-100mA/-50V Digital transistors(with built-in resistors) DTA043TM / DTA043TEB / DTA043TUB Dimensions (Unit : mm) Features 1) Built-in input resistor enables the direct control of base terminal by input voltage without external resistor. (See Inner circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. VMT3 Abbreviated symbol : 39 EMT3F (3) (1) Structure PNP epitaxial planar silicon transistor (Resistor built-in type) (2) Abbreviated symbol : 39 UMT3F 2.0 0.9 0.53 (1) 0.53 0.425 Applications Inverter, Interface, Driver (3) 1.25 2.1 0.425 0.32 (2) 0.13 0.65 0.65 1.3 Abbreviated symbol : 39 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTA043ＴM DTA043ＴEB DTA043ＴUB Inner circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - ○ - ○ C R1 B B : Base C : Collector E : Emitter E R1=4.7kΩ Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol Limits(DTA043T□) M VCBO VCEO VEBO IC(max) PD Tｊ Tstg EB UB -50 -50 -5 -100 150 200 150 -55 to +150 Unit V V mA mA mW * C C * Each terminal mounted on a recommended land www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.09 - Rev.A Data Sheet DTA043TM / DTA043TEB / DTA043TUB Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Collector-Base breakdown voltage BVCBO -50 - - V Collector-Emitter breakdown voltage BVCEO -50 - - V IC=-1mA Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current Collector-Emitter saturation voltage DC current gain Max. Test Conditions Unit IC=-50uA BVCEO -5 - - V IE=-50uA ICBO - - -500 nA VCB=-50V IEBO - - -500 nA VEB=-4V VCE(sat) - -0.07 -0.15 V IC=-5mA / IB=-0.5mA hFE 100 - 600 - VCE=-10V / IC=-0.5mA Transition frequency * fT - 250 - MHz Input resistance R1 3.29 4.7 6.11 kΩ VCE=-10V / IC=-5mA f=100MHz * Characteristics of built-in transistor Electrical characteristics curves -1 1000 100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE VCE=-10.0V Ta=125℃ Ta=75℃ Ta=25℃ Ta=-40℃ 10 1 -0.1 -1 -10 COLLECTOR CURRENT : IC (mA) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. -0.1 -0.01 -0.001 -0.1 -100 Fig.1 DC Current Gain vs. Collector Current IC/IB=10 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-40℃ -1 -10 -100 COLLECTOR CURRNET : IC (mA) Fig.2 Collector Saturation Voltage vs. Collector Current 2/2 2010.09 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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