AP55T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
16.5mΩ
ID
G
56A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Rating
Units
VDS
Symbol
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
56
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
40
A
160
A
Parameter
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
125
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
1.2
℃/W
62
℃/W
1
201103092
AP55T10GP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
16.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
63
100
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
30
-
nC
2
td(on)
Turn-on Delay Time
VDS=50V
-
20
-
ns
tr
Rise Time
ID=10A
-
35
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
30
-
ns
tf
Fall Time
VGS=10V
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
3300 5280
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
190
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
220
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP55T10GP-HF
120
160
10V
9.0V
8.0V
ID , Drain Current (A)
120
7.0V
80
40
10V
9.0V
8.0V
7.0V
T C = 175 o C
100
ID , Drain Current (A)
o
T C = 25 C
80
60
V G = 6.0V
40
V G = 6.0V
20
0
0
0
4
8
12
16
20
0
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
2.8
1.2
I D =40A
V G =10V
I D =1mA
2.4
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
8
V DS , Drain-to-Source Voltage (V)
1
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
150
-50
200
0
50
100
150
200
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
40
1.6
Normalized VGS(th) (V)
I D =250uA
IS(A)
30
20
T j =175 o C
T j =25 o C
10
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP55T10GP-HF
I D = 40 A
V DS =80V
10
4000
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
5000
12
C iss
3000
6
2000
4
1000
2
0
C oss
C rss
0
0
20
40
60
80
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10us
Operation in this
area limited by
RDS(ON)
ID (A)
100
Normalized Thermal Response (Rthjc)
1000
100us
10
1ms
o
T c =25 C
Single Pulse
10ms
100ms
DC
1
0.1
1
10
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4