TI BQ20Z80-V102 Sbs 1.1-compliant gas gauge enabled with impedance track tm technology for use with the bq29312a Datasheet

bq20z80-V102
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK™
TECHNOLOGY FOR USE WITH THE bq29312A
FEATURES
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Patented Impedance Track™ Technology
Accurately Measures Available Charge in
Li-Ion and Li-Polymer Batteries
Better than 1% Error Over Lifetime of the
Battery
Instant Accuracy – No Learning Cycle
Required
Supports the Smart Battery Specification SBS
V1.1
Works With the TI bq29312A Analog
Front-End (AFE) Protection IC to Provide
Complete Pack Electronics Solution
Full Array of Programmable Voltage, Current,
and Temperature Protection Features
Integrated Time Base Removes Need for
External Crystal with Optional Crystal Input
Electronics for 7.2-V, 10.8-V or 14.4-V Battery
Packs With Few External Components
Based on a Powerful Low-Power RISC CPU
Core With High-Performance Peripherals
Integrated Field Programmable FLASH
Memory Eliminates the Need for External
Configuration Memory
Measures Charge Flow Using a
High-Resolution, 16-Bit Integrating
Delta-Sigma Converter
– Better Than 0.65 nVh of Resolution
– Self-Calibrating
– Offset Error Less Than 1 µV
Uses 16-Bit Delta-Sigma Converter for
Accurate Voltage and Temperature
Measurements
Extensive Data Reporting Options For
Improved System Interaction
Optional Pulse Charging Feature for Improved
Charge Times
Drives 3-, 4- or 5-Segment LED Display for
Remaining Capacity Indication
Supports SHA-1 Authentication
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•
Lifetime Data Logging
38-Pin TSSOP (DBT)
APPLICATIONS
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Notebook PCs
Medical and Test Equipment
Portable Instrumentation
DESCRIPTION
The bq20z80 SBS-compliant gas gauge IC,
incorporating
patented
Impedance
Track™
technology, is designed for battery-pack or in-system
installation. The bq20z80 measures and maintains
an accurate record of available charge in Li-ion or
Li-polymer
batteries
using
its
integrated
high-performance analog peripherals. The bq20z80
monitors capacity change, battery impedance,
open-circuit voltage, and other critical parameters of
the battery pack, and reports the information to the
system host controller over a serial-communication
bus. It is designed to work with the bq29312A analog
front-end (AFE) protection IC to maximize
functionality and safety, and minimize component
count and cost in smart battery circuits.
The Impedance Track technology continuously
analyzes the battery impedance, resulting in superior
gas-gauging accuracy. This enables remaining
capacity to be calculated with discharge rate,
temperature, and cell aging all accounted for during
each stage of every cycle.
AVAILABLE OPTIONS
PACKAGE
TA
38-PIN TSSOP (DBT)
Tube
38-PIN TSSOP (DBT)
Tape and Reel
–40°C to
85°C
bq20z80DBT-V102 (1)
bq20z80DBTR-V102 (2)
(1)
(2)
A single tube quantity is 50 units.
A single reel quantity is 2000 units
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Impedance Track is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2007, Texas Instruments Incorporated
bq20z80-V102
www.ti.com
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
SYSTEM DIAGRAM
Discharge / Charge /
Precharge FETs
Fuse
Pack +
bq20z80
PCH FET Drive
Supply V oltage
Power Management
LDO, TOUT, and Power Mode control
Temperature Measurement
<1% Error
768 Bytes of
User Flash
SMBus
bq29312A
PF Input
Fail-Safe Protection
TINT
32-kHz Clock
Generator
Precharge
FET Drive
Cell Balancing
Drive
LDO, Therm Output Drive & UVLO
T1
System Watchdog
Delay Counters
System Interface
RAM Registers
32 kHz
Cell Balancing Algorithm and Control
SBS v1.1 Data
I2 C
System Interface
XAlert
bq29312 RAM/Comms Validation
1st Level OC
Protection
1st Level OV and
UV Protection
Pack Undervoltage
Power Mode
Control
Cell and Pack
Voltage
Measurement
Sleep
Power Mode Control
bq294xx
2-Tier Overcurrent Protection
Impedance Track (TM) + Lifetime Data Logging
Voltage Level Translator
Pack Sense Resistor
(5 m - 20 mW typ)
TSSOP (DBT)
(TOP VIEW)
VIN
TS1
TS2
PU
PRES
SCLK
SAFE
VDDD
RBI
SDATA
VSSD
SAFE
NC
NC
SMBC
SMBD
DISP
PFIN
VSSD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
38
37
36
35
34
33
32
31
30
29
28
VSSD
NC
NC
CLKOUT
XCK1 / VSSA
XCK2 / ROSC
FILT
VDDA
VSSA
VSSA
27
SR1
SR2
26
25
24
23
22
21
20
MRST
XALERT
LED1
LED2
LED3
LED4
LED5
NC - No internal connection
2
2 nd Level Overvoltage Protection
Precharge Control
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
TERMINAL FUNCTIONS
TERMINAL
NO.
NAME
I/O (1)
DESCRIPTION
1
VIN
I
Voltage measurement input from the AFE
2
TS1
I
1st Thermistor voltage input connection to monitor temperature
3
TS2
I
2nd Thermistor voltage input connection to monitor temperature
4
PU
O
Output to pull up the PRES pin for system detection
5
PRES
I
Active low input to sense system insertion and typically requires additional ESD protection
6
SCLK
I/OD
7
SAFE
O
Active high output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 12)
8
VDDD
P
Positive supply for digital circuitry and I/O pins
9
RBI
P
Backup power to the bq20z80 data registers during periods of low operating voltage. RBI accepts a
storage capacitor or a battery input.
10
SDATA
I/O
Data transfer to and from the AFE
12
SAFE
O
Active low output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 7)
13
NC
–
Not used— leave floating
Not used— leave floating
Communication clock to the AFE
14
NC
–
15
SMBC
I/OD
SMBus clock open-drain bidirectional pin used to clock the data transfer to and from the bq20z80
16
SMBD
I/OD
SMBus data open-drain bidirectional pin used to transfer address and data to and from the bq20z80
17
DISP
I
Display control for the LEDs. This pin is typically connected to bq29312A REG via a 100-kΩ resistor
and a push-button switch to VSSD.
18
PFIN
I
Active low input to detect secondary protector output status and allows the bq20z80 to report the
status of the 2nd level protection output
20
LED5
O
LED5 display segment that drives an external LED depending on the firmware configuration
21
LED4
O
LED4 display segment that drives an external LED depending on the firmware configuration
22
LED3
O
LED3 display segment that drives an external LED depending on the firmware configuration
23
LED2
O
LED2 display segment that drives an external LED depending on the firmware configuration
24
LED1
O
LED1 display segment that drives an external LED depending on the firmware configuration
25
XALERT
I
Input from bq29312A XALERT output.
26
MRST
I
Master reset input that forces the device into reset when held high
27
SR2
IA
Connections for a small-value sense resistor to monitor the battery charge- and discharge-current
flow
28
SR1
IA
Connections for a small-value sense resistor to monitor the battery charge- and discharge-current
flow
31
VDDA
P
Positive supply for analog circuitry
32
FILT
IA
Analog input connected to the external PLL filter components which are a 150-pF capacitor to VSSA,
in parallel with a 61.9-kΩ resistor and a 2200-pF capacitor in series. Place these components as
close as possible to the bq20z80 to ensure optimal performance.
33
XCK2/ROSC
O
32.768-kHz crystal oscillator output pin or connected to a 100k, 50ppm or better resistor if the
internal oscillator is used
34
XCK1/VSSA
I
32.768-kHz crystal oscillator input pin or connected to VSSA if the internal oscillator is used
35
CLKOUT
O
32.768-kHz output for the bq29312. This pin should be directly connected to the AFE.
36, 37
NC
-
Not used— leave floating
11, 19, 38
VSSD
P
Negative supply for digital circuitry
29, 30
VSSA
P
Negative supply for analog circuitry.
(1)
I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1)
RANGE
VDDAand VDDD relative to VSS (2)
Supply voltage range
V(IOD) relative to VSS (2)
Open-drain I/O pins
VI relative to VSS
(2)
–0.3 V to 4.1 V
–0.3 V to 6 V
Input voltage range to all other pins
–0.3 V to VDDA + 0.3 V
TA
Operating free-air temperature range
–40°C to 85°C
Tstg
Storage temperature range
–65°C to 150°C
(1)
(2)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VSS refers to the common node of V(SSA) and V(SSD).
