Analog Power AMCC530C N & P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 -30 Typical Applications: • DC/DC Conversion • Motor Drives PRODUCT SUMMARY rDS(on) (mΩ) 50 @ VGS = 10V 83 @ VGS = 4.5V 72 @ VGS = -10V 105 @ VGS = -4.5V DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 TA=25°C 5.8 -4.9 ID Continuous Drain Current a TA=70°C 4.2 -3.5 b IDM Pulsed Drain Current 30 -30 a I 3.2 -2.8 Continuous Source Current (Diode Conduction) S T =25°C 2.5 2.5 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a ID (A) 5.8 4.5 -4.9 -4.0 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 83 RθJA 120 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V (N-ch) VDS = -24 V, VGS = 0 V (P-ch) (N-ch) DS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 4.6 A (N-ch) VGS = 4.5 V, ID = 3.7 A (N-ch) VGS = -10 V, ID = -3.8 A (P-ch) VGS = -4.5 V, ID = -3.1 A (P-ch) VDS = 15 V, ID = 4.6 A (N-ch) VDS = -15 V, ID = -3.8 A (P-ch) IS = 1.6 A, VGS = 0 V (N-ch) IS = -1.4 A, VGS = 0 V (P-ch) Dynamic b N - Channel VDS = 15 V, VGS = 4.5 V, ID = 4.6 A N - Channel VDS = 15 V, RL = 3.3 Ω, ID = 4.6 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -15 V, VGS = -4.5 V, ID = -3.8 A P - Channel VDS = -15 V, RL = 4 Ω, ID = -3.8 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 Min Typ Max 1 -1 ±100 1 -1 7.5 -7.5 Unit V V nA uA A A 50 83 72 105 9 8 0.78 -0.83 4.4 1.1 2.2 3 11 17 5 360 56 46 4.4 0.7 2.6 4 20 19 10 467 73 58 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C Typical Electrical Characteristics - N-channel 20 0.1 3V 0.08 0.06 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3.5V 0.04 4V,4.5V,6V,8V,10V 0.02 15 10 5 0 0 0 2 4 6 8 0 10 1 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 3 4 100 TJ = 25°C ID = 4.6A TJ = 25°C IS - Source Current (A) 0.15 0.1 0.05 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 600 F = 1MHz 10V,8V,6V,4.5V,4V 500 6 Capacitance (pf) 8 ID - Drain Current (A) 5 2. Transfer Characteristics 0.2 RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 3.5V 3V 4 2 Ciss 400 300 200 Coss 100 Crss 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C Typical Electrical Characteristics - N-channel 2 VDS = 15V ID = 4.6A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 1.5 1 0.5 0 2 4 6 8 10 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 0.05 0.02 Single Pulse RθJA = 120 °C /W P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C 0.25 10 0.2 8 TJ = 25°C ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - P-channel 3.5V 0.15 4V 0.1 4.5V,6V,8V,10V 0.05 6 4 2 0 0 0 1 2 3 4 ID-Drain Current (A) 0 5 1 1. On-Resistance vs. Drain Current 4 5 10 TJ = 25°C ID = -3.8A TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 0.3 0.2 0.1 0 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 800 5 F = 1MHz 10V,8V,6V,4.5V,4V 700 4 600 Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 3.5V 3 2 Ciss 500 400 300 200 1 Coss 100 0 Crss 0 0 0.2 0.4 0.6 0.8 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C Typical Electrical Characteristics - P-channel 2 VDS = -15V ID = -3.8A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 0 2 4 6 8 -50 10 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 25 20 15 10 0 0.001 0.01 0.1 1 10 100 5 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA RθJA = 120 °C /W P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C Package Information © Preliminary 7 Publication Order Number: DS_AMCC530C_1A