ACE ACE3400B N-channel enhancement mode mosfet Datasheet

ACE3400B
N-Channel Enhancement Mode MOSFET
Description
The ACE3400BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge
low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load
switch or in PWM applications.
Features





VDS 30V
RDS(ON)@VGS=10V, IDS=5.2A, Typ 24mΩ
RDS(ON)@VGS=4.5V, IDS=5A, Typ 27mΩ
Fast switching speed
Low threshold voltage (0.8V) makes this device ideal for portable equipment
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Continuous (Note 1)
ID
5.2
Pulsed (Note 2)
IDM
30
PD
1
Drain Current
Power Dissipation (Note 1)
A
W
Operating and storage junction temperature range TJ,TSTG -55~+150 ℃
Packaging Type
SOT-23-3L
3
1
SOT-23-3L Description Function
1
G
Gate
2
S
Source
3
D
Drain
2
VER 1.2
1
ACE3400B
N-Channel Enhancement Mode MOSFET
Ordering information
ACE3400B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Drain-source breakdown
voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Test Conditions
Static
V(BR)DSS
VGS=0V, ID=250µA
IDSS
VGS(th)
IGSS
VDS=24V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±12V, VDS=0V
VGS=10V, ID=5.2A
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=5V, ID=5A
ISD=1A, VGS=0V
Drain-source on-state
resistance
RDS(ON)
Forward transconductance
Diode forward voltage
Turn-on delay time
Turn-off delay time
Input capacitance
Output capacitance
Reverse transfer capacitance
gFS
VSD
td(on)
td(off)
Ciss
Coss
Crss
Min
Typ
30
34
0.7
10
0.8
24
27
39
15
0.71
VDS=15V, RL=2.3Ω,
VGS=10V, RGEN=3Ω
VGS=0V, VDS=15V,
f=1.0MHz
Max
Unit
V
1
1
±100
28
33
52
µA
V
nA
mΩ
1
18
70
697
259
308
S
V
ns
pF
2
Note : 1. DUT is mounted on a 1in FR-4 board with 2oz. Copper in a still air environment at 25°
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.2
2
ACE3400B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
3
ACE3400B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
4
ACE3400B
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3L
VER 1.2
5
ACE3400B
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6
Similar pages