ELECTRICAL CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
VDD
IDD
TEST CONDITIONS
Supply voltage
VDDA and VDDD
Operating mode current
TYP
MAX
3.3
3.6
350 (1)
bq20z80 + bq29312A
375
Sleep mode
8 (1)
bq20z80 + bq29312A
Output voltage low SMBC, SMBD, SDATA, SCLK, SAFE,
SAFE, PU
IOL = 0.5 mA
µA
0.1
0.4
LED1 – LED5
IOL = 10 mA
VOH
Output high voltage, SMBC, SMBD, SDATA, SCLK, SAFE,
SAFE, PU
IOH = –1 mA
VIL
Input voltage low SMBC, SMBD, SDATA, SCLK, XALERT,
PRES, PFIN
–0.3
0.8
DISP
VIH
CIN
0.4
VDD– 0.5
–0.3
0.8
2
6
DISP
2
VDD + 0.3
Input capacitance
5
V(AI2) Input voltage range SR1, SR2
V
V
V
Input voltage high SMBC, SMBD, SDATA, SCLK, XALERT,
PRES, PFIN
V(AI1) Input voltage range VIN, TS1, TS2
V
µA
0.1 (1)
bq20z80 + bq29312A
UNIT
µA
28
Shutdown Mode
I(SLP) Shutdown Current
V
V
V
V
pF
VSS– 0.3
0.8 x VDD
VSS– 0.25
0.25
V
Z(AI1) Input impedance SR1, SR2
0 V–1 V
2.5
MΩ
Z(AI2) Input impedance VIN, TS1, TS2
0 V–1 V
8
MΩ
(1)
4
3
No flash programming
I(SLP) Low-power storage mode current
VOL
MIN
This value does not include the bq29312A
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
POWER-ON RESET
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
TYP
MAX
Negative-going voltage input
PARAMETER
TEST CONDITIONS
2.1
2.3
2.5
V
VHYS
Power-on reset hysteresis
50
150
200
mV
MAX
UNIT
0.25
V
UNIT
POWER ON RESET BEHAVIOR
vs
FREE-AIR TEMPERATURE
2.50
140
2.45
135
2.40
130
VIT-
2.35
125
2.30
120
2.25
115
Vhys
2.20
110
2.15
105
2.10
-20 -10
V hys - Hysterisis Voltage - mV
V IT - Negative Going Input Threshold Voltage - V
MIN
VIT–
100
0
10 20 30 40 50 60 70 80
TA - Free-Air Temperature - °C
INTEGRATING ADC (Coulomb Counter) CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
V(SR)
Input voltage range, V(SR2) and V(SR1)
V(SROS)
Input offset
INL
Integral nonlinearity error
TEST CONDITIONS
V(SR) = V(SR2) – V(SR1)
MIN
TYP
–0.25
µV
1
0.004%
0.019%
TYP
MAX
2
5
PLL SWITCHING CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
t(SP)
(1)
Start-up time
(1)
TEST CONDITIONS
MIN
0.5% frequency error
UNIT
ms
The frequency error is measured from the trimmed frequency of the internal system clock which is 128 oscillator frequency, nominally
4.194 MHz.
OSCILLATOR
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ROSC = 100 kΩ
f(exo)
Frequency error from 32.768 kHz
ROSC = 100 kΩ, VDD = 3.3 V
XCK1 = 12-pF XTAL
f(sxo)
(1)
Start-up time
(1)
TYP
MAX
–2% 0.25%
MIN
2%
–1% 0.25%
–0.25%
UNIT
1%
0.25%
ROSC = 100 kΩ
250
µs
XCK1 = 12-pF XTAL
200
ms
The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
DATA FLASH MEMORY CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Data retention
See
(1)
10
Years
Flash programming write-cycles
See
(1)
20,000
Cycles
t(WORDPROG) Word programming time
See
(1)
I(DDPROG)
See
(1)
tDR
(1)
Flash-write supply current
2
ms
8
15
mA
TYP
MAX
UNIT
10
100
nA
Assured by design. Not production tested
REGISTER BACKUP
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
I(RBI)
V(RBI)
(1)
6
RBI data-retention input current
RBI data-retention
TEST CONDITIONS
MIN
V(RBI) > 3 V, VDD < VIT
voltage (1)
1.3
Specified by design. Not production tested.
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bq20z80-V102
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
SMBus TIMING SPECIFICATIONS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
fSMB
SMBus operating frequency
Slave mode, SMBC 50% duty cycle
fMAS
SMBus master clock frequency
Master mode, no clock low slave extend
tBUF
Bus free time between start and stop
tHD:STA
Hold time after (repeated) start
tSU:STA
Repeated start setup time
tSU:STO
Stop setup time
MIN
TYP
10
MAX
100
51.2
kHz
4.7
4
µs
4.7
4
Receive mode
0
Transmit mode
300
tHD:DAT
Data hold time
tSU:DAT
Data setup time
tTIMEOUT
Error signal/detect
tLOW
Clock low period
tHIGH
Clock high period
See
(2)
tLOW:SEXT
Cumulative clock low slave extend time
See
(3)
25
tLOW:MEXT
Cumulative clock low master extend time
See
(4)
10
tF
Clock/data fall time
(VILMAX– 0.15 V) to (VIHMIN + 0.15 V)
tR
Clock/data rise time
0.9 VDD to (VILMAX – 0.15 V)
(1)
(2)
(3)
(4)
UNIT
ns
250
See
(1)
25
35
4.7
4
50
300
1000
ms
µs
ms
ns
The bq20z80 times out when any clock low exceeds tTIMEOUT.
tHIGH:MAX. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving the bq20z80 that is in progress.
tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.
tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.
SMBus TIMING DIAGRAM
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FEATURE SET
NOTE:
The bq20z80-V102 is designed to work with the bq29312A AFE. The bq20z80
features are only available with the bq29312A.
.
Primary (1st Level) Safety Features
The bq20z80 supports a wide range of battery and system protection features that can easily be configured. The
primary safety features includes:
•
•
•
•
•
•
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Battery cell over/under voltage protection
Battery pack over/under voltage protection
2 independent charge overcurrent protection
3 independent discharge overcurrent protection
Short circuit protection
Over temperature protection
Host watchdog
Secondary (2nd Level) Safety Features
The secondary safety features of the bq20z80 can be used to indicate more serious faults via the SAFE (pin 7)
and SAFE (pin 12) pins. These pins can be used to blow a in-line fuse to permanently disable the battery pack
from charging or discharging. The secondary safety features includes:
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Safety over voltage
Battery cell imbalance
2nd level protection IC input
Safety over current
Safety over temperature
Open thermistor
Charge FET and 0 Volt Charge FET fault
Discharge FET fault
Fuse blow failure detection
AFE communication error
Internal flash data error
Charge Control Features
The bq20z80 charge control features includes:
•
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•
•
•
•
•
8
Report the appropriate charging current needed for constant current charging and the appropriate charging
voltage needed for constant voltage charging to a smart charger using SMBus broadcasts.
Determines the chemical state of charge of each battery cell using Impendance Track™ and can reduce the
charge difference of the battery cells in fully charged state of the battery pack gradually using cell balancing
algorithm during charging. This prevents fully charged cells from overcharging causing excessive degredation
and also increases the usable pack energy by preventing to early charge termination
supports pre-charging/zero-volt charging
support fast charging
supports pulse charging
detects charge termination
report charging faults and also indicate charge status via charge and discharge alarms.
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FEATURE SET (continued)
Gas Gauging
The bq20z80 uses the Impedance Track™ Technology to measure and calculate the available charge in battery
cells. The archievable accuracy is better than the coloumb counting method over the lifetime of the battery and
there is no full charge discharge learning cycle required.
See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note
(SLUA364) for further details.
LED Display
The bq20z80 can drive 3-, 4-, or 5- segment LED display for remaining capacity indication.
LifeTime Data Logging Features
The bq20z80 offers a lifetime data logging array, where all important measurements are stored for warranty and
analysis purposes. The data monitored includes:
•
•
•
•
•
•
•
•
•
•
•
•
•
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
Lifetime
maximum temperature
minimum temperature
maximum battery cell voltage
minimum battery cell voltage
maximum battery pack voltage
minimum battery pack voltage
maximum charge current
maximum discharge current
maximum charge power
maximum discharge power
maximum average discharge current
maximum average discharge power
average temperature
Authentication
The bq20z80 supports authentication by the host using SHA-1.
Power Modes
The bq20z80 supports 3 different power modes to reduce power consumption:
•
•
•
In Normal Mode, the bq20z80 performs measurements, calculations, protection decicions, data update in 1
second intervals. Between these intervals, the bq20z80 is in a reduced power stage.
In Sleep Mode, the bq20z80 performs measurements, calculations, protection decicions, data update in
adjustable time intervals. Between these intervals, the bq20z80 is in a reduced power stage.
In Shutdown Mode the bq20z80 is completety disabled.
CONFIGURATION
Oscillator Function
The oscillator of the bq20z80 can be set up for internal or external operation. On power up, the bq20z80
automatically attempts to start the internal oscillator. If a 100-kΩ resistor is not connected to ROSC (pin 33),
then it attempts to start the oscillator using an external 32.768-kHz crystal.
NOTE:
Install either the 100-kΩ ROSC resistor or the 12-pF, 32.768-kHz crystal. Do not
install both.
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FEATURE SET (continued)
The performance of the internal oscillator depends on the tolerance of the 100-kΩ resistor between RSOC (pin
33) and VSSA (pin 34). Choose a resistor with a tolerance of ±0.1%, and 50-ppm or better temperature drift.
