Panasonic DMS935E2 Silicon npn epitaxial planar type Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
 Features
 Package
 Two elements incorporated into one package (Tr + CCD load device)
 High transition frequency fT
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
DSC2G03 + CCD load device (Individual)
 Code
SSMini6-F3-B
 Pin Name
1: Emitter
2: Base
3: Gate
 Packaging
 Marking Symbol: X1
 Basic Part Number
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
 Internal Connection
 Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3
V
IC
50
mA
Vmax
40
V
Imax
10
mA
PT
125
mW
Tj
150
°C
Tstg
–55 to +150
°C
Collector current
CCD Limiting element voltage
load device Limiting element current
Total power dissipation *
Overall Junction temperature
Storage temperature
4: Source
5: Drain
6: Collector
(C)
6
(S)
4
(D)
5
FET
Tr
1
(E)
2
(B)
3
(G)
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
 Electrical Characteristics Ta = 25°C±3°C
 Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 100 µA, IE = 0
30
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
3
V
Base-emitter voltage
VBE
VCE = 10 V, IC = 2 mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 2 mA
Transition frequency
fT
VCE = 10 V, IC = 15 mA
750
100
mV
250
1 300

MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
 CCD load device
Parameter
Symbol
Conditions
Pinchi off current
IP
VDS = 8 V, VG = 0
Output impedance
ZO
VDS = 8 V, VG = 0
Min
Typ
5.0
0.02
Max
Unit
7.0
mA
mW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2010
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Common characteristics
chart
DMS935E2_PT-Ta
PT  Ta
Total power dissipation PT (mW)
150
125
100
75
50
25
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
Characteristics
charts of Tr
DMS935E2(Tr1)_IC-VCE
DMS935E2(Tr1)_hFE-IC
550 µA 450 µA
350 µA
650 µA
750 µA
850 µA
40 IB = 950 µA
250 µA
30
150 µA
20
10
0
50 µA
0
2
4
6
8
10
Forward current transfer ratio hFE
Ta = 25°C
50
Collector current IC (mA)
500
VCE = 10 V
400
300
Ta = 85°C
200
25°C
−30°C
100
0
10−1
12
Collector-emitter voltage VCE (V)
40
Ta = 85°C
25°C
20
−30°C
10
0.8
Base-emitter voltage VBE (V)
2
1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector current IC (mA)
VO = 10 V
0.4
102
Ta = 85°C
10−1
−30°C
25°C
10−2
10−1
1
3.0
102
DMS935E2(Tr1)_fT-IC
fT  IC
IE = 0
f = 1 MHz
Ta = 25°C
2.5
10
Collector current IC (mA)
Cob  VCB
50
0
10
1
DMS935E2(Tr1)_Cob-VCB
IC  VBE
0
1
IC / IB = 30
Collector current IC (mA)
DMS935E2(Tr1)_IC-VBE
30
VCE(sat)  IC
10
2 000
Transition frequency fT (MHz)
60
DMS935E2(Tr1)_VCEsat-IC
hFE  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
VCE = 10 V
Ta = 25°C
1 500
2.0
1.5
1 000
1.0
0.5
0
1
10
100
Collector-base voltage VCB (V)
Ver. BED
500
0
10−1
1
10
Collector current IC (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Characteristics
charts of CCD
DMS935E2(CCD)_IP-VDS
IP  VDS
Pinchi off current IP (mA)
8
Ta = 25°C
6
4
2
0
0
5
10
15
20
25
30
Drain-source voltage VDS (V)
Ver. BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
SSMini6-F3-B
Unit: mm
0.20 ±0.05
1.60 ±0.05
+0.05
5
4
1
2
3
(5°)
1.20 ±0.05
6
1.60 ±0.05
0.20 −0.02
(0.5)
+0.05
0.13 −0.02
(0.5)
(0.27)
1.00 ±0.05
0 to 0.05
0.55 ±0.05
(5°)
4
Ver. BED
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