SPANSION AM29F010B-45EI 1 megabit (128 k x 8-bit) cmos 5.0 volt-only, uniform sector flash memory Datasheet

Am29F010B
Data Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number Am29F010B_00
Revision C
Amendment 7
Issue Date October 31, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29F010B
1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
■ Manufactured on 0.32 µm process technology
— Compatible with Am29F010 and Am29F010A
device
■ High performance
— 45 ns maximum access time
■ Low power consumption
■ Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ Erase Suspend/Resume
— Supports reading data from a sector not
being erased
— 12 mA typical active read current
■ Minimum 1 million erase cycles guaranteed per
sector
— 30 mA typical program/erase current
■ 20-year data retention at 125°C
— <1 µA typical standby current
■ Flexible sector architecture
— Reliable operation for the life of the system
■ Package options
— Eight 16 Kbyte sectors
— 32-pin PLCC
— Any combination of sectors can be erased
— 32-pin TSOP
— Supports full chip erase
— 32-pin PDIP
■ Sector protection
— Hardware-based feature that disables/reenables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■ Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication # Am29F010B_00 Revision: C
Amendment: 7 Issue Date: October 31, 2006
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29F010B is a 1 Mbit, 5.0 Volt-only Flash
memory organized as 131,072 bytes. The Am29F010B
is offered in 32-pin PDIP, PLCC and TSOP packages.
The byte-wide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the
standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not
required for program or erase operations. The device can
also be programmed or erased in standard EPROM
programmers.
This device is manufactured using AMD’s 0.32 µm process technology, and offers all the features and benefits
of the Am29F010 and Am29F010A.
The standard device offers access times of 45, 55, 70,
90, and 120 ns, allowing high-speed microprocessors
to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This invokes the Embedded Program algorithm—an internal algorithm that
2
automatically times the program pulse widths and
verifies proper cell margin.
Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The hardware data protection measures include a
low VCC detector automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of the sectors of memory, and is implemented using standard EPROM programmers.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h i g h e s t l eve l s o f q u a l i t y, r e l i a b i l i t y, a n d c o s t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
TABLE OF CONTENTS
General Description . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 6
Standard Products .................................................................... 6
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 7
Table 1. Am29F010B Device Bus Operations .................................7
Requirements for Reading Array Data ..................................... 7
Writing Commands/Command Sequences .............................. 7
Program and Erase Operation Status ...................................... 8
Standby Mode .......................................................................... 8
Output Disable Mode ................................................................ 8
Table 2. Am29F010B Sector Addresses Table .................................8
Autoselect Mode ....................................................................... 8
Table 3. Am29F010B Autoselect Codes (High Voltage Method) ......9
Sector Protection/Unprotection ................................................. 9
Hardware Data Protection ........................................................ 9
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 10
Reading Array Data ................................................................ 10
Reset Command ..................................................................... 10
Autoselect Command Sequence ............................................ 10
Byte Program Command Sequence ....................................... 10
Figure 1. Program Operation ..........................................................11
Chip Erase Command Sequence ........................................... 11
Sector Erase Command Sequence ........................................ 11
Erase Suspend/Erase Resume Commands ........................... 12
Figure 2. Erase Operation ...............................................................12
Table 4. Am29F010B Command Definitions ...................................13
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 14
DQ7: Data# Polling ................................................................. 14
Reading Toggle Bit DQ6 ......................................................... 15
Figure 4. Toggle Bit Algorithm ........................................................ 15
DQ5: Exceeded Timing Limits ................................................ 15
DQ3: Sector Erase Timer ....................................................... 16
Table 5. Write Operation Status ..................................................... 16
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 17
Figure 5. Maximum Negative Overshoot Waveform ...................... 17
Figure 6. Maximum Positive Overshoot Waveform ........................ 17
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 17
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 18
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7. Test Setup ....................................................................... 20
Table 6. Test Specifications ........................................................... 20
Key to Switching Waveforms . . . . . . . . . . . . . . . 20
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 8. Read Operations Timings ............................................... 21
Erase and Program Operations .............................................. 22
Figure 9. Program Operation Timings ............................................ 23
Figure 10. Chip/Sector Erase Operation Timings .......................... 23
Figure 11. Data# Polling Timings (During Embedded Algorithms) . 24
Figure 12. Toggle Bit Timings (During Embedded Algorithms) ...... 24
Erase and Program Operations .............................................. 25
Figure 13. Alternate CE# Controlled Write Operation Timings ...... 26
Erase and Programming Performance . . . . