normally closed switches. Available RoHS* COMPLIANT BENEFITS • • • • Widest dynamic range Low signal errors and distortion Break-before-make switching action Simple interfacinge APPLICATIONS • • • • • • • Precision automatic test equipment Precision data acquisition Communication systems Battery powered systems Computer peripherals SDSL, DSLAM Audio and video signal routing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG413L Dual-In-Line, TSSOP and SOIC DG411L, DG412L Dual-In-Line, TSSOP and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Top View TRUTH TABLE TRUTH TABLE Logic DG411L DG412L Logic SW1, SW4 0 ON OFF 0 OFF ON 1 OFF ON 1 ON OFF Logic “0” 0.8 V Logic “1” 2.4 V SW2, SW3 Logic “0” 0.8 V Logic “1” 2.4 V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 www.vishay.com 1 DG411L, DG412L, DG413L Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG411L, DG412L DG411LDY DG411LDY-E3 DG411LDY-T1 DG411LDY-T1-E3 16-Pin Narrow SOIC DG412LDY DG412LDY-E3 DG412LDY-T1 DG412LDY-T1-E3 - 40 °C to 85 °C DG411LDQ DG411LDQ-E3 DG411LDQ-T1 DG411LDQ-T1-E3 16-Pin TSSOP DG412LDQ DG412LDQ-E3 DG412LDQ-T1 DG412LDQ-T1-E3 DG413L 16-Pin Narrow SOIC DG413LDY DG413LDY-E3 DG413LDY-T1 DG413LDY-T1-E3 16-Pin TSSOP DG413LDQ DG413LDQ-E3 DG413LDQ-T1 DG413LDQ-T1-E3 - 40 °C to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter Limit V+ to VGND to VVL - 0.3 to 13 7 (GND - 0.3) to (V+) + 0.3 - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first 30 INa, VS, VD Continuous Current (Any terminal) Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Packages) Unit b 100 (DQ, DY Suffix) - 65 to 125 (AK Suffix) - 65 to 150 16-Pin TSSOPc 450 16-Pin SOICd 650 16-Pin CerDIPe 900 V mA °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 7 mW/°C above 75 °C d. Derate 7.6 mW/°C above 75 °C e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 DG411L, DG412L, DG413L Vishay Siliconix SPECIFICATIONSa (Single Supply 12 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b V+ = 10.8 V, V- = 0 V IS = 10 mA, VD = 2/9 V Room Full A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit 0 12 0 12 V 30 40 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) Full IS(off) Switch Off Leakage Current VD = 1/11 V, VS = 11/1 V ID(off) Channel On Leakage Current 20 30 45 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 ID(on) VS = VD = 11/1 V Input Current, VIN Low IIL VIN under test = 0.8 V Full Input Current, VIN High IIH VIN under test = 2.4 V Full Turn-On Time tON Turn-Off Time tOFF RL = 300 , CL = 35 pF VS = 5 V, see figure 2 nA Digital Control 0.01 - 1.5 1.5 -1 1 - 1.5 1.5 -1 1 µA Dynamic Characteristics Break-Before-Make Time Delay Charge Injectione Room Full 20 50 70 50 60 Room Full 12 30 48 30 40 6 tD DG413L only, VS = 5 V RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 5 Room 71 Room 95 Room 5 Off-Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel-On Capacitancee RL = 50 , CL = 5 pF , f = 1 MHz f = 1 MHz Room 6 CD(on) Room 15 Positive Supply Current I+ Room Full 0.02 Negative Supply Current I- Room Full - 0.002 Logic Supply Current IL Room Full 0.002 IGND Room Full - 0.002 ns pC dB pF Power Supplies VIN = 0 or 5 V Ground Current 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 www.vishay.com 3 DG411L, DG412L, DG413L Vishay Siliconix SPECIFICATIONSa (Dual Supply ± 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b V+ = 5 V, V- = - 5 V IS = 10 mA, VD = ± 3.5 V Room Full A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Ty.pc Min.d Max.d Min.d 5 -5 Max.d Unit 5 V 33 40 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg