polyfet rf devices F1060 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 8 Watts Single Ended Package Style AP TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 3.5 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 2 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 8WATTS OUTPUT ) MAX 11 45 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.2 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.2 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.2 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat MIN TYP MAX 65 1 UNITS TEST CONDITIONS V Ids = 0.05 A, Vgs = 0V 1 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.1 A, Vgs = Vds 0.8 Mho Vds = 10V, Vgs = 5V 1 Ohm Vgs = 20V, Ids = 4 A Saturation Curren 5.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 4 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1060 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1060 POUT VS PIN F=500 MHZ; IDQ=0.2A; VDS=28.0V F1B 1 DIE Capacitance vs Vds 20 13 18 100 12 16 Coss 11 14 12 Ciss 10 10 9 8 6 10 Crss 8 Efficiency = 55% 4 7 2 6 0 0 0.5 1 1.5 2 2.5 3 3.5 1 PIN IN WATTS 0 POUT 5 10 GAIN 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1B 1DIE IV CURVE F1B 1 DIE GM & ID vs VG 6 10 Id 5 4 1 3 2 Gm 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 0.01 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com