DU2880U RF Power MOSFET Transistor 80W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 16 A Power Dissipation PD 206 W Junction Temperature TJ 200 °C Storage Temperature TSTG -65 to +150 °C θJC 0.85 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) LETTER 30 5.4 - j4.4 5.7 +j4.7 DIM MIN MAX MIN MAX 50 2.5 - j4.4 3.4 + j3.5 A 24.64 24.89 .970 .980 100 1.6 - j3.4 2.4 + j2.4 B 18.29 18.54 .720 .730 175 0.7 - j1.2 1.7 + j0.8 C 25.91 26.42 1.020 1.040 D 12.60 12.85 .496 .506 E 6.22 6.48 .245 .255 F 5.59 5.84 .220 .230 G 3.05 3.30 .120 .130 H 2.21 2.59 .087 .102 J 3.91 4.42 .154 .174 K 6.53 7.34 .257 .289 L .10 .15 .004 .006 VDD = 28V, IDQ = 400mA, POUT = 80 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Max Units MILLIMETERS Symbol Min BVDSS 65 - V VGS = 0.0 V , IDS = 20.0 mA IDSS - 4.0 mA VGS = 28.0 V , VGS = 0.0 V INCHES Test Conditions IGSS - 4.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 400.0 mA GM 2.0 - S VDS = 10.0 V , IDS = 4.0 A , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 180 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 160 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 32 pF VDS = 28.0 V , F = 1.0 MHz GP 13 - dB VDD = 28.0 V, IDQ = 400 mA, POUT = 80.0 W F =175 MHz ŋD 60 - % VDD = 28.0 V, IDQ = 400 mA, POUT = 80.0 W F =175 MHz VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 400 mA, POUT = 80.0 W F =175 MHz Gate Threshold Voltage Forward Transconductance Power Gain Drain Efficiency Load Mismatch Tolerance 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. DU2880U RF Power MOSFET Transistor 80W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=400 mA POUT=80 W 25 EFFICIENCY (%) GAIN (dB) 80 EFFICIENCY VS FREQUENCY VDD=28 V IDQ=400 mA POUT=80 W 70 60 20 15 10 50 50 25 100 150 25 175 50 FREQUENCY (MHz) 120 100 150 175 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =400 mA 120 POWER OUTPUT VS SUPPLY VOLTAGE IDQ =400 mA F=175MHz PIN =3.0 W 100 175MHz 100MHz 80 POWER OUTPUT (W) POWER OUTPUT (W) 30MHz 60 40 20 0 0.1 0.2 0.3 1 2 POWER INPUT (W) 3 4 100 80 60 40 20 0 5 13 15 20 25 30 SUPPLY VOLTAGE (V) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 33 DU2880U RF Power MOSFET Transistor 80W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.