VANALOG RDS(on) IS(off) ID(off) Full V+ = 5.5 , V- = - 5.5 V VD = ± 4.5 V, VS = ± 4.5 V -5 20 33 45 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 ID(on) V+ = 5.5 V, V- = - 5.5 V VS = VD = ± 4.5 V Room Full Input Current, VIN Lowe IIL VIN under test = 0.8 V Full 0.05 - 1.5 1.5 -1 1 Input Current, VIN Highe IIH VIN under test = 2.4 V Full 0.05 - 1.5 1.5 -1 1 Turn-On Timee tON Room Full 21 50 70 50 60 Turn-Off Timee tOFF RL = 300 , CL = 35 pF VS = ± 3.5 V, see figure 2 Room Full 16 35 50 35 40 6 Channel On Leakage Currentg nA Digital Control µA Dynamic Characteristics Break-Before-Make Time Delaye Charge Injectione tD DG413L only, VS = 3.5 V RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 5 Room 68 Room 85 Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee RL = 50 , CL = 5 pF , f = 1 MHz Room 9 Room 9 CD(on) Room 20 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- Room Full - 0.002 Logic Supply Currente IL Room Full 0.002 IGND Room Full - 0.002 f = 1 MHz ns pC dB pF Power Supplies Ground Currente VIN = 0 or 5 V 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. www.vishay.com 4 Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 DG411L, DG412L, DG413L Vishay Siliconix SPECIFICATIONSa (Single Supply 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b V+ = 4.5 V IS = 5 mA, VD = 1 V, 3.5 V Room Full 35 Room Hot 27 50 90 50 60 Room Hot 15 30 55 30 40 A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit 5 5 V 50 88 50 75 Analog Switch Analog Signal Rangee Drain-Source On-Resistancee VANALOG RDS(on) Full Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF RL = 300 , CL = 35 pF VS = 3.5 V, see figure 2 Break-Before-Make Time Delaye tD DG413L only, VS = 3.5 V RL = 300 , CL = 35 pF Room 6 Charge Injectione Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 0.5 ns pC Power Supplies Positive Supply Currente I+ Room Hot 0.02 Negative Supply Currente I- Room Hot - 0.002 Logic Supply Currente IL Room Hot 0.002 IGND Room Hot - 0.002 Ground Currente VIN = 0 or 5 V 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 www.vishay.com 5 DG411L, DG412L, DG413L Vishay Siliconix SPECIFICATIONSa (Single Supply 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VL = 3 V, VIN = 0.4 Vf Temp.b V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V Room Full A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d 3 0 Max.d Unit 3 V 80 100 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg VANALOG RDS(on) IS(off) ID(off) Full V+ = 3.3 , V- = 0 V VD = 1, 2 V, VS = 2, 1 V 0 65 80 115 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 ID(on) V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V Room Full Input Current, VIN Low IIL VIN under test = 0.4 V Full 0.005 - 1.5 1.5 -1 1 Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 1.5 1.5 -1 1 Turn-On Time tON Room Full 50 85 150 85 110 Turn-Off Time tOFF RL = 300 , CL = 35 pF VS = 1.5 V, see figure 2 Room Full 30 60 100 60 85 6 Channel On Leakage Currentg nA Digital Control µA Dynamic Characteristics Break-Before-Make Time Delay Charge Injectione tD DG413L only, VS = 1.5 V RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 1 Room 68 Room 85 Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) RL = 50 , CL = 5 pF , f = 1 MHz f = 1 MHz Room 6 Room 6 Room 20 ns pC dB pF Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 6 Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 DG411L, DG412L, DG413L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 50 80 R DS(on) - On-Resistance (Ω) R DS(on) - On-Resistance () V+ = 5 V V- = 0 V VCC = 2.7 V 60 