Place this resistor as close as possible to the bq20z80. If a 12-pF crystal is used, place it as close as possible to
the XCK1 (pin 34) and XCK2 (pin 33) pins. If not properly implemented, the PCB layout in this area can degrade
oscillator performance.
System Present Operation
The bq20z80 pulls the PU pin high periodically (1 s). Connect this pin to the PRES pin of the bq20z80 via a
resistor of approximately 5 kΩ. The bq20z80 measures the PRES input during the PU-active period to determine
its state. If PRES input is pulled to ground by external system, the bq20z80 detects this as system present.
BATTERY PARAMETER MEASUREMENTS
The bq20z80 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement, and a
second delta-sigma ADC for individual cell and battery voltage, and temperature measurement.
Charge and Discharge Counting
The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltage
drop across a small-value sense resistor between the SR1 and SR2 pins. The integrating ADC measures bipolar
signals from -0.25 V to 0.25 V. The bq20z80 detects charge activity when VSR = V(SR1)-V(SR2)is positive and
discharge activity when VSR = V(SR1)-V(SR2) is negative. The bq20z80 continuously integrates the signal over
time, using an internal counter. The fundamental rate of the counter is 0.65 nVh.
Voltage
The bq20z80 updates the individual series cell voltages through the bq29312A at one second intervals. The
bq20z80 configures the bq29312A to connect the selected cell, cell offset, or bq29312A VREF to the CELL pin
of the bq29312A, which is required to be connected to VIN of the bq20z80. The internal ADC of the bq20z80
measures the voltage, scales and calibrates it appropriately. This data is also used to calculate the impedance
of the cell for the Impedance Track™ gas-gauging.
Current
The bq20z80 uses the SR1 and SR2 inputs to measure and calculate the battery charge and discharge current
using a 5 mΩ to 20 mΩ typ. sense resistor.
Auto Calibration
The bq20z80 provides an auto-calibration feature to cancel the voltage offset error across SR1 and SR2 for
maximum charge measurement accuracy. The bq20z80 performs auto-calibration when the SMBus lines stay
low continuously for a minimum of 5 s.
Temperature
The bq20z80 TS1 and TS2 inputs, in conjunction with two identical NTC thermistors (default are Semitec
103AT), measure the battery environmental temperature. The bq20z80 can also be configured to use its internal
temperature sensor.
COMMUNICATIONS
The bq20z80 uses SMBus v1.1 with Master Mode and package error checking (PEC) options per the SBS
specification.
SMBus On and Off State
The bq20z80 detects an SMBus off state when SMBC and SMBD are logic-low greater than an adjustable
period of time. Clearing this state requires either SMBC or SMBD to transition high. Within 1 ms, the
communication bus is available.
10
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FEATURE SET (continued)
SBS and Dataflash Values
Table 1. SBS COMMANDS
SBS Cmd
Mode
Name
Format
Size in
Bytes
Min
Value
Max
Value
Default Value
0x00
R/W
ManufacturerAccess
hex
2
0x0000
0xffff
—
0x01
R/W
RemainingCapacityAlarm
unsigned int
2
0
65535
—
mAh or
10mWh
0x02
R/W
RemainingTimeAlarm
unsigned int
2
0
65535
—
min
0x03
R/W
BatteryMode
hex
2
0x0000
0xffff
—
0x04
R/W
AtRate
signed int
2
-32768
32767
—
mA or 10mW
0x05
R
AtRateTimeToFull
unsigned int
2
0
65535
—
min
0x06
R
AtRateTimeToEmpty
unsigned int
2
0
65535
—
min
0x07
R
AtRateOK
unsigned int
2
0
65535
—
0x08
R
Temperature
unsigned int
2
0
65535
—
0.1°K
0x09
R
Voltage
unsigned int
2
0
20000
—
mV
0x0a
R
Current
signed int
2
-32768
32767
—
mA
0x0b
R
AverageCurrent
signed int
2
-32768
32767
—
mA
0x0c
R
MaxError
unsigned int
1
0
100
—
%
0x0d
R
RelativeStateOfCharge
unsigned int
1
0
100
—
%
0x0e
R
AbsoluteStateOfCharge
unsigned int
1
0
100
—
%
0x0f
R
RemainingCapacity
unsigned int
2
0
65535
—
mAh or
10mWh
0x10
R
FullChargeCapacity
unsigned int
2
0
65535
—
mAh or
10mWh
0x11
R
RunTimeToEmpty
unsigned int
2
0
65535
—
min
0x12
R
AverageTimeToEmpty
unsigned int
2
0
65535
—
min
0x13
R
AverageTimeToFull
unsigned int
2
0
65535
—
min
0x14
R
ChargingCurrent
unsigned int
2
0
65535
—
mA
0x15
R
ChargingVoltage
unsigned int
2
0
65535
—
mV
0x16
R
BatteryStatus
unsigned int
2
0x0000
0xffff
—
0x17
R/W
CycleCount
unsigned int
2
0
65535
—
0x18
R/W
DesignCapacity
unsigned int
2
0
65535
0x19
R/W
DesignVoltage
unsigned int
2
7000
16000
14400
0x1a
R/W
SpecificationInfo
unsigned int
2
0x0000
0xffff
0x0031
0x1b
R/W
ManufactureDate
unsigned int
2
0
65535
0
0x1c
R/W
SerialNumber
hex
2
0x0000
0xffff
0x0001
0x20
R/W
ManufacturerName
String
11+1
—
—
Texas Instruments
ASCII
0x21
R/W
DeviceName
String
7+1
—
—
bq20z80
ASCII
0x22
R/W
DeviceChemistry
String
4+1
—
—
LION
ASCII
0x23
R
ManufacturerData
String
14+1
—
—
—
ASCII
0x2f
R/W
Authenticate
String
20+1
—
—
—
ASCII
0x3c
R
CellVoltage4
unsigned int
2
0
65535
mV
0x3d
R
CellVoltage3
unsigned int
2
0
65535
mV
0x3e
R
CellVoltage2
unsigned int
2
0
65535
mV
0x3f
R
CellVoltage1
unsigned int
2
0
65535
mV
Submit Documentation Feedback
Unit
mAh or
10mWh
mV
11
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 2. EXTENDED SBS COMMANDS
SBS
Cmd
Mode
Name
Format
Size in
Bytes
Min Value
Max Value
Default Value
Unit
0x45
R
AFEData
String
11+1
—
—
—
ASCII
0x46
R/W
FETControl
hex
1
0x00
0xff
—
0x4f
R
StateOfHealth
unsigned int
1
0
100
—
0x50
R
SafetyAlert
hex
2
0x0000
0xffff
—
0x51
R
SafetyStatus
hex
2
0x0000
0xffff
—
0x52
R
PFAlert
hex
2
0x0000
0xffff
—
0x53
R
PFStatus
hex
2
0x0000
0xffff
—
0x54
R
OperationStatus
hex
2
0x0000
0xffff
—
0x55
R
ChargingStatus
hex
2
0x0000
0xffff
—
0x57
R
ResetData
hex
2
0x0000
0xffff
—
0x58
R
WDResetData
unsigned int
2
0
65535
—
0x5a
R
PackVoltage
unsigned int
2
0
65535
—
0x5d
R
AverageVoltage
unsigned int
2
0
65535
0x60
R/W
UnSealKey
hex
4
0x00000000 0xffffffff
—
0x62
R/W
PFKey
hex
4
0x00000000 0xffffffff
—
0x63
R/W
AuthenKey3
hex
4
0x00000000 0xffffffff
—
0x64
R/W
AuthenKey2
hex
4
