Wideband Multifunction Reception System GaAs MMIC Completely Covers GPS and CDMA CXG1100TN CXG1115ER The gpsOne system is seen as a revolutionary technology for the next generation of position information services. The gpsOne system uses information from GPS satellites and the CDMA network to complement each other and acquire reliable positioning information. (See figure 1.) CXG1100TN A position information service that uses gpsOne cellular phones is scheduled to start service this fall in Japan. Sony has now developed a chip set that responds to the needs of this market. The CXG1100TN is a wideband DPDT switch, and the CXG1115ER is a dual-mode front-end IC. These devices adopt Sony’s unique JFET process and mounting technologies to achieve high functionality and miniaturization. CXG1115ER CXG1100TN DPDT Switch Switching Can Be Controlled from CMOS Lines The CXG1100TN is a DPDT*1 antenna switch MMIC. While conventional single band systems use a SPDT* 2 switch, the CXG1100TN supports dualband systems with DPDT operation. In this device, Sony integrated logic circuits on the same chip by using Sony’s unique GaAs JFET E/D hybrid process. This device can be directly controlled from CMOS control lines. Since the CXG1100TN covers the wide bandwidth of up to 3 GHz, it is optimal O I C Switching can be controlled from CMOS lines ■ Wide bandwidth, low insertion loss, and low distortion ■ Provided in an ultraminiature package ■ Dual band support ■ Circuit area reduced by the adoption of 2× frequency multiplier technology ■ High gain, low noise, low distortion ■ Provided in an ultraminiature package for switching between two bands in the quasi-microwave band. Furthermore, it achieves a low insertion loss and low distortion by adopting a Sony JFET process that features single positive supply voltage operation. (See table 1.) mixer block, the CXG1115ER is able to share a single LO circuit between two systems. This reduces the circuit area, and in addition to reducing costs, allows a smaller package to be used providing greater liberty in PWB mounting design. CXG1115ER Low-Noise Amplifier/Mixer The CXG1115ER is a gpsOne lownoise amplifier and downconversion mixer IC that uses Sony’s GaAs JFET process. Dual Band Support Wide Bandwidth, Low Insertion Loss, and Low Distortion V ■ E Our duty as chip designers is to provide the market with ICs with distinctive features and high performance in a timely manner and at a low price. The chip set introduced here is a product that meets all of these conditions, and we are sure that our customers will find it more than satisfactory. The CXG1115ER receiver IC provides a bypass switch in the CDMA system low-noise amplifier block, can switch gain appropriately for strong, medium, and weak electric field reception conditions, and furthermore provides a lowcurrent mode for standby operation. It consists of two circuit systems, one for the 850 MHz band CDMA system and one for the 1575 MHz band GPS system, and fully supports both CDMA and GPS by providing a control switch. Circuit Area Reduced by the Adoption of 2× Frequency Multiplier Technology By doubling the frequency of the LO input signal from the LO input (740 MHz) to 1480 MHz in the GPS system High Gain, Low Noise, Low Distortion One feature of the CXG1115ER is that it achieves a good balance between high gain, low noise, and low distortion. (See figure 3.) Additionally, it also provides a medium-gain mode to further improve distortion characteristics and a low power mode to conserve power. Applications can easily obtain desired characteristics by controlling the control switching inputs. Provided in Ultraminiature Packages The CXG1100TN is provided in a 10pin TSSOP (3.2 × 2.8 mm) package, and the CXG1115ER is provided in a 24pin VQFN (4.0 × 4.0 mm) package. These ultraminiature packages allow the mounting area to be reduced significantly. *1 DPDT: Dual Pole Dual Throw *2 SPDT: Singlel Pole Dual Throw Dual-band antenna TX block IF block GPS statellite CXG1100TN Dplx CDMA RX GPS RX ×2 CXG1115ER Ext. CDMA base station IF block CDMA Mixer Representative Characteristics 1 GPS LNA Representative Characteristics Power Gain and Noise Figure vs. RF Frequency Conversion Gain and Noise Figure vs. RF Frequency 13 15 fLO = fRF – 110 MHz 12 14 LOin = –10 dBm 11 13 Gc 10 12 Power Gain and Noise Figure vs. RF Frequency 3 11 10 2 NF 9 8 1 7 6 800 820 840 860 880 fRF – RF frequency [MHz] 11 9 10 8 9 7 CDMA LNA Representative Characteristics 2 5 6 4 20 10 10 0 POUT – RF output power [dBm] Pout –10 –20 –30 –40 –60 –70 –80 –40 IM3 16 3 15 14 2 NF 13 12 1 11 10 12 Gc 9 11 8 10 7 9 6 8 5 7 4 NF 3 2 fLO = 1/2 × (fRF – 110 MHz) LOin = –10 dBm 6 5 4 3 1 1525 1545 1565 1585 1605 1625 fRF – RF frequency [MHz] 10 0 1525 1545 1565 1585 1605 1625 fRF – RF frequency [MHz] ■ Table 1 (Ta Symbol –10 Insertion loss –20 –30 Isolation –40 –50 –70 10 –80 –40 CXG1100TN Representative Electrical Characteristics Pout IM3 Harmonics Input IP3 fRF1 = 850 MHz fRF2 = 850.9 MHz fLO = 740 MHz LOin = –10 dBm –30 –20 –10 0 Pin – RF input power [dBm] 10 ■ Figure 3 CXG1115ER Representative Characteristics 25°C) Condition Typ. Unit 900 MHz 0.35 dB 1.58 GHz 0.46 dB 900 MHz 22 dB 1.58 GHz 17.2 dB VSWR 50 Ω 1.2 — 2fo *1 –75 dBc 3fo *1 –75 dBc IIP3 *2 60 dBm IL ISO. VSWR –60 fRF1 = 850 MHz fRF2 = 850.9 MHz –30 –20 –10 0 Pin – RF input power [dBm] 17 4 Gp Output Power and IM3 vs. Input Power 20 –50 820 840 860 880 fRF – RF frequency [MHz] 3 900 18 CDMA Mixer Representative Characteristics 2 Output Power and IM3 vs. Input Power 0 6 7 5 800 0 900 NF 8 19 NF – Noise figure [dB] 12 Gc – Conversion gain [dB] 13 Conversion Gain and Noise Figure vs. RF Frequency 13 11 5 20 NF – Noise figure [dB] 4 NF – Noise figure [dB] 14 Gc – Conversion gain [dB] Gp – Power gain [dB] 15 5 Gp GPS Mixer Representative Characteristics NF – Noise figure [dB] CDMA LNA Representative Characteristics 1 16 POUT – RF output power [dBm] ■ Figure 2 CXG1100TN/CXG1115ER Application Circuit Gc – Conversion gain [dB] ■ Figure 1 Next-Generation Global Positioning Information Service *1: Pin = 24 dBm, 0/3 V control, VDD = 3.0 V, 900 MHz *2: Pin = 24 dBm (900 MHz) + 24 dBm (901 MHz), 0/3 V control, VDD = 3.0 V