40 VCC = 4.5 V VCC = 12 V 20 40 A B 30 C D 20 A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 10 0 0 0 3 6 9 12 0 1 2 Drain Voltage (V) 3 4 5 Drain Voltage (V) RDS(on) vs. Drain Voltage and Temperature (Single Supply) RDS(on) vs. Drain Voltage (Single Supply) 35 0.30 V+ = 5 V V- = 0 V V± = ± 5 V 0.25 28 Supply Current (nA) R DS(on) - On-Resistance (Ω) E 21 14 A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 7 -3 0.15 0.10 0.05 0 -5 0.20 -1 1 3 0.00 - 50 5 - 25 0 25 50 75 100 125 Drain Voltage (V) Temperature (°C) RDS(on) vs. Drain Voltage and Temperature (Dual Supply) Supply Current vs. Temperature 30 150 50 V+ = 5 V V- = - 5 V 40 Switching Speed (nS) I S , I D Leakage Current (pA) 20 10 ID(on) 0 ID(off) IS(off) - 10 30 20 tOFF 10 - 20 - 30 -5 tON 0 -3 -1 1 3 5 VD or V S - Drain-Source Voltage Leakage Current vs. Analog Voltage (Dual Supply) Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 0 3 6 9 12 15 V+ - Positive Supply Voltage (V) Switching Time vs. Single Supply www.vishay.com 7 DG411L, DG412L, DG413L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 45 6 4 27 Charge Injection (Q) Switching Speed (nS) 36 tON tOFF 18 VSUPPLY = ± 5 V 2 VSUPPLY = 3 V 0 9 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -2 -5 6.5 -3 -1 V± Positive Supply Voltage (V) Switching Time vs. Dual Supply 3 5 Charge Injection vs. Drain Voltage 1.8 7 1.5 6 Capacitance (pF) VTH - Threshold (V) 1 Drain Voltage (V) 1.2 0.9 0.6 CD(off) at VCC = 5 V CD(off) at VCC = 12 V 5 CD(off) at VCC = 3 V 4 3 2 0.3 1 0.0 0 0 2 4 6 8 10 12 14 0 3 V ± Positive Supply Voltage (V) 6 9 12 VD - Drain Voltage (V) Input Threshold vs. Single Supply Voltage Drain Capacitance vs. Drain Voltage (Single Supply) 25 10 VSUPPLY = ± 5 V - 30 15 Loss (dB) Capacitance (pF) - 10 CD(on) 20 10 - 50 V+ = 3 V V- = 0 V RL = 50 Ω Insertion Loss - 3 dB = 280 MHz Off Isolation - 70 Crosstalk CS/CD(off) 5 - 90 0 -5 - 110 -3 -1 1 3 Analog Voltage (V) Capacitance vs. Analog Signal (Dual Supply) www.vishay.com 8 5 0.1 1 10 100 1000 Frequency (MHz) Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply) Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 DG411L, DG412L, DG413L Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS VL V+ Logic Input tr < 20 ns tf < 20 ns 3V 50% 0V VL VS V+ S tON D Switch Input* VO VS VO 90 % IN RL 300 Ω V- GND CL 35 pF Switch Output Switch Input* V- 0V tON 90 % VO - VS CL (includes fixture and stray capacitance) RL VO = V S Note: RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time VL V+ Logic Input VS1 S1 D1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 50 % 0V VS1 VO1 VO1 IN1 3V RL2 300 Ω CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V 90 % tD tD VCL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413L) Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 www.vishay.com 9 DG411L, DG412L, DG413L Vishay Siliconix TEST CIRCUITS VL ΔVO V+ VO VL Rg V+ S INX D IN Vg OFF VO ON OFF CL 10 nF 3V GND VINX V- OFF ON Q = ΔVO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. Figure 4. Charge Injection VL V+ C C VL V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VS VO V- C = RF bypass Figure 5. Crosstalk VL V+ C VL C VO D VL Rg = 50 Ω 0 V, 2.4 V V+ C V+ S VS VL C V+ S RL 50 Ω IN Meter IN GND V- HP4192A Impedance Analyzer or Equivalent C 0 V, 2.4 V D VOff Isolation = 20 log GND V- C VS VO C = RF Bypass Figure 6. Off-Isolation V- Figure 7. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71397. www.vishay.com 10 Document Number: 71397 S11-0179-Rev. F, 07-Feb-11 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1