isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96 APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDT91 60 BDT93 80 BDT95 100 BDT91 60 BDT93 80 BDT95 100 UNIT V V Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT91 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT93 MIN TYP. MAX UNIT 60 IC= 100mA ; IB= 0 V 80 100 BDT95 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 3 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.6 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB=1/2VCBOmax; IE= 0,TJ=150℃ 0.1 5 mA ICEO Collector Cutoff Current VCE= VCEOmax V; IB= 0 1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5 Current-Gain—Bandwidth Product IC= 500mA ; VCE= 10V 4 fT B 200 MHz Switching times ton Turn-On Time 0.5 1 μs 2 4 μs IC= 4A; IB1= -IB2= 0.4A toff Turn-Off Time isc Website：www.iscsemi.cn 2