UN ESD3.3V32D-A Transient voltage suppressors for esd protection Datasheet

Transient Voltage Suppressors for ESD Protection
ESDXXV32D-A Series
Description
SOD-323
The ESDXXV32D-A is designed to protect voltage sensitive
components from ESD and transient voltage events. Excellent
clamping capability, low leakage, and fast response time,
make these parts ideal for ESD protection on designs where
board space is at a premium. Because of its small size, it is
suited for use in cellular phones, MP3 players, digital
cameras and many other portable applications where board
space is at a premium.
Functional Diagram
Feature
u
320 Watts Peak Pulse Power per Line (tp=8/20μs)
u
Protects one I/O line or power line
u
Low clamping voltage
u
Working voltages : 3.3V, 5V, 8V, 12V, 15V,24V and 36V
u
Low leakage current
u
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
u
IEC61000-4-4 (EFT) 40A (5/50ηs)
u
IEC61000-4-5 (Lightning) 24A (8/20μs)
Applications
u
Cell Phone Handsets and Accessories
u
Microprocessor based equipment
u
Personal Digital Assistants (PDA’s)
u
Notebooks, Desktops, and Servers
u
Portable Instrumentation
u
Peripherals
u
Pagers
Mechanical Characteristics
u
JEDEC SOD-323 Package
u
Molding Compound Flammability Rating : UL 94V-0
u
Weight 5 Milligrams (Approximate)
u
Quantity Per Reel : 3,000pcs
u
Reel Size : 7 inch
u
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
320
W
PPP
Peak Pulse Power (tp=8/20μs waveform)
TL
Lead Soldering Temperature
260 (10sec)
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
Operating Temperature Range
-55 to +150
ºC
TJ
Air Discharge
±15
Contact Discharge
±8
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
40
A
IEC61000-4-5 ( Lightning )
24
A
UN Semiconductor Co., Ltd.
Revision January 06, 2014
KV
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@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
ESDXXV32D-A Series
I-V Curve Characteristics
Symbol
Parameter
I
Uni-directional
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage
VRWM
IF
@ IPP
Working Peak Reverse Voltage
IR
Maximum Reverse leakage Current
IT
Test Current
VB
Breakdown Voltage
IF
Forward Current
VF
Forward Voltage @IF
PPK
Peak Power Dissipation
@ VRWM
VC
V
VBR VRW
R
IT
@ IT
IR
VF
IPP
C
Max Capacitance @VR=0V & f=1MHz
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@1A
(Max.)
ESD3.3V32D-A
03W
3.3
4.0
1
6.5
ESD05V32D-A
05W
5
6.0
1
9.8
ESD08V32D-A
08W
8
8.5
1
13.4
ESD12V32D-A
12W
12
13.3
1
19
ESD15V32D-A
15W
15
16.7
1
24
ESD24V32D-A
24W
24
26.7
1
43
ESD36V32D-A
36W
36
40.0
1
60
Part Number
(@A)
IR
(μA)
(Max.)
C
(pF)
(Typ.)
10.9
30
40
500
13.5
24
10
350
21
18
10
150
25.9
15
1
120
30
12
1
100
48
8
1
80
75
5
1
30
VC
(Max.)
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
tr
100
Peak Value IPP
80
100%
TEST
WAVEFORM
PARAMETERS
tr=8μs
td=20μs
Percent of Peak Pulse Current %
IPP - Peak Pulse Current - % of IPP
120
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
90%
www.unsemi.com.tw
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@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
ESDXXV32D-A Series
Characteristic Curves
Fig3.
ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig4.
ESD Clamping (-8KV Contac per IEC61000-4-2)
SOD-323 Package Outline & Dimensions
Millimeters
Inches
Symbol
Min.
Nom.
Max.
Min.
Nom.
Max.
A
0.80
0.90
1.00
0.031
0.035
0.040
A1
0.00
0.05
0.10
0.000
0.002
0.004
A3
Soldering Footprint
0.006 REF
b
0.25
0.32
0.40
0.010
0.012
0.016
C
0.089
0.12
0.177
0.003
0.005
0.007
D
1.60
1.70
1.80
0.062
0.066
0.070
E
1.15
1.25
1.35
0.045
0.049
0.053
L
0.08
HE
2.30
0.098
0.105
0.003
2.50
2.70
0.090
Symbol
Millimeters
Inches
F
1.60
0.063
G
2.85
0.112
J
0.83
0.033
K
0.63
0.025
UN Semiconductor Co., Ltd.
Revision January 06, 2014
0.15 REF
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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