0x00000000 0xffffffff
—
0x65
R/W
AuthenKey1
hex
4
0x00000000 0xffffffff
—
0x66
R/W
AuthenKey0
hex
4
0x00000000 0xffffffff
—
0x70
R/W
ManufacturerInfo
String
8+1
—
—
—
0x71
R/W
SenseResistor
unsigned int
2
0
65535
—
0x77
R/W
DataflashClass
hex
2
0x0000
0xffff
—
0x78
R/W
DataFlashSubClass1
hex
32
—
—
—
0x79
R/W
DataFlashSubClass2
hex
32
—
—
—
0x7a
R/W
DataFlashSubClass3
hex
32
—
—
—
0x7b
R/W
DataFlashSubClass4
hex
32
—
—
—
0x7c
R/W
DataFlashSubClass5
hex
32
—
—
—
0x7d
R/W
DataFlashSubClass6
hex
32
—
—
—
0x7e
R/W
DataFlashSubClass7
hex
32
—
—
—
0x7f
R/W
DataFlashSubClass8
hex
32
—
—
—
%
mV
mV
µΩ
Table 3. DATAFLASH VALUES
Class
Subclass
ID
Subclass
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
1st Level
Safety
0
Voltage
0
COV Threshold
U2
3700
5000
4300
mV
2
COV Time
U1
0
60
2
Sec
3
COV Recovery
U2
0
4400
3900
mV
5
COV Delta
U1
0
200
20
mV
6
COV Temp. Hys
U1
0
250
100
0.1°C
7
POV Threshold
U2
0
18000
17500
mV
9
POV Time
U1
0
60
2
Sec
10
POV Recovery
U2
0
17000
16000
mV
12
CUV Threshold
U2
0
3500
2200
mV
14
CUV Time
U1
0
60
2
Sec
15
CUV Recovery
U2
0
3600
3000
mV
17
PUV Threshold
U2
0
16000
11000
mV
19
PUV Time
U1
0
60
2
Sec
20
PUV Recovery
U2
0
16000
12000
mV
12
Submit Documentation Feedback
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Subclass
ID
Subclass
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
1st Level
Safety
1
Current
0
OC (1st Tier) Chg
U2
0
20000
6000
mA
2
OC (1st Tier) Chg Time
U1
0
60
2
sec
3
OC Chg Recovery
I2
-1000
1000
200
mA
5
OC (1st Tier) Dsg
U2
0
20000
6000
mA
7
OC (1st Tier) Dsg Time
U1
0
60
2
sec
8
OC Dsg Recovery
U2
0
1000
200
mA
10
OC (2nd Tier) Chg
U2
0
20000
8000
mA
12
OC (2nd Tier) Chg Time
U1
0
60
2
Sec
13
OC (2nd Tier) Dsg
U2
0
22000
8000
mA
15
OC (2nd Tier) Dsg Time
U1
0
60
2
Sec
16
Current Recovery Time
U1
0
60
8
Sec
17
AFE OC Dsg
H1
0x00
0x1f
0x12
hex
18
AFE OC Dsg Time
H1
0x00
0x0f
0x0f
hex
19
AFE OC Dsg Recovery
U2
10
1000
100
mA
21
AFE SC Chg Cfg
H1
0x00
0xff
0x77
hex
22
AFE SC Dsg Cfg
H1
0x00
0xff
0x77
hex
23
AFE SC Recovery
U2
0
200
1
mA
0
Over Temp Chg
U2
0
1200
550
0.1°C
2
OT Chg Time
U1
0
60
2
Sec
3
OT Chg Recovery
U2
0
1200
500
0.1°C
5
Over Temp Dsg
U2
0
1200
600
0.1°C
7
OT Dsg Time
U1
0
60
2
Sec
8
OT Dsg Recovery
U2
0
1200
550
0.1°C
1st Level
Safety
2
Temperature
1st Level
Safety
3
Host Comm
0
Host Watchdog Timeout
U1
0
255
0
Sec
2nd Level
Safety
16
Voltage
0
SOV Threshold
U2
0
20000
18000
mV
2
SOV Time
U1
0
30
0
Sec
3
Cell Imbalance Current
U1
0
200
5
mA
4
Cell Imbalance Fail Voltage
U2
0
5000
1000
mV
6
Cell Imbalance Time
U1
0
30
0
Sec
7
Battery Rest Time
U2
0
65535
1800
Sec
9
PFIN Detect Time
U1
0
30
0
Sec
0
SOC Chg
U2
0
30000
10000
mA
2
SOC Chg Time
U1
0
30
0
Sec
3
SOC Dsg
U2
0
30000
10000
mA
5
SOC Dsg Time
U1
0
30
0
Sec
0
SOT Chg
U2
0
1200
650
0.1°C
2
SOT Chg Time
U1
0
30
0
Sec
3
SOT Dsg
U2
0
1200
750
0.1°C
5
SOT Dsg Time
U1
0
30
0
Sec
6
Open Thermistor
I2
-1000
1200
-333
0.1°C
8
Open Time
I1
0
30
0
Sec
0
FET Fail Limit
U2
0
500
20
mA
2
FET Fail Time
U1
0
30
0
Sec
0
AFE Check Time
U1
0
255
0
Sec
1
AFE Fail Limit
U1
0
255
10
cnt
2
AFE Fail Recovery Time
U1
0
255
20
Sec
3
AFE Init Retry Limit
U1
0
255
6
num
4
AFE Init Limit
U1
0
255
20
cnt
0
Fuse Fail Limit
U2
0
20
2
mA
2
Fuse Fail Time
U1
0
30
0
Sec
2nd Level
Safety
2nd Level
Safety
17
18
2nd Level
Safety
19
2nd Level
Safety
20
2nd Level
Safety
21
Current
Temperature
FET Verification
AFE Verification
Fuse Verification
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Subclass
ID
Subclass
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
Charge
Control
32
Charge Inhibit
Cfg
0
Chg Inhibit Temp Low
I2
-400
1200
0
0.1°C
2
Chg Inhibit Temp High
I2
-400
1200
450
0.1°C
4
Temp Hys
I2
0
100
10
0.1°C
0
Pre-chg Current
U2
0
2000
250
mA
2
Pre-chg Temp
I2
-400
1200
120
0.1°C
4
Pre-chg Voltage
U2
0
20000
3000
mV
6
Recovery Voltage
U2
0
20000
3100
mV
0
Fast Charge Current
U2
0
10000
4000
mA
2
Charging Voltage
U2
0
20000
16800
mV
4
Over Charging Voltage
U2
0
2000
500
mV
6
Delta Temp
I2
0
500
50
0.1°C
8
Suspend Low Temp
I2
-400
1200
-50
0.1°C
10
Suspend High Temp
I2
-400
1200
550
0.1°C
0
Turn ON Voltage
U2
0
5000
4150
mV
2
Turn OFF Voltage
U2
0
5000
4250
mV
4
Max ON Pulse Time
U1
0
240
240
S/4
5
Min OFF Pulse Time
U1
0
240
0
S/4
6
Max OFF Voltage
U2
0
5000
4270
mV
0
Maintenance Current
U2
0
1000
0
mA
2
Taper Current
U2
0
1000
250
mA
6
Termination Voltage
U2
0
1000
300
mV
8
Current Taper Window
U1
0
60
40
Sec
9
TCA Set %
I1
-1
100
-1
%
10
TCA Clear %
I1
-1
100
95
%
11
FC Set %
I1
-1
100
-1
%
Charge
Control
Charge
Control
Charge
Control
Charge
Control
33
34
35
36
Pre-Charge Cfg
Fast Charge Cfg
Pulse Charge
Cfg
Termination Cfg.
12
FC Clear %
I1
-1
100
98
%
Charge
Control
37
Cell Balancing
Cfg
0
Min Cell Deviation
U2
0
65535
1750
Sec/mAH
Charge
Control
38
Charging Faults
0
Over Charging Voltage
U2
0
3000
500
mV
2
Over Charging Volt Time
U1
0
60
2
Sec
3
Over Charging Current
U2
0
2000
500
mA
5
Over Charging Curr Time
U1
0
60
2
Sec
6
Over Charging Curr Recov
U2
0
2000
100
mA
8
Depleted Voltage
U2
0
16000
8000
mV
10
Depleted Voltage Time
U1
0
60
2
Sec
11
Depleted Recovery
U2
0
16000
8500
mV
13
Over Charge Capacity
U2
0
4000
300
mAh
15
Over Charge Recovery
U2
0
100
2
mAh
17
FC-MTO
U2
0
65535
10800
Sec
19
PC-MTO
U2
0
65535
3600
Sec
21
Charge Fault Cfg
H1
0x00
0xff
0
14
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Subclass
ID
Subclass
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
SBS
Configuration
48
Data
0
Rem Cap Alarm
U2
0
700
300
mAh
2
Rem Time Alarm
U2
0
30
10
Min
4
Init Battery Mode
H2
0x0000
0xffff
0x0081
hex
6
Design Voltage
U2
7000
18000
14400
mV
8
Spec Info
H2
0x0000
0xffff
0x0031
hex
10
Manuf Date
U2
0
65355
0
date
12
Ser. Num.
H2
0x0000
0xffff
0x0001
hex
14
Cycle Count
U2
0
65355
0
cnt
16
CC Threshold
I2
100
32767
4400
mAh
18
CC %
U1
0
100
90
%
19
CF MaxError Limit
U1
0
100
100
%
20
Design Capacity
U2
0
65355
4400
mAh
22
Design Energy
U2
0
65355
6336
10mWh
24
Manuf Name
S12
-
-
Texas Inst.
