Rohm DTA043TUB 100ma/-50v digital transistors(with built-in resistors) Datasheet

-100mA/-50V Digital transistors(with built-in resistors)
DTA043TM / DTA043TEB / DTA043TUB
Dimensions (Unit : mm)
Features
1) Built-in input resistor enables the direct control of base terminal
by input voltage without external resistor.
(See Inner circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 39
EMT3F
(3)
(1)
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
(2)
Abbreviated symbol : 39
UMT3F
2.0
0.9
0.53
(1)
0.53
0.425
Applications
Inverter, Interface, Driver
(3)
1.25
2.1
0.425
0.32
(2)
0.13
0.65 0.65
1.3
Abbreviated symbol : 39
Packaging specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTA043TM
DTA043TEB
DTA043TUB
Inner circuit
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
8000
3000
3000
○
-
○
-
○
C
R1
B
B : Base
C : Collector
E : Emitter
E
R1=4.7kΩ
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Limits(DTA043T□)
M
VCBO
VCEO
VEBO
IC(max)
PD
Tj
Tstg
EB
UB
-50
-50
-5
-100
150
200
150
-55 to +150
Unit
V
V
mA
mA
mW *
C
C
* Each terminal mounted on a recommended land
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©2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.09 - Rev.A
Data Sheet
DTA043TM / DTA043TEB / DTA043TUB
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Collector-Base breakdown voltage
BVCBO
-50
-
-
V
Collector-Emitter breakdown voltage
BVCEO
-50
-
-
V
IC=-1mA
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-Emitter saturation voltage
DC current gain
Max.
Test Conditions
Unit
IC=-50uA
BVCEO
-5
-
-
V
IE=-50uA
ICBO
-
-
-500
nA
VCB=-50V
IEBO
-
-
-500
nA
VEB=-4V
VCE(sat)
-
-0.07
-0.15
V
IC=-5mA / IB=-0.5mA
hFE
100
-
600
-
VCE=-10V / IC=-0.5mA
Transition frequency *
fT
-
250
-
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
VCE=-10V / IC=-5mA
f=100MHz
* Characteristics of built-in transistor
Electrical characteristics curves
-1
1000
100
COLLECTOR SATURATION VOLTAGE :
VCE(sat) (V)
DC CURRENT GAIN : hFE
VCE=-10.0V
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-40℃
10
1
-0.1
-1
-10
COLLECTOR CURRENT : IC (mA)
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©2010 ROHM Co., Ltd. All rights reserved.
-0.1
-0.01
-0.001
-0.1
-100
Fig.1 DC Current Gain vs. Collector Current
IC/IB=10
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-40℃
-1
-10
-100
COLLECTOR CURRNET : IC (mA)
Fig.2 Collector Saturation Voltage vs. Collector Current
2/2
2010.09 - Rev.A
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Notes
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R1010A
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