CF2N60I 2-DRAIN 漏极 DESCRIPTION 1-GATE 栅极 • Electronic Ballast • Electronic Transformer • Switch Mode Power Supply 3-SOURCE 源极 FEATURES • • • • Low Thermal Resistance High Iput Resistance Fast Switching ROHS Compliant I-PAK ■ MAXIMUM RATINGS（Tc=25℃) PARAMETER SYMBOL VALUE UNIT Drain-source Voltage VDS 600 V gate-source Voltage VGS ±30 V Continuous Drain Current(TC=25℃) ID 2 A Drain Current-Pulsed IDM 8 A Total Dissipation PD 44 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-150 ℃ Single Pulse Avalanche Energy EAS 120 mJ ■ ELECTRONIC CHARACTERISTICS（Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN Drain-source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 Gate Threshold Voltage VGS(TH) VGS=VDS ,ID=250μA 2 Drain-source Leakage Current IDSS Drain-Source Diode Forward Voltage Gate-body Leakage Current (VDS = 0) Forward Transconductance Static Drain-source On Resistance Thermal Resistance Junction-case V1.1 14-01 MAX UNIT V 4 V VDS=600V,VGS=0V 25 uA VSD VGS=0V，IS=2A 1.4 V IGSS VGS=±30V ±100 nA gfs Vds=10V Id=1A RDS(ON) VGS=10V,ID=1A RthJ-c http://ctc-semicon.com 0.5 S 5 Ω 2.87 ℃/W P1/5 CF2N60I ■ DYNAMIC CHARACTERISTICS（Tc=25℃) CHARACTERISTICS SYMBOL Input Capacitance Ciss output Capacitance Coss TEST CONDITION VDS=25V,VGS=0V, MIN TYP MAX UNIT - 295 330 pF - 45 55 pF - 4.5 7 pF MIN TYP MAX UNIT - 10 28 ns - 25 55 ns - 24 50 ns f=1.0MHZ Reverse Transfer Capacitance Crss ■ SWITCHING CHARACTERISTICS（Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Rise Time tf - 25 60 ns Total Gate Charge Qg - 6.8 12 nC Gate-Source Charge Qgs - 2 - nC Gate-Drain Charge Qgd - 1.8 - nC VDD=300V,ID=2A, RG=25Ω VDS=480V，ID=2A, VGS=10V ■ DRAIN-SOURCE DIODE MAXIMUM RATINGS AND CHARACTERISTICS（Tc=25℃) CHARACTERISTICS SYMBOL Max. Diode Forward Cuurent Max. Pulsed Forward Cuurent MIN TYP MAX UNIT Is - - 2 A ISM - - 8 A - - 1.4 V - 380 - ns - 0.9 - μC Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr V1.1 14-01 TEST CONDITION VGS=0V,IS=2A VGS=0V,IS=2A, dIF/dt=100A/μs http://ctc-semicon.com P2/5 CF2N60I ■ CHARACTERISTICS CURVE Output Characterisic Transfer Characterisic On Resistance Vs Drain Current On Resistance Vs Gate Source Voltage On Resistance Vs Junction Temperature Capacitance V1.1 14-01 http://ctc-semicon.com P3/5 CF2N60I ■ CHARACTERISTICS CURVE Gate Charge Waveform Source-Drain Diode Forward Voltage Breakdown Voltage Vs Junction Temperature V1.1 14-01 http://ctc-semicon.com P4/5 CF2N60I I-PAK MECHANICAL DATA UNIT：mm SYMBOL MIN A MAX SYMBOL MIN 2.10 2.50 D1 5.10 5.50 A1 0.95 1.30 E 5.80 6.30 B 0.80 1.25 e 2.25 b 0.50 0.80 L 7.70 8.50 b1 0.70 0.90 L1 1.45 1.95 C 0.45 0.60 R C1 0.45 0.60 D 6.35 6.75 V1.1 14-01 NOM http://ctc-semicon.com NOM 2.30 MAX 2.35 0.30 P5/5