36
Device Name
S8
-
-
bq20z80
44
Device Chemistry
S5
-
-
LION
0
TDA Set %
I1
-1
100
6
%
1
TDA Clear %
I1
-1
100
8
%
2
FD Set %
I1
-1
100
2
%
3
FD Clear %
I1
-1
100
5
%
4
TDA Set Volt Threshold
U2
0
16800
5000
mV
6
TDA Set Volt Time
U1
0
60
5
Sec
7
TDA Clear Volt
U2
0
16800
5500
mV
9
FD Set Volt Threshold
U2
0
16800
5000
mV
11
FD Volt Time
U1
0
60
5
Sec
12
FD Clear Volt
U2
0
16800
5500
mV
0
Pack Lot Code
H2
0x0000
0xffff
0x0000
2
PCB Lot Code
H2
0x0000
0xffff
0x0000
4
Firmware Version
H2
0x0000
0xffff
0x0000
6
Hardware Revision
H2
0x0000
0xffff
0x0000
8
Cell Revision
H2
0x0000
0xffff
0x0000
SBS
Configuration
System Data
49
56
Configuration
Manufacturer
Data
System Data
58
Manufacturer
Info
0
Manuf. Info
S9
-
-
12345678
System Data
59
LifeTime Data
0
Lifetime Max Temp
I2
0
1400
300
0.1°C
2
Lifetime Min Temp
I2
-600
1400
200
0.1°C
4
Lifetime Max Cell Voltage
U2
0
65535
3500
mV
6
Lifetime Min Cell Voltage
U2
0
65535
3200
mV
8
Lifetime Max Pack Voltage
U2
0
65535
14000
mV
10
Lifetime Min Pack Voltage
U2
0
65535
12800
mV
12
Lifetime Max Chg Current
I2
-32768
32767
1500
mA
14
Lifetime Max Dsg Current
I2
-32768
32767
-3000
mA
16
Lifetime Max Chg Power
I2
-32768
32767
1500
10mW
18
Lifetime Max Dsg Power
I2
-32768
32767
-1500
10mW
22
Life Max AvgDsg Cur
I2
-32768
32767
-1000
mA
26
Life Max AvgDsg Pow
I2
-32768
32767
-1500
10mW
28
Lifetime Avg Temp
I2
0
1400
250
0.1°C
0
LT Temp Samples
U4
0
140000000
0
num
System Data
60
LifeTime Temp
Samples
Submit Documentation Feedback
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Subclass
ID
Subclass
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Configuration
64
Registers
0
Operation Cfg A
H2
0x0000
0xffff
0x0F29
2
Operation Cfg B
H2
0x0000
0xffff
0x6440
4
Permanent Fail Cfg
H2
0x0000
0xffff
0x0000
6
Non-Removable Cfg
H2
0x0000
0xffff
0x0000
hex
0
LED Flash Rate
U2
0
65535
512
500µs
2
LED Blink Rate
U2
0
65535
1024
500µs
4
LED Delay
U2
1
65535
100
500µs
6
LED Hold Time
U1
0
255
4
s
7
CHG Flash Alarm
I1
-1
101
10
%
8
CHG Thresh 1
I1
-1
101
0
%
9
CHG Thresh 2
I1
-1
101
20
%
10
CHG Thresh 3
I1
-1
101
40
%
11
CHG Thresh 4
I1
-1
101
60
%
12
CHG Thresh 5
I1
-1
101
80
%
13
DSG Flash Alarm
I1
-1
101
10
%
14
DSG Thresh 1
I1
-1
101
0
%
15
DSG Thresh 2
I1
-1
101
20
%
16
DSG Thresh 3
I1
-1
101
40
%
17
DSG Thresh 4
I1
-1
101
60
%
18
DSG Thresh 5
I1
-1
101
60
%
0
Flash Update OK Voltage
U2
6000
20000
7500
mV
2
Shutdown Voltage
U2
5000
20000
7000
mV
4
Shutdown Time
U1
0
60
10
Sec
5
Charger Present
U2
0
23000
12000
mV
7
Sleep Current
U2
0
100
10
mA
9
Bus Low Time
U1
0
255
5
Sec
10
Cal Inhibit Temp Low
I2
-400
1200
50
0.1°C
12
Cal Inhibit Temp High
I2
-400
1200
450
0.1°C
14
Sleep Voltage Time
U1
0
100
5
Sec
15
Sleep Current Time
U1
0
255
20
Sec
0
Load Select
U1
0
255
3
num
1
Load Mode
U1
0
255
0
num
45
Term Voltage
I2
-32768
32767
12000
mV
60
User Rate-mA
I2
-9000
-2000
0
mA
62
User Rate-mW
I2
-14000
-3000
0
10mW
64
Reserve Cap-mAh
I2
0
9000
0
mAh
66
Reserve Cap-mWh
I2
0
14000
0
10mWh
0
Dsg Current Threshold
U2
0
2000
100
mA
2
Chg Current Threshold
U2
0
2000
50
mA
4
Quit Current
U2
0
1000
10
mA
6
Dsg Relax Time
U1
0
255
1
Sec
7
Chg Relax Time
U1
0
255
60
Sec
LED Support
Power
Gas Gauging
Gas Gauging
16
67
68
80
81
LED Cfg
Power
IT Cfg
Current
Thresholds
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Subclass
ID
Subclass
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
Gas Gauging
82
State
0
Qmax Cell 0
U2
0
65535
4400
mAh
2
Qmax Cell 1
U2
0
65535
4400
mAh
4
Qmax Cell 2
U2
0
65535
4400
mAh
6
Qmax Cell 3
U2
0
65535
4400
mAh
8
Qmax Pack
U2
0
65535
4400
mAh
12
Update Status
H1
0x00
0x06
0x00
num
21
Avg I Last Run
I2
-32768
32767
-2000
mA
23
Avg P Last Run
I2
-32768
32767
-3022
10mW
25
Delta Voltage
I2
-32768
32767
0
mV
0
Cell0 R_a flag
H2
0x0000
0xffff
0xff55
2
Cell0 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
Cell0 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
Cell0 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
Cell0 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
Cell0 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
Cell0 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
Cell0 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
Cell0 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
Cell0 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
Cell0 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
Cell0 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
Cell0 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
Cell0 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
Cell0 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
Cell0 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
Cell1 R_a flag
H2
0x0000
0xffff
0xff55
2
Cell1 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
Cell1 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
Cell1 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
Cell1 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
Cell1 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
Cell1 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
Cell1 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
Cell1 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
Cell1 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
Cell1 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
Cell1 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
Cell1 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
Cell1 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
Cell1 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
Cell1 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
Cell2 R_a flag
H2
0x0000
0xffff
0xff55
2
Cell2 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
Cell2 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
Cell2 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
Cell2 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
Cell2 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
Cell2 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
Cell2 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
Cell2 R_a 7
I2
-32768
32767
204
mΩ at 0°C
Ra Table
Ra Table
Ra Table
88
89
90
R_a0
R_a1
R_a2
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Ra Table
Ra Table
Ra Table
18
Subclass
ID
91
92
93
Subclass
R_a3
R_a0x
R_a1x
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
18
Cell2 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
Cell2 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
Cell2 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
Cell2 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
Cell2 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
Cell2 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
Cell2 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
Cell3 R_a flag
H2
0x0000
0xffff
0xff55
2
Cell3 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
Cell3 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
Cell3 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
Cell3 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
Cell3 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
Cell3 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
Cell3 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
Cell3 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
Cell3 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
Cell3 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
Cell3 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
Cell3 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
Cell3 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
Cell3 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
Cell3 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
xCell0 R_a flag
H2
0x0000
0xffff
0xffff
2
xCell0 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
xCell0 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
xCell0 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
xCell0 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
xCell0 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
xCell0 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
xCell0 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
xCell0 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
xCell0 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
xCell0 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
xCell0 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
xCell0 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
xCell0 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
xCell0 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
xCell0 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
xCell1 R_a flag
H2
0x0000
0xffff
0xffff
2
xCell1 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
xCell1 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
xCell1 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
xCell1 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
xCell1 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
xCell1 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
xCell1 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
xCell1 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
xCell1 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
xCell1 R_a 9
I2
-32768
32767
254
mΩ at 0°C
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
Ra Table
Ra Table
PF Status
Subclass
ID
94
95
96
Subclass
R_a2x
