FDMA7630 Single N-Channel PowerTrench® MOSFET 30 V, 11 A, 13 mΩ Features General Description Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides Application RoHS compliant Pin 1 DC – DC Buck Converters D D G Drain Bottom Drain Contact D D D D G S Source S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Drain Current -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±20 V 11 24 Power Dissipation TA = 25 °C (Note 1a) 2.4 Power Dissipation TA = 25 °C (Note 1b) 0.9 Operating and Storage Junction Temperature Range –55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 145 °C/W Package Marking and Ordering Information Device Marking 630 Device FDMA7630 ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 Package MicroFET 2x2 1 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET July 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 15 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C –6 VGS = 10 V, ID = 11 A 10 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 9 A 14 20 VGS = 10 V, ID = 11 A, TJ = 125 °C 14 18 VDS = 5 V, ID = 11 A 36 gFS Forward Transconductance 1.0 2.0 mV/°C 13 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V f = 1.0 MHz 1020 1360 pF 315 415 pF 35 55 pF Ω 1.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 4.5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 11 A VGS = 10 V, RGEN = 6 Ω VDD = 15 V, ID = 11 A 8 15 ns 3 10 ns 19 34 ns 3 10 ns 16 22 nC 8 10 nC 3.0 nC 2.2 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A IF = 11 A, di/dt = 100 A/μs 2 (Note 2) A 0.8 1.2 V 21 33 ns 6 12 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 2 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 24 3.0 ID, DRAIN CURRENT (A) 20 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V 12 8 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 VGS = 4 V VGS = 4.5 V 1.5 1.0 VGS = 6 V VGS = 10 V 0.5 2.0 0 4 8 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 24 60 ID = 11 A VGS = 10 V ID = 11 A 40 30 10 TJ = 25 oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 125 oC 12 TJ = 25 oC TJ = -55 oC 4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 8 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 5.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 6 24 VDS = 5 V 0 1.0 4 Figure 4. On-Resistance vs Gate to Source Voltage 16 8 2 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = TJ = 125 oC 20 0 -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 20 12 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 24 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 2.5 3 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 11 A 1000 CAPACITANCE (pF) 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Ciss Coss 100 2 f = 1 MHz VGS = 0 V 0 0 5 10 15 10 0.1 20 1 Qg, GATE CHARGE (nC) 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 50 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) Crss 10 1 ms 1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RθJA = 145 oC/W DERIVED FROM TEST DATA TA = 25 oC 0.01 0.01 10 s DC 0.1 1 10 100 SINGLE PULSE RθJA = 145 oC/W VGS = 10 V TA = 25 oC 100 10 1 0.1 -4 10 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 145 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 4 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2.000 0.10 C 1.00 6 2X 4 1.35 0.66 2.30 1.05 2.000 NO DRAIN OR GATE TRACES ALLOWED IN THIS AREA (0.47) 0.10 C PIN#1 LOCATION 1 2X 3 0.40 TYP 0.65 TYP RECOMMENDED LAND PATTERN OPT 1 0.8 MAX 0.10 C (0.20) 0.08 C 0.05 0.00 C SEATING PLANE 1.00 6 (0.30) PIN #1 IDENT 4 1.000 0.800 1 0.33 0.20 3 1.35 0.66 2.30 1.05 (0.56) 1.05 0.95 (0.47) 1 6 0.65 TYP 4 0.65 0.25~0.35 1.30 0.10 0.05 3 0.40 TYP RECOMMENDED LAND PATTERN OPT 2 C A B C A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILENAME: MKT-MLP06Lrev2. ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 5 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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I61 ©2012 Fairchild Semiconductor Corporation FDMA7630 Rev.C3 6 www.fairchildsemi.com FDMA7630 Single N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® SMART START™ EcoSPARK® MegaBuck™ TriFault Detect™ Solutions for Your Success™ EfficentMax™ MICROCOUPLER™ TRUECURRENT®* SPM® ESBC™ MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® MicroPak2™ SuperFET® SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™