@vic SOT-23 Plastic-Encapsulate Transistors AV9018LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.2 1. 9 PCM: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=15V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA DC current gain hFE(1) VCE=5V, IC= 1mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V fT Transition frequency DEVICE MARKING VCE=5V, IC= 5mA f=400MHz 70 600 190 MHz S9018LT1= J8 Copyright @vic Electronics Corp. Website http://www.avictek.com