R_a3x
Device Status
Data
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
Units
22
xCell1 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
xCell1 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
xCell1 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
xCell1 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
xCell1 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
xCell2 R_a flag
H2
0x0000
0xffff
0xffff
2
xCell2 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
xCell2 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
xCell2 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
xCell2 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
xCell2 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
xCell2 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
xCell2 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
xCell2 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
xCell2 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
xCell2 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
xCell2 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
xCell2 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
xCell2 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
xCell2 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
xCell2 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
xCell3 R_a flag
H2
0x0000
0xffff
0xffff
2
xCell3 R_a 0
I2
-32768
32767
160
mΩ at 0°C
4
xCell3 R_a 1
I2
-32768
32767
166
mΩ at 0°C
6
xCell3 R_a 2
I2
-32768
32767
153
mΩ at 0°C
8
xCell3 R_a 3
I2
-32768
32767
151
mΩ at 0°C
10
xCell3 R_a 4
I2
-32768
32767
145
mΩ at 0°C
12
xCell3 R_a 5
I2
-32768
32767
152
mΩ at 0°C
14
xCell3 R_a 6
I2
-32768
32767
176
mΩ at 0°C
16
xCell3 R_a 7
I2
-32768
32767
204
mΩ at 0°C
18
xCell3 R_a 8
I2
-32768
32767
222
mΩ at 0°C
20
xCell3 R_a 9
I2
-32768
32767
254
mΩ at 0°C
22
xCell3 R_a 10
I2
-32768
32767
315
mΩ at 0°C
24
xCell3 R_a 11
I2
-32768
32767
437
mΩ at 0°C
26
xCell3 R_a 12
I2
-32768
32767
651
mΩ at 0°C
28
xCell3 R_a 13
I2
-32768
32767
1001
mΩ at 0°C
30
xCell3 R_a 14
I2
-32768
32767
1458
mΩ at 0°C
0
PF Flags 1
H2
0x0000
0xffff
0x0000
2
Fuse Flag
H2
0x0000
0xffff
0x0000
4
PF Voltage
U2
0
65535
0
mV
6
PF C4 Voltage
U2
0
9999
0
mV
8
PF C3 Voltage
U2
0
9999
0
mV
10
PF C2 Voltage
U2
0
9999
0
mV
12
PF C1 Voltage
U2
0
9999
0
mV
14
PF Current
I2
-32768
32767
0
mA
16
PF Temperature
U2
0
9999
0
0.1°K
18
PF Batt Stat
H2
0x0000
0xffff
0x0000
20
PF RC-mAh
U2
0
65535
0
mAh
22
PF RC-10mWh
U2
0
65535
0
10mWh
24
PF Chg Status
H2
0x0000
0xffff
0x0000
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 3. DATAFLASH VALUES (continued)
Class
PF Status
Calibration
Calibration
Calibration
Calibration
20
Subclass
ID
97
104
105
106
107
Subclass
AFE Regs
Data
Config
Temp Model
Current
Offset
Name
Data
Type
Min Value
Max Value
Default
Value
26
PF Safety Status
H2
0x0000
0xffff
0x0000
28
PF Flags 2
H2
0x0000
0xffff
0x0000
0
AFE Status
H1
0x00
0xffff
0x00
1
AFE Output
H1
0x00
0xffff
0x00
2
AFE State
H1
0x00
0xffff
0x00
3
AFE Function
H1
0x00
0xffff
0x00
4
AFE Cell Select
H1
0x00
0xffff
0x00
5
AFE OLV
H1
0x00
0xffff
0x00
6
AFE OLT
H1
0x00
0xffff
0x00
7
AFE SCC
H1
0x00
0xffff
0x00
8
AFE SCD
H1
0x00
0xffff
0x00
0
CC Gain
F4
1.00E+128
1.00E+128
0.471
num
4
CC Delta
F4
1.00E+128
1.00E+128
140500
num
8
Ref Voltage
I2
0
32767
24500
50µV
10
AFE Corr
U2
0
65535
1288
num
12
AFE Pack Gain
U2
0
65535
30625
num
14
CC Offset
I2
-32768
32767
-12250
num
16
Board Offset
I1
-128
127
0
num
17
Int Temp Offset
I1
-128
127
0
num
18
Ext1 Temp Offset
I1
-128
127
0
num
19
Ext2 Temp Offset
I1
-128
127
0
num
0
CC Current
U2
0
65535
3000
mA
2
Voltage Signal
U2
0
65535
16800
mV
4
Temp Signal
U2
0
65535
2980
0.1°K
6
CC Offset Time
U2
0
65535
250
ms
8
ADC Offset Time
U2
0
65535
32
ms
10
CC Gain Time
U2
0
65535
250
ms
12
Voltage Time
U2
0
65535
1984
ms
14
Temperature Time
U2
0
65535
32
ms
17
Cal Mode Timeout
U2
0
65535
38400
sec/128
0
Ext Coef 1
I2
-32768
32767
-28285
Sec
2
Ext Coef 2
I2
-32768
32767
20848
Sec
4
Ext Coef 3
I2
-32768
32767
-7537
Sec
6
Ext Coef 4
I2
-32768
32767
4012
Sec
8
Ext Min AD
I2
-32768
32767
0
Sec
10
Ext Max Temp
I2
-32768
32767
4012
Sec
12
Int Coef 1
I2
-32768
32767
0
Sec
14
Int Coef 2
I2
-32768
32767
0
Sec
16
Int Coef 3
I2
-32768
32767
-11136
Sec
18
Int Coef 4
I2
-32768
32767
5754
Sec
20
Int Min AD
I2
-32768
32767
0
Sec
22
Int Max Temp
I2
-32768
32767
5754
Sec
0
Filter
U1
0
255
239
mA
1
Deadband
U1
0
255
3
mA
2
CC Deadband
U1
0
255
34
nV+
3
CC Max Deadband
U1
0
255
5
nV+
4
CC Deadband Sample
U2
0
65535
256
num
6
CC Max Offset Sample
U2
0
65535
64
num
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SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Firmware Version Changes
bq20z80-V101 to bq20z80-V102 Changes
Table 4. CHANGE DETAILS
CHANGE
bq0z80-V102
bq20z80-V101
COMMENTS
Corrected to allow display to
turn off when charging and
button pushed.
LED display operates correctly
during charging.
LED display would stay on until
Correct operation of the LED
charging terminated after the button display under all conditions
was pushed. Only occurs when LED
display not configured to be always
on during charging.
Allow negative LED
thresholds to permit LED
alarms to be disabled
Configuring negative LED alarm
threshold disables LED alarm
functionality.
Feature not available
Allow better customization
Allow zero values for ALARM Configuring zero value for the
and CHARGING LED blink
LED blink rates disables them.
rates to disable them
Feature not available
Allow better customization
Restore initialization of
dodcharge initialized to the
dodcharge in relaxed state
correct value
so that the correct dodcharge
value is used in capacity
estimation
dodcharge value set to zero
Improved gauging accuracy with
correct initialization of dodcharge
value.
Only clear offset calibration
flag when SMBus lines go
high.
Prevents offset calibration
occurring just because a safety
condition occurs and then clears
when the SMBus lines are low.
Offset calibration occurs multiple
times if safety condition occurs
when SMBus lines are low.
More appropriate period between
offset calibrations when SMBus
lines are low.
Change so that setting AFE
Fail Limit to zero disables
PF_AFE_C
Configurable option to allow
disabling PF_AFE_C trigger
Feature not available.
Allow better customization
Enable LED display to turn
off after charge termination
and if SMBus lines are
detected low and LEDs
enabled during charging.
LED display turns off after charge LED display stays on when charging Correct operation of the LED
termination.
terminates after SMBus lines are
display under all conditions
detected low.
Set charge FET state
immediately when entering
sleep
Charge FET state set correctly,
immediately after entering sleep
Change DF:Operation Cfg B
[CCT = 0], so that
SBS.CycleCount( ) threshold
is in mAH, not in % of FCC
Data flash default bases
DF:Operation Cfg B [CCT = 1],
SBS.CycleCount( ) calculation on making the default
mAh and not % of FCC
SBS.CycleCount( ) calculation to be
based on % of FCC
Data flash default changed to
reflect common customer usage
When DF:Operation Cfg B
[CCT = 1], so that
SBS.CycleCount( ) threshold
is % of FCC, then DF:CC
Threshold is used as a
minimum for the
SBS.CycleCount( ) threshold
Use DF:CC Threshold as the
Small or negative SBS.Full Charge
minimum to prevent rapid
Capacity( ) values (should not occur
incrementing of the
under normal operation) from
SBS.Cyclecount( ), damaging the causing the SBS.CycleCount( )
data flash
incrementing rapidly, potentially
damaging the data flash
Improved system reliability
When exiting the relaxed
state to sleep, the initial
charge capacity is correctly
calculated
Corrected initial charge capacity
calculation to be accurate when
exiting relaxed state to sleep
More reliable
SBS:FullChargeCapacity( )
calculation under all system
conditions
The CHG FET would not get set to
the correct state for sleep until the
first voltage measurement.
If the relaxed state was exited to
sleep after a valid DOD
measurement (30-minute default
value), then the initial charge
capacity would not be recalculated
and would result in an incorrect FCC
value if the sleep state was exited
before another valid DOD
measurement (30-minute default
value)
Submit Documentation Feedback
Quicker transition of FET to the
correct state in sleep
21
bq20z80-V102
www.ti.com
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 4. CHANGE DETAILS (continued)
CHANGE
Correct update of Remcap in
relaxed state to use passed
charge
bq0z80-V102
Charge or discharge current
accumulated in a relaxed state
used to update Remcap
bq20z80-V101
COMMENTS
If the relaxed state was exited after
the accumulation of significant
charge or discharge current (over at
most 100 seconds with default
values), the RemCap and FCC
would be in error by this charge.
This is only significant if the relaxed
state can exist with significant
current as determined by application
settings.
More reliable
SBS:FullChargeCapacity( )
SBS:RemainingCapacity( )
calculation under all system
conditions
Implement disable of
Prevent invalid soc values from
resistance update based on
causing incorrect resistance
accumulative scale. If the
updates
product of 15 consecutive
(default value) resistance
scale factors is less than 0.5
or more than 1.5, then
resistance update is disabled
until the next valid soc
measurement. Sets bit 2 of
Operation Status to indicate
resistance update disabled.
