HDSEMI BAV23C Sot-23 plastic-encapsulate diode Datasheet

BAV23A/C/S
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
SOT- 23
● Fast Switching Speed
● High Conductance
● For General Purpose Switching Applications
3
Marking:
2
BAV23A
MARKING:KT7
BAV23S
BAV23C
MARKING KT6
1
MARKING:KL31
Symbol
Parameter
Value
Unit
250
V
RMS Reverse Voltage
175
V
Average Rectified Output Current
225
mA
IFSM
Non-repetitive Peak Forward Surge Current @ t= 8.3ms
1.7
A
PD
Power Dissipation
350
mW
Thermal Resistance from Junction to Ambient
357
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR(RMS)
IO
RΘJA
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Reverse voltage
V(BR)
IR=100μA
Reverse current
IR
VR=250V
0.1
Forward voltage
VF
IF=100mA
1
IF=200mA
1.25
Total capacitance
Ctot
Reverse recovery time
trr
250
Unit
V
μA
V
VR=0V,f=1MHz
5
pF
IF= IR=30mA, Irr=0.1×IR, RL=100Ω
50
ns
High Diode Semiconductor
1
Typical Characteristics
Forward
Characteristics
Characteristics
Reverse
1000
300
Pulsed
Pulsed
(nA)
(mA)
100
REVERSE CURRENT IR
℃
T=
a 2
5
FORWARD CURRENT
T=
a 1
00
℃
IF
10
1
0.1
0.01
0.2
Ta=100℃
100
10
Ta=25℃
1
0.4
0.6
0.8
FORWARD VOLTAGE
1.0
VF
0
1.2
50
(V)
100
150
REVERSE VOLTAGE
200
250
(V)
VR
Power Derating Curve
Capacitance Characteristics
1.6
400
(mW)
f=1MHz
350
300
PD
1.4
1.2
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
1.0
0.8
0.6
250
200
150
100
50
0
0
4
8
12
REVERSE VOLTAGE
16
VR
(V)
20
0
25
50
75
100
AMBIENT TEMPERATURE
High Diode Semiconductor
125
Ta
150
(℃)
2
SOT-23
Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
3
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
High Diode Semiconductor
4
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