TSC ES2B 2.0 amps. surface mount super fast rectifier Datasheet

ES2A - ES2J
2.0 AMPS. Surface Mount Super Fast Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
O
260 C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.209(5.30)
.201(5.10)
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packing: 12mm tape per EIA STD RS-481
Weight: 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 O C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES
Type Number
2A
2B
2C
Maximum Recurrent Peak Reverse
50 100 150
V RRM
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current See Fig. 1
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
o
@T A =25 C at Rated DC Blocking Voltage
o
@ T A =100 C
Maximum Reverse Recovery Time
( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes:
ES
2D
200
ES
2F
300
ES
2G
400
ES
2H
500
ES
2J
600
Units
V
V RMS
35
70
105
140
210
280
350
420
V
V DC
50
100
150
200
300
400
500
600
V
I(AV)
2.0
A
IFSM
50
A
VF
0.95
1.3
1.7
V
IR
10
350
uA
uA
Trr
35
nS
Cj
R θJA
R θJL
TJ
25
20
75
20
-55 to +150
-55 to +150
T STG
1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A
2. Measured at 1 MHz and Applied V R =4.0 Volts
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas
pF
o
C /W
o
o
C
C
Version: A06
RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2J)
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
RESISTIVE OR
INDUCTIVE LOAD
0.4X0.4"(10X10mm)
COPPER PAD AREAS
INSTANTANEOUS REVERSE CURRENT. ( A)
AVERAGE FORWARD CURRENT. (A)
3.0
2.0
1.0
0
80
90
100
110
120
130
140
150
o
LEAD TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
Tj=125 0C
10
Tj=85 0C
1
Tj=25 0C
0.1
8.3ms Single Half Sine Wave
o
(JEDEC Method) at TL=120 C
50
0.01
0
40
60
80
100
120
140
40
30
20
60
10
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
0
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
40
ES
30
20
ES
2F
2A
-D
-D
-G
2F
-J
1
ES
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
50
ES
FIG.4- TYPICAL JUNCTION CAPACITANCE
60
10
2A
NUMBER OF CYCLES AT 60Hz
ES
INSTANTANEOUS FORWARD CURRENT. (A)
100
10
1
JUNCTION CAPACITANCE.(pF)
20
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
2H
PEAK FORWARD SURGE CURRENT. (A)
60
0.1
-J
10
0
0
1
100
10
0.01
0.4
0.6
0.8
REVERSE VOLTAGE. (V)
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06
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