ASI ALR325 Npn silicon rf power transistor Datasheet

ALR325
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG(A)
DESCRIPTION:
A
4x .062 x 45°
The ASI ALR325 is Designed for
1200 – 1400 MHz, L-Band Applications.
2xB
C
F
E
D
G
FEATURES:
L
N
18.75 A
PDISS
55 V
TSTG
-65 °C to +200 °C
θJC
0.10 °C/W
inches / m m
inches / m m
.135 / 3.43
.145 / 3.68
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
D
.376 / 9.55
E
.110 / 2.79
.130 / 3.30
F
.395 / 10.03
.407 / 10.34
M A XIM UM
.396 / 10.06
.193 / 4.90
.490 / 12.45
.510 / 12.95
.100 / 2.54
I
J
.690 / 17.53
.710 / 18.03
K
.890 / 22.61
.910 / 23.11
L
.003 / 0.08
.006 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
ORDER CODE: ASI10516
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
M IN IM UM
A
G
730 W @ TC = 25 °C
CHARACTERISTICS
DIM
H
-65 °C to +250 °C
TJ
P
M
MAXIMUM RATINGS
VCC
2xR
H
J
K
I
• Internal Input/Output Matching Network
• PG = 6.5 db at 325 W/1400 MHz
• Omnigold™ Metalization System
IC
.040 x 45°
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCES
IC = 50 mA
65
V
BVEBO
IE = 15 mA
3.0
V
ICES
VCE = 50 V
hFE
VCE = 5.0 V
IC = 5.0 A
PG
ηC
VCC = 45 V
POUT = 325 W
10
f = 1.2 to 1.4 GHz
6.5
38
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
30
mA
---
--dB
%
REV. B
1/1
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