Incorrect resistance updates that
could result from invalid soc values
More reliable resistance updates
under all system conditions
Implement disable of
Prevent invalid soc values from
resistance update based on
causing incorrect resistance
estimated capacity error.
updates
Sets bit 2 of Operation Status
to indicate resistance update
disabled.
Incorrect resistance updates that
could result from invalid soc values
More reliable resistance updates
under all system conditions
Disable Qmax increment if
due to Grid 14 and exit of
discharge
Prevent unnecessary Qmax
increments
Qmax increments can occur due to
Grid 14 and exit of discharge
Improved Qmax data reliability
under all system conditions.
Drive all unused pins low
Provides better ESD immunity
Not all unused pins driven low
Improved ESD immunity
Initial charge capacity
calculation when dod0 is
measured in the
overdischarged state is
corrected
Overdischarged state does not
affect the accuracy of FCC
calculations
An incorrect initial charge capacity
affects FCC that is calculated during
discharge or a Qmax update. If FCC
is not changed by a Qmax update,
then reported RemainingCapacity
could be negative after 5 hours of
relaxation
More reliable
SBS:FullChargeCapacity( )
SBS:RemainingCapacity( )
calculation under all system
conditions
Correct calculation of FCC
and RemCap when dod0 is
taken when the battery is
overdischarged or
overcharged. This allows
RemCap to go negative, or
greater than FCC (though is
only reported from 0 - FCC).
Overcharged/Overdischarged
does not affect the accuracy of
FCC and RemCap calculations
The RemainingCapacity will
increment (or decrement) during
charging (discharging) even when
the battery is in an overdischarged
(overcharged) state.
More reliable
SBS:FullChargeCapacity( )
SBS:RemainingCapacity( )
calculation under all system
conditions
Change cell imbalance
DF:Battery Rest Time from 1
byte to 2 bytes and set the
default value to 1800
seconds
New feature providing improved
customization
Feature not available
Improved customization for Cell
Imbalance detection
Use upper and lower limit for
resistance accumulative
scale. Set default values to
300% and 30%.
More reliable resistance updates
under all system conditions
Add DF:CF MaxError limit for New feature providing improved
setting SBS.BatteryMode( )
customization
[CONDITION FLAG]. Set
default value to 100%.
22
Feature not available
Submit Documentation Feedback
Improved customization
bq20z80-V102
www.ti.com
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
Table 4. CHANGE DETAILS (continued)
CHANGE
bq0z80-V102
bq20z80-V101
Use SBS.AtRate( ),
UserRate and C/5 rate for
relaxed capacity calculation,
respectively, if set by Load
Select; otherwise, use
previous rate.
COMMENTS
More reliable
SBS:FullChargeCapacity( )
SBS:RemainingCapacity( )
calculation under all system
conditions
Correct Host Watchdog from
being reset by broadcasts
Host Watchdog functionality not
affected by alarm or charger
broadcasts
Host Watchdog reset by alarm or
charger broadcasts
Reliable Host Watchdog
functionality under all system
conditions
The voltage table chemistry
ID can be read by writing
0x0008 to
ManufacturerAccess and
then reading from
ManufacturerAccess. The
default chemistry ID is
0x0100
New feature providing more
information
Feature not available
Improved information access
SBS.BatteryMode( ) is
initialized on high transition
of the SMBus lines to DF:Init
BatteryMode, instead of
always clearing
SBS.BatteryMode( ) defined
bits on high transition of the
SMBus lines.
Customization allows for
preserving SBS.BatteryMode( )
settings through SMBus line
transitions
Feature not available
Improved customization
Broadcast timers are set
correctly on high transition of
SMBus lines. The timers are
set to 10 seconds on high
transition of SMBus lines.
Broadcast timer accurate
regardless of CC offset
calibration or entry to sleep
Broadcast timer accuracy required a Improved broadcast timing
CC offset calibration and entry to
accuracy to meet Smart Battery
sleep.
Data spec
bq20z80 to bq20z80-V101 Changes
CHANGE
bq20z80
bq20z80-V101
COMMENTS
Added authentication (optional SBS
command 0x2f)
Command 0x2f has no function and is Command 0x2f is the
not acknowledged.
SBS.Authenticate( ) command to the
bq20z80 to begin the SHA1
authentication.
Additional feature to enable host to
authenticate the battery
Added Cell Balancing
Cell balancing not available
Added State of Charge cell balancing
algorithm
Additional feature to enable longer
lifetime of battery
Added charge fault FET Enable
register
When charge faults occur, FET action
is taken.
When charge faults occur, FET action
is taken if enabled in DF:FET Enable
register.
Adds flexibility to system interaction
Added pulse compensation for end of
discharge
Applications with pulsed current loads
and minimum voltage requirements
can have less RemainingCapacity
than reported.
The voltage pulses caused by pulsed Added additional feature to improve
current loads are measured and used capacity prediction
to better estimate RemainingCapacity.
Added SBS.BatteryStatus( ) [TDA,
FD] voltage thresholds
SBS.BatteryStatus( ) [TDA, FD] are
only set on SBS.RSOC, detection of
charge termination or faults
SBS.BatteryStatus( ) [TDA, FD] are
now set and cleared based on
SBS.Voltage( )
Adds flexibility to system interaction
Added option for LEDs in series with
current source
LED display is only in parallel.
LED display is available in series
(with current source) or parallel.
Adds capability for higher brightness
LEDs
Configured pin 7 as active high fuse
blow
Pin 7 is not connected.
Pin 7 is now an active high reflection
of SAFE (pin 12).
Adds flexibility to choose different
circuits driven by the permanent
failure signal
Added State of Health calculation
(command 0x4f)
Command 0x4f has no function and is Command 0x4f is the
not acknowledged.
SBS.StateOfHealth( ) command
where SOH is the ratio of
SBS.DesignCapacity( ) to
SBS.FullChargeCapacity( ).
Additional feature to allow host to
easily determine health of the battery
Added Synchronization of
SBS.RemainingCapacity( ) to
SBS.FullChargeCapcity( ) at charge
taper termination.
SBS.RemainingCapacity( ) is not
affected and could be < 100% at
charge termination.
Adds option to enable charge
synchronization in order to display
RelativeStateOfCharge as 100% at
charge termination
If DF:Operation Cfg [RMFCC] is set
then SBS.RemainingCapacity( ) is
updated to the value of
SBS.FullChargeCapcity( ) at charge
termination.
Submit Documentation Feedback
23
bq20z80-V102
www.ti.com
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
CHANGE
bq20z80
bq20z80-V101
COMMENTS
Improved thermal model
A preliminary thermal mode was
used.
An updated thermal model is used.
Improved thermal compensation of
Impedance Track™ algorithm
Improved cell capacity measurement
by limiting valid temperature ranges
Valid voltage measurements for cell
capacity estimation can occur at any
temperature.
Valid voltage measurements for cell
capacity estimation must occur within
a defined temperature range.
Improves capacity estimation
Improved cell capacity measurement
After a full reset, it may take several
minutes for voltage reading to settle
to the most accurate reading.
Settling time of voltage
measurements after a full reset is
reduced.
Improves initial voltage reading
accuracy
Improved default resistance tables
A preliminary default resistance mode
was used.
An updated default resistance mode
is used.
Improved thermal accuracy of
Impedance Track™ algorithm
Prevented lifetime updates until IT is
enabled
Data flash lifetime data is updated
under all conditions.
Data flash lifetime data is not updated
until Impedance Track™ is enabled.
Improves suitability of lifetime data
Aligned SBS.RemainingCapacity( )
with DF:Terminate Voltage
SBS.RemainingCapacity( ) could be
above zero when SBS.Voltage( )
reaches DF:Terminate Voltage.
Forces SBS.RemainingCapacity( ) to
zero when SBS.Voltage( ) is below
terminate voltage
Improves alignment between
reporting and system status
Disabled LEDs for undervoltage
conditions
When SBS.OperationStatus( ) [CUV
or PUV] is set, then the LED display
could be activated.
When SBS.OperationStatus( ) [CUV
or PUV] is set, the LED display is
disabled.
Reduces risk of deeply discharging
the battery
Clear SBS.BatteryStatus( ) [RCA]
when not SBS.BatteryStatus( ) [DSG]
SBS.BatteryStatus( ) [RCA] is not
cleared when SBS.BatteryStatus( )
[DSG] is cleared.
SBS.BatteryStatus( ) [RCA] is now
cleared when SBS.BatteryStatus( )
[DSG] is cleared.
Corrected to meet SBS specification
Allowed sleep mode for undervoltage
conditions
When SBS.OperationStatus( ) [CUV
or PUV] is set, then entry to sleep
mode is disabled.
When SBS.OperationStatus( ) [CUV
or PUV] is set, then entry to sleep
mode is allowed.
Reduces risk of deeply discharging
the battery
Improvements made to Lifetime data
Does not save maximum and
minimum lifetime AverageCurrent or
AveragePower. Only saves lifetime
data when new values exceed old
values by defined delta values
Saves maximum and minimum
lifetime AverageCurrent and
AveragePower. Lifetime data is saved
after a defined period of time even if
new values do not exceed old values
by defined delta values
Improves lifetime data
Changes made to pulse charging
Voltages for pulse charging are
sampled once a second.
