POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE ARF370 Repetitive voltage up to Mean forward current Surge current 4500 V 485 A 4 kA FINAL SPECIFICATION feb 97 - ISSUE : 04 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 4500 V V RSM Non-repetitive peak reverse voltage 150 4600 V I RRM Repetitive peak reverse current 150 50 mA V=VRRM CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 485 A I F (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 490 A I FSM Surge forward current Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 150 4 kA Forward current = 1200 25 3.4 V V I² t I² t V FM Forward voltage V F(TO) Threshold voltage 150 1.74 r F Forward slope resistance 150 1.700 A 80 x1E3 A²s mohm SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge I rr Peak reverse recovery current s Softness (s-factor), min V FR IF= 1000 A di/dt= 100 A/µs VR = 100 V 150 5 µs 700 µC 280 A 0.5 Peak forward recovery di/dt= 400 A/µs 150 80 V 52 °C/kW MOUNTING R th(j-h) Thermal impedance T Operating junction temperature -30 / 150 °C Mounting force 8.4 / 9.4 kN F j Junction to heatsink, double side cooled Mass 280 ORDERING INFORMATION : ARF370 S 45 standard specification VRRM/100 g ARF370 FAST RECOVERY DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION feb 97 - ISSUE : 04 DISSIPATION CHARACTERISTICS SQUARE WAVE 2000 DC 1800 120° Power Dissipation [W] 1600 180° 90° 1400 60° 1200 30° 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 Mean Forward Current [A] SINE WAVE 2000 180° 1800 90° Power Dissipation [W] 1600 120° 60° 1400 30° 1200 1000 800 600 400 200 0 0 100 200 300 400 Mean Forward Current [A] 500 600 700 ARF370 FAST RECOVERY DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION feb 97 - ISSUE : 04 SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 180 160 Tj 150 °C 140 VFR [V] 120 100 80 IF VFR 60 Tj = 25 °C 40 VF 20 0 0 200 400 600 800 1000 1200 di/dt [A/µs] REVERSE RECOVERY CURRENT - Tj = 150° REVERSE RECOVERY CHARGE - Tj = 150° 800 1400 1000 A 600 1000 500 A 500 500 A 800 Irr [A] Qrr [µC] 1000 A 700 1200 250 A 400 600 300 250 A 400 200 200 100 0 0 0 100 200 300 400 0 100 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta 200 300 400 di/dt [A/µs] IF d i/d t ta tb Softness (s factor) s = tb / ta 25% di Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr ARF370 FAST RECOVERY DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION feb 97 - ISSUE : 04 SURGE CHARACTERISTIC Tj = 150 °C 1600 4.5 1400 4 3.5 1200 3 1000 ITSM [kA] Forward Current [A] FORWARD CHARACTERISTIC Tj = 150 °C 800 600 2.5 2 1.5 400 1 200 0.5 0 0 1.5 2.5 3.5 1 4.5 10 n° cycles Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 60.0 Zth j-h [°C/kW] 50.0 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100