Philips Semiconductors Preliminary specification Breakover diodes GENERAL DESCRIPTION BR211SM series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical application is transient overvoltage protection in telecommunications equipment. SYMBOL PARAMETER MIN. MAX. UNIT V(BO) IH ITSM BR211SM-140 to BR211SM-280 Breakover voltage Holding current Non-repetitive peak current 140 150 - 280 40 V mA A OUTLINE - SOD106 SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VD Continuous voltage ITSM1 Non repetitive peak current ITSM2 Non repetitive on-state current I2t dIT/dt I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation Peak dissipation Storage temperature Operating ambient temperature Overload junction temperature Ptot PTM Tstg Ta Tvj CONDITIONS MIN. MAX. UNIT - V - 75% of V(BO)typ 40 - 15 A - 1.1 50 A2s A/µs - 40 - 1.2 50 150 70 150 W W ˚C ˚C ˚C 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-sp Thermal resistance junction to solder point Thermal resistance junction to ambient Thermal impedance junction to ambient Rth j-a Zth j-a August 1996 CONDITIONS MIN. TYP. MAX. UNIT - - 12 K/W pcb mounted; minimum footprint - 100 - K/W tp = 1 ms - 2.62 - K/W 1 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS V V(BR) V(BO) On-state voltage Avalanche voltage (min) Breakover voltage (max) ITM = 2 A I(BR) = 10mA I ≤ IS, tp = 100 µs BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 S(br) IH2 Temperature coefficient of V(BR) Holding current Tj = 25˚C Tj = 70˚C Switching current tp = 100 µs Off-state current VD = 85% V(BR)min, Tj = 70˚C 1 TM IS3 ID4 MIN. TYP. MAX. UNIT - - 2.5 V 123 140 158 176 193 211 228 246 150 100 10 - 140 160 180 200 220 240 260 280 +0.1 200 - 157 180 202 224 247 269 292 314 1000 10 V V V V V V V V %/K mA mA mA µA MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Linear rate of rise of off-state voltage that will not trigger any device Off-state capacitance V(DM) = 85% V(BR)min; Tj = 70 ˚C - - 2000 V/µs VD = 0 V; f = 1 kHz to 1 MHz - - 100 pF Cj VT current current IT ITSM 100% 90% IS V(BR) IH ID V(BO) I(BR) VD 50% voltage 30% 0 Symbol Symmetric BOD time 10us Fig.1. Definition of breakover diode characteristics. 700us Fig.2. Test waveform for high voltage impulse (ITSM1) according to CCITT vol IX-Rec K17. 1 Measured under pulsed conditions to avoid excessive dissipation 2 The minimum current at which the diode will remain in the on-state 3 The avalanche current required to switch the diode to the on-state 4 Measured at maximum recommended continuous voltage. Relative humidity < 65%. August 1996 2 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211 ITSM / A 20 BR211SM series 100 ID / uA I ITSM2 15 time max 10 10 1 5 0 0.1 1 10 100 Number of impulses 1000 -40 10000 Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; Tj = 70˚C prior to surge. 1.06 -20 0 20 40 Tj / C 60 80 100 Fig.6. Maximum off-state current as a function of temperature. V(BR)(Tj) V(BR)(25 C) 10 IS / A 1.04 1 1.02 max 1.00 typ 0.1 0.98 0.96 0.01 0.94 min 0.92 0.90 -40 -20 0 20 40 Tj / C 60 80 0.001 -50 100 Fig.4. Normalised avalanche breakdown voltage V(BR) and V(BO) as a function of temperature. 20 0 50 Tj / C 100 150 Fig.7. Switching current as a function of junction temperature. IT / A 10 IH / A Tj = 25 C Tj = 150 C 1 15 10 max typ 0.01 5 0 1 2 VT / V 3 0.001 -50 4 Fig.5. On-state current as a function of on-state voltage; tp = 200 µs to avoid excessive dissipation. August 1996 min 0.1 0 50 Tj / C 100 150 Fig.8. Minimum holding current as a function of temperature. 3 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes 100 BR211SM series Cj / pF 1000 100 BR211-140 typ BR211 Zth / (K/W) BR211-280 10 10 PD 1 tp t 1 1 10 100 0.1 10us 1000 VD / V 0.1s 10s 1000s tp / s Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; Tj = 25˚C. August 1996 1ms Fig.10. Transient thermal impedance. Zth j-a = f(tp). 4 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series MECHANICAL DATA Dimensions in mm 5.5 5.1 4.5 4.3 Net Mass: 0.2 g 2.3 2.0 0.2 0.05 3.3 2.7 2.8 1.6 2.4 1.4 Fig.11. SOD106. Notes 1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering Guidelines". Order code:9397 750 00505. August 1996 5 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 6 Rev 1.100