Voltages for pulse charging are
sampled 4 times a second.
Improves pulse charging
Changes made to charging timeouts
The precharge timeout timer runs
when the charging current is below a
defined threshold; so, it is possible
that the precharge timer will run
during charging taper current and
cause an undesired precharge
timeout during charging taper.
The fast charge and precharge
timeout timers only run when
precharging or charging, as indicated
by FCHG and PCHG bits in
ChargingStatus.
Improves operation of fast charge and
precharge timeout timers
Changes made to discharge faults
Discharging fault is indicated
whenever BatteryStatus [TDA] is set.
Current discharging fault is not
indicated for current faults detect by
AFE. Separate discharging faults are
indicated for voltage and temperature.
Discharging fault is indicated for any
safety condition resulting in turning off
the discharge FET. Current
discharging fault is indicated for all
detected overcurrent conditions,
including overcurrent detected by
AFE. Temperature and voltage
discharge faults are not indicated
separately.
Improves indication of discharging
fault conditions
Improvements made to calibration
functions
Voltage calibration functions may
cause error in voltage calibration of
several millivolts.
Voltage calibration functions are
capable of accuracy within 1 millivolt.
Improved voltage calibration accuracy
Protect against simultaneous writes to A SMBus-initiated data flash write
A SMBus-initiated data flash write
data flash
may occur at the same time as a data cannot occur at the same time as any
flash write initiated by the AGG, which other data flash write.
my cause a data flash write error.
Increased robustness of data flash
writes
Corrected
SBS.ManufacturerAccess( ) access of
SBS.ManufacturerAccess( ) access of silicon revision is not functional.
silicon revision
SBS.ManufacturerAccess( ) access of Allows host to determine bq20z80
silicon revision is functional.
silicon revision
Corrected data flash checksum
operation
The data flash checksum includes
non-accessible portions of the data
flash that change when writing the
data flash checksum, invalidating the
checksum.
The data flash checksum only
includes data flash that does not
change when writing an updated data
flash checksum.
Data flash checksum operation works
correctly.
Corrections made to LED display
Fixed LED thresholds cannot be
selected.
Fixed LED thresholds can be
selected.
Correct operation of LED threshold
settings
Erroneous readings are corrected that Erroneous SBS voltage, current, and
occurred after offset calibration when temperature readings occur after
sleep mode is not entered.
current offset calibration if sleep mode
is not entered, corrupting the lifetime
data.
24
No erroneous SBS voltage, current,
Improve reliability of lifetime data
and temperature readings occur after
current offset calibration if sleep mode
is not entered.
Submit Documentation Feedback
bq20z80-V102
www.ti.com
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
CHANGE
bq20z80
bq20z80-V101
COMMENTS
Corrected the length of
SBS.ManufacturerData( ) command
SBS.ManufactureData( ) returned
additional data not specified in the
data sheet.
Only returns the appropriate data
Correct data set made available to
host
Changed DF:Charger Present default
voltage to 12000 mV
DF:Charger Present default was
16800 mV.
Default changed to 12000 mV.
More realistic default for most
applications
Corrected LED display lock-up fault
when exiting sleep with LEDs on
LED display locks up if LEDs are ON
as the bq20z80 exits sleep mode.
LED display operates normally
regardless of power state transitions.
Correct operation of the LED display
under all conditions
Added report of any inability to write
DFF as flash write error in calibration
mode
If writing the data flash is not allowed
either due to a permanent failure or
low voltage, then no indication is
given when attempting to write data
flash in calibration mode.
The inability to write data flash in
Improved calibration system
calibration mode is reported as a flash interaction
write error.
Corrected issue of improperly clearing AFE faults were detected and the
AFE faults
pack protected but the fault would be
cleared up to three times at an
interval of 250 milliseconds before the
defined recovery requirements would
apply.
AFE faults are correctly handled,
including the flags.
Modified code to save open-circuit
OCV data was saved after a full reset
voltage (OCV) data on IT enable only, which could have disturbed the OCV
not a full reset
measurements if the battery was not
in a completely relaxed state.
OCV tables are only updated when IT Improved OCV data reliability under
enabled, or the IT enable command is all system conditions
resent.
Corrected range check for calibration
of analog-to-digital converter (ADC)
offset
In calibration mode, if the
measurement ADC offset was out of
range, no error would be reported.
In calibration mode, if the
measurement ADC offset is out of
range, an error is reported.
Improved calibration system
interaction
Implemented a validation time for
DOD0
There is a possibility of erroneous
DOD0 measurement if charge or
discharge current occurs at the same
time.
DOD0 measurement is not saved
unless the battery remains in the
relaxed state for a defined time after
the DOD0 measurement is made.
More reliable
SBS.FullChargeCapacity( ) and
SBS.RemainingCapacity under all
system conditions
Implemented a bounds limit to a
QMAX change
QMAX changes are not limited to
filter-bad readings.
QMAX changes are bounds limited to
filter-bad readings.
More reliable
SBS.FullChargeCapacity( ) and
SBS.RemainingCapacity under all
system conditions
Implemented a double hit for dv/dt
detection for QMAX qualification
The dv/dt qualification for QMAX
update requires only one sample to
be valid.
The dv/dt qualification for QMAX
update requires two samples to be
valid.
More reliable
SBS.FullChargeCapacity( ) and
SBS.RemainingCapacity( ) under all
system conditions
Corrected parameter update issue
caused by exiting sleep mode during
current measurement
If bq20z80 exits sleep during a
current measurement, the SBS
parameters do not update again until
the pack enters and exits sleep mode
again.
SBS parameter updates operate
normally regardless of power state
transitions.
Improved system interaction for sleep
mode transitions
Implemented an option to leave
charge FET on for a nonremovable
pack in sleep mode, enabled by
DF:Operation Cfg B [NRCHG].
When DF:Operation Cfg B [NR] is set, When DF:Operation Cfg B [NR,
then the CHG is turned off at entry to NRCHG] are set, then the CHG
sleep mode.
remains on at entry to sleep mode.
Improved system interaction options
Modified code such that if QMAX has
not been updated, old valid OCV
readings are discarded when a new
valid OCV reading is detected and the
conditions for QMAX update do not
exist.
Valid OCV is only discarded when all
conditions for QMAX update are
satisfied, but the accumulated error in
the measured capacity exceeds 1%
(default value).
If QMAX has been updated, the same
conditions for discarding an OCV
reading are the same as for the
bq20z80. Otherwise, old OCV
readings are discarded and new OCV
readings are used when the
conditions for a valid OCV reading
exist, but the conditions for QMAX
update do not exist.
Enables QMAX measurement for full
charge or discharge for the first
QMAX update, even if initial OCV
measurement is made when battery is
only partially charged.
Modified code such that if QMAX has
not been updated, then for QMAX
update to occur, the measured
capacity must be greater than or
equal to 90% (default value) of design
capacity.
The measured capacity must be
greater than 20% (default value) or a
value as determined from the QMAX
update filter constant for a QMAX
update to occur.
For the first QMAX, the measured
capacity must be greater than 90%
(default value) for a QMAX update to
occur. If QMAX update has occurred
the conditions for measured capacity
are the same as for the bq20z80.
Improved QMAX data reliability for the
first update of QMAX
Default minimum passed charge for
QMAX update has been changed
from 20% to 37%
Internal flash value of Min Passed
Charge is 20%. The default setting for
the QMAX update filter constant of 64
means actual Min Passed Charge for
QMAX update is 25%.
Internal flash value of Min Passed
Charge is 37%. This 37% is
consistent with the QMAX update
filter constant of 96.
Improved QMAX data reliability under
all system conditions.
Default QMAX update filter constant
has been changed from 64 to 94.
Internal flash value of QMAX update
filter is 64.
Internal flash value of QMAX update
filter is 94.
Improved QMAX data reliability under
all system conditions.
DF:Qmax Cell 2..4 are updated to =
DF:Design Capacity if not used when
QMAX is updated.
Ensure all QMAX values are
reasonable, even if not used
QMAX values for nonexistent cells will DF:Qmax Cell 2..4 written with
be updated to Design Capacity.
random values if not used when
QMAX is updated
Submit Documentation Feedback
Improved system interaction when
faults occur
25
PACKAGE OPTION ADDENDUM
www.ti.com
22-Jan-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
BQ20Z80DBT-V102
ACTIVE
SM8
DBT
38
BQ20Z80DBTR-V102
ACTIVE
SM8
DBT
BQ20Z80DBTR-V102G4
ACTIVE
SM8
BQ20ZDBT-V102G4
ACTIVE
BQ20ZDBTR-V102G4
ACTIVE
50
Lead/Ball Finish
MSL Peak Temp (3)
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
38
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
DBT
38
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
SM8
DBT
38
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
SM8
DBT
38
TBD
Call TI
50
Call TI
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
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Addendum-Page 1
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