Diode Semiconductor Korea B120 B- - - B160B REVERSE VOLTAGE: 20 --- 60 V CURRENT: 1.0 A SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ Plastic package has Underwriters Laboratory 111 Flammability Classification 94V-0 SMB 4 . 5± 0.1 5 2.0± 0.15 ◇ Built-in strain relief 3.5± 0.2 ◇ For surface mounted applications ◇ Low profile package ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability ◇ Low power loss,high effciency ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection 2.3± 0.15 5 . 3± 0.2 o ◇ High temperature soldering guaranteed:250 C/10 111 seconds at terminals 0.2± 0.05 1.25± 0.2 0.203MAX MECHANICAL DATA ◇ Case:JEDEC SMB,molded plastic over 1111passivated chip ◇ Terminals:Solder plated, solderable per MIL-STD-750, 1111Method 2026 ◇ Polarity: Color band denotes cathode end Dimensions in millimeters ◇ Weight: 0.003 ounces, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified B120B Dev ice marking code B130B B140B B150B B160B B120B OOHB130BO O IB140BOOOIB150B B160B UNITS Maximum recurrent peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRWS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forw ord rectified current at x TL(SEE FIG.1) Peak forw ard surge current 8.3ms single halfx sine-w ave superimposed on rated load(JEDEC x Method) Maximum instantaneous forw ard voltage at x 1.0A(NOTE.1) Maximum DC reverse current (NOTE.1) x @TA=25oC at rated DC blockjing voltage 1.0 A I FSM 30.0 A VF IR Storage temperature range Operating junction x and storage temperature range 0.5 0.7 0.5 V mA 10.0 @TA =100oC Typical thermal resitance (NOTE. 2) Storage temperature range I(AV) RθJA 88.0 RθJL 20.0 Tj - 55 --- +125 TSTG - 55 --- +150 NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle 2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm 2)copper pad areas o C/W o C o C www.diode.kr Diode Semiconductor Korea B120B - - - B160B AVERAGE FORWARD CURRENT,AMPERES 1.0 FIG.2-- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,AMPERES FIG.1 -- FORWARD DERATING CURVE Resistive or inductive Load 0.5 P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS 0 50 60 70 80 90 100 110 120 130 140 150 160 170 50 20 10 0 O TJ=100 C S O TJ=25 C B120B-B140B B150B-B160B 0.2 0.4 0.6 0.8 1.0 1.2 100 1.4 100 INSTANTANEOUS REVERSE CURRENT,MICROAMPERES TJ=125 C 10 1.6 B120B-B140B B150B-B160B 10 0 T J=125 C 1 0.1 0 T J=75 C 0.01 TJ=25 0C 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,％ INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT,AMPERES O 0.01 0 10 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 50 0.1 1 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 1 TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method) 30 LEAD TEMPERATURE ℃ Puise Width=300 1%DUTY CYCLE O 40 400 0 TJ=25 C f=1.0MHz Vsig=50mVp-p 100 10 0.1 B120B-B140B B150B-B160B 1 10 100 REVERSE VOLTAGE,VOLTS www.diode.kr