Microsemi APTGL60TL120T3G Three level inverter trench field stop igbt4 Datasheet

APTGL60TL120T3G
VCES = 1200V
IC = 60A @ Tc = 80°C
Three level inverter
Trench + Field Stop IGBT4
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
•
•
•
•
28 27 26 25
23 22
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
20 19 18
29
16
30
15
31
14
32
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1200
80
60
100
±20
280
Tj = 150°C
100A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
March, 2009
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-6
APTGL60TL120T3G – Rev 0
Symbol
VCES
APTGL60TL120T3G
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 1.6mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.8
2.2
5.8
Min
Typ
Max
Unit
1
2.2
mA
6.5
400
V
nA
Max
Unit
V
Q1 to Q4 Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
VGE = 0V
VCE = 25V
f = 1MHz
VGE= ±15V ; VCE=600V
IC=50A
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 50A
RG = 8.2Ω
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 50A
RG = 8.2Ω
TJ = 25°C
VGE = ±15V
VCE = 600V
TJ = 150°C
IC = 50A
TJ = 25°C
RG = 8.2Ω
TJ = 150°C
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
Junction to Case Thermal Resistance
2770
205
160
pF
0.38
µC
50
27
270
70
ns
50
30
ns
290
80
3.8
5.5
2.5
4.5
mJ
200
A
mJ
0.53
°C/W
March, 2009
Tr
Test Conditions
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2-6
APTGL60TL120T3G – Rev 0
Symbol Characteristic
APTGL60TL120T3G
CR1 to CR6 diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
Test Conditions
VR=600V
IF = 30A
IF = 60A
IF = 30A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
di/dt =200A/µs
Err
Reverse Recovery Energy
IF = 30A
VR = 800V
IF = 30A
VR = 800V
Min
1200
Tj = 25°C
Tj = 150°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
30
2.6
3.2
1.8
300
380
360
Tj = 125°C
1700
Tj = 125°C
1.6
Unit
V
µA
A
3.1
V
ns
nC
mJ
di/dt =1000A/µs
RthJC
Junction to Case Thermal Resistance
1.2
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Min
2500
-40
-40
-40
2.5
Typ
Max
Unit
V
T25 = 298.15 K
TC=100°C
RT =
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
Thermal and package characteristics
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
175
125
100
4.7
110
°C
N.m
g
March, 2009
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
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3-6
APTGL60TL120T3G – Rev 0
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTGL60TL120T3G
SP3 Package outline (dimensions in mm)
28
17
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q1 to Q4 Typical performance curve
VCE=600V
D=50%
R G=8.2 Ω
T J=150°C
Tc=75°C
50
40
30
March, 2009
20
Hard
switching
10
0
10
20
30
40
50
60
70
80
90
IC (A)
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4-6
APTGL60TL120T3G – Rev 0
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
APTGL60TL120T3G
Output Characteristics (VGE=15V)
100
Output Characteristics
100
TJ = 150°C
80
TJ=25°C
60
VGE=19V
60
TJ=150°C
IC (A)
IC (A)
80
40
VGE=15V
40
20
VGE=9V
20
0
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
100
VCE = 600V
VGE = 15V
RG = 8.2 Ω
TJ = 150°C
60
12
E (mJ)
IC (A)
TJ=25°C
16
40
3
4
Eon
8
Eoff
TJ=150°C
4
0
0
5
6
7
8
9
10
11
12
0
13
20
40
60
80
100
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
120
100
10
8
6
VCE = 600V
VGE =15V
IC = 50A
TJ = 150°C
80
IC (A)
Eon
E (mJ)
2
VCE (V)
Energy losses vs Collector Current
20
80
20
1
Eoff
60
40
4
VGE=15V
TJ=150°C
RG=8.2 Ω
20
0
2
0
10
20
30
Gate Resistance (ohms)
0
40
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
March, 2009
0.5
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APTGL60TL120T3G – Rev 0
Thermal Impedance (°C/W)
0.6
APTGL60TL120T3G
CR1 to CR6 Typical performance curve
Forward Current vs Forward Voltage
IF, Forward Current (A)
80
TJ=125°C
60
40
20
TJ=25°C
0
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
Switching Energy Losses vs Gate Resistance
2.5
1.8
2
1.6
1.4
1.5
E (mJ)
E (mJ)
Energy losses vs Collector Current
VCE = 800V
VGE = 15V
RG = 5Ω
TJ = 125°C
1
0.5
20
40
60
VCE = 800V
VGE =15V
IC = 30A
TJ = 125°C
1
0.8
0
0
1.2
0.6
80
0
10
IC (A)
20
30
Gate resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.8
0.9
0.7
0.5
0.6
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
March, 2009
0.4
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGL60TL120T3G – Rev 0
Thermal Impedance (°C/W)
1.4
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