This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E2 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Features Package Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package DSC2G03 + CCD load device (Individual) Code SSMini6-F3-B Pin Name 1: Emitter 2: Base 3: Gate Packaging Marking Symbol: X1 Basic Part Number Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) Internal Connection Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V IC 50 mA Vmax 40 V Imax 10 mA PT 125 mW Tj 150 °C Tstg –55 to +150 °C Collector current CCD Limiting element voltage load device Limiting element current Total power dissipation * Overall Junction temperature Storage temperature 4: Source 5: Drain 6: Collector (C) 6 (S) 4 (D) 5 FET Tr 1 (E) 2 (B) 3 (G) Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 30 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V Base-emitter voltage VBE VCE = 10 V, IC = 2 mA Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA Transition frequency fT VCE = 10 V, IC = 15 mA 750 100 mV 250 1 300 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement CCD load device Parameter Symbol Conditions Pinchi off current IP VDS = 8 V, VG = 0 Output impedance ZO VDS = 8 V, VG = 0 Min Typ 5.0 0.02 Max Unit 7.0 mA mW Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2010 Ver. BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E2 Common characteristics chart DMS935E2_PT-Ta PT Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr DMS935E2(Tr1)_IC-VCE DMS935E2(Tr1)_hFE-IC 550 µA 450 µA 350 µA 650 µA 750 µA 850 µA 40 IB = 950 µA 250 µA 30 150 µA 20 10 0 50 µA 0 2 4 6 8 10 Forward current transfer ratio hFE Ta = 25°C 50 Collector current IC (mA) 500 VCE = 10 V 400 300 Ta = 85°C 200 25°C −30°C 100 0 10−1 12 Collector-emitter voltage VCE (V) 40 Ta = 85°C 25°C 20 −30°C 10 0.8 Base-emitter voltage VBE (V) 2 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector current IC (mA) VO = 10 V 0.4 102 Ta = 85°C 10−1 −30°C 25°C 10−2 10−1 1 3.0 102 DMS935E2(Tr1)_fT-IC fT IC IE = 0 f = 1 MHz Ta = 25°C 2.5 10 Collector current IC (mA) Cob VCB 50 0 10 1 DMS935E2(Tr1)_Cob-VCB IC VBE 0 1 IC / IB = 30 Collector current IC (mA) DMS935E2(Tr1)_IC-VBE 30 VCE(sat) IC 10 2 000 Transition frequency fT (MHz) 60 DMS935E2(Tr1)_VCEsat-IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE VCE = 10 V Ta = 25°C 1 500 2.0 1.5 1 000 1.0 0.5 0 1 10 100 Collector-base voltage VCB (V) Ver. BED 500 0 10−1 1 10 Collector current IC (mA) 102 This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E2 Characteristics charts of CCD DMS935E2(CCD)_IP-VDS IP VDS Pinchi off current IP (mA) 8 Ta = 25°C 6 4 2 0 0 5 10 15 20 25 30 Drain-source voltage VDS (V) Ver. BED 3 This product complies with the RoHS Directive (EU 2002/95/EC). DMS935E2 SSMini6-F3-B Unit: mm 0.20 ±0.05 1.60 ±0.05 +0.05 5 4 1 2 3 (5°) 1.20 ±0.05 6 1.60 ±0.05 0.20 −0.02 (0.5) +0.05 0.13 −0.02 (0.5) (0.27) 1.00 ±0.05 0 to 0.05 0.55 ±0.05 (5°) 4 Ver. BED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202