CYStech Electronics Corp. Spec. No. : C816A3-H Issued Date : 2003.07.02 Revised Date : Page No. : 1/4 Low VCE(SAT) PNP Epitaxial Planar Transistor BTB1426A3 Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. Features • High DC current gain and excellent hFE linearity. • Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA). Symbol Outline BTB1426A3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits Unit -20 -20 -6 -3 -5 (Note ) 750 167 150 -55~+150 V V V A mW °C/W °C °C Note : Single pulse, Pw≤10ms, Duty Cycle≤2%. BTB1426A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816A3-H Issued Date : 2003.07.02 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -20 -6 120 - Typ. 240 35 Max. -0.1 -0.1 -0.5 820 - Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-20V VEB=-5V IC=-2A, IB=-0.1A VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTB1426A3 Q 120~270 R 180~390 S 270~560 T 390~820 CYStek Product Specification Spec. No. : C816A3-H Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=40IB Current Gain---HFE Saturation Voltage---(mV) VCE=1V 100 100 10 1 1 10 100 1000 1 10000 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) ON Voltage vs Collector Current Power Derating Curve 1000 Power Dissipation---PD(mW) ON Voltage---(mV) 800 VBE(ON)@VCE=1V 100 700 600 500 400 300 200 100 0 0.1 1 10 100 1000 Collector Current IC---(mA) BTB1426A3 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C816A3-H Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date : Page No. : 4/4 TO-92 Dimension Marking: α2 A B 1 2 B1426 3 α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1426A3 CYStek Product Specification