APTGL60TL120T3G VCES = 1200V IC = 60A @ Tc = 80°C Three level inverter Trench + Field Stop IGBT4 Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses • • • • 28 27 26 25 23 22 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant 20 19 18 29 16 30 15 31 14 32 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 80 60 100 ±20 280 Tj = 150°C 100A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A March, 2009 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGL60TL120T3G – Rev 0 Symbol VCES APTGL60TL120T3G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 5.0 1.8 2.2 5.8 Min Typ Max Unit 1 2.2 mA 6.5 400 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 50A TJ = 25°C RG = 8.2Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Junction to Case Thermal Resistance 2770 205 160 pF 0.38 µC 50 27 270 70 ns 50 30 ns 290 80 3.8 5.5 2.5 4.5 mJ 200 A mJ 0.53 °C/W March, 2009 Tr Test Conditions www.microsemi.com 2-6 APTGL60TL120T3G – Rev 0 Symbol Characteristic APTGL60TL120T3G CR1 to CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Test Conditions VR=600V IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Min 1200 Tj = 25°C Tj = 150°C Tc = 80°C Typ Max 100 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 Unit V µA A 3.1 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min 2500 -40 -40 -40 2.5 Typ Max Unit V T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 175 125 100 4.7 110 °C N.m g March, 2009 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight www.microsemi.com 3-6 APTGL60TL120T3G – Rev 0 Symbol VISOL TJ TSTG TC Torque Wt APTGL60TL120T3G SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve VCE=600V D=50% R G=8.2 Ω T J=150°C Tc=75°C 50 40 30 March, 2009 20 Hard switching 10 0 10 20 30 40 50 60 70 80 90 IC (A) www.microsemi.com 4-6 APTGL60TL120T3G – Rev 0 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 APTGL60TL120T3G Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ = 150°C 80 TJ=25°C 60 VGE=19V 60 TJ=150°C IC (A) IC (A) 80 40 VGE=15V 40 20 VGE=9V 20 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 Ω TJ = 150°C 60 12 E (mJ) IC (A) TJ=25°C 16 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 5 6 7 8 9 10 11 12 0 13 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 12 120 100 10 8 6 VCE = 600V VGE =15V IC = 50A TJ = 150°C 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 4 VGE=15V TJ=150°C RG=8.2 Ω 20 0 2 0 10 20 30 Gate Resistance (ohms) 0 40 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 March, 2009 0.5 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGL60TL120T3G – Rev 0 Thermal Impedance (°C/W) 0.6 APTGL60TL120T3G CR1 to CR6 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 2.5 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 0.4 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGL60TL120T3G – Rev 0 Thermal Impedance (°C/W) 1.4