TOSHIBA 2SA1971_09

2SA1971
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SA1971
High-Voltage Switching Applications
•
Unit: mm
High breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−400
V
Collector-emitter voltage
VCEO
−400
V
Emitter-base voltage
VEBO
−7
V
DC
IC
−0.5
Pulse
ICP
−1
IB
−0.25
Collector current
Base current
Ta = 25°C
Collector power
dissipation
Ta = 25°C
Storage temperature range
A
500
PC
(Note 1)
Junction temperature
A
1000
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate 250 mm2 × 0.8 t
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2SA1971
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −400 V, IE = 0
―
―
−10
μA
Emitter cut-off current
IEBO
VEB = −7 V, IC = 0
―
―
−1
μA
V (BR) CEO
IC = −10 mA, IB = 0
−400
―
―
V
Collector-emitter breakdown voltage
hFE (1)
VCE = −5 V, IC = −20 mA
140
―
450
hFE (2)
VCE = −5 V, IC = −100 mA
140
―
400
Collector-emitter saturation voltage
VCE (sat)
IC = −100 mA, IB = −10 mA
―
−0.4
−1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = −100 mA, IB = −10 mA
―
−0.76
−0.9
V
VCE = −5 V, IC = −50 mA
―
35
―
MHz
VCB = −10 V, IE = 0, f = 1 MHz
―
18
―
pF
―
0.2
―
―
2.3
―
―
0.2
―
Collector output capacitance
Cob
Turn-on time
Switching time
Storage time
ton
tstg
20 μs
Part No.
IB1
Output
IB2
2 kΩ
fT
IB2
Transition frequency
IB1
DC current gain
μs
VCC = −200 V
Fall time
tf
IB1 = 10 mA, IB2 = 20 mA,
duty cycle ≤ 1%
Marking
Part No. (or abbreviation code)
A
L
Note 3
Lot No.
Note 3: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SA1971
IC – VCE
IC – VBE
−500
−500
−40
−20
−10
Common emitter
VCE = −5 V
−5
−80
(mA)
−400
−60
−2
Collector current IC
Collector current IC
(mA)
−100
−300
−1
VCC
IB = −0.5 mA
−100
−400
−300
−200
Ta = 100°C
25
−55
−100
Common emitter
Ta = 25°C
0
0
−2
−4
−6
−8
0
0
−10 −12 −14 −16 −18 −20
Collector-emitter voltage VCE (V)
−0.2
−0.4
hFE – IC
−1
−1.2
VBE (V)
VCE (sat) – IC
−30
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
500
100
300
DC current gain hFE
−0.8
Collector-emitter voltage
1000
25
Ta = −55°C
100
50
30
10
Common emitter
5
−0.6
VCE = −5 V
3
−1
−10
IC/IB = 10
−5
−3
−1
−0.5
25
−0.3
100
−0.1
Ta = −55°C
−0.05
−10
−100
Collector current IC
−0.03
−1
−1000
−10
(mA)
−100
−1000
Collector current IC
(mA)
Safe Operating Area
−3000
300 μs*
−1000
IC max (pulsed)*
100 μs*
(mA)
IC max (continuous)
VBE (sat) – IC
−300
Collector current IC
Base-emitter saturation voltage
VBE (sat) (V)
−10
Common emitter
−5
IC/IB = 10
−3
−1
−55
−0.3
−0.1
−1
1 ms*
−30
−3
Collector current IC
−100
−1
−1
−500
(mA)
DC operation
Ta = 25°C
250 mm2 × 0.8 t
Mounted on a
ceramic substrate
−10
25
−10
10 ms*
−100
−0.5
Ta = 100°C
10 μs*
100 ms*
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−3
−10
VCEO max
−30
−100
−300
−1000
Collector-emitter voltage VCE (V)
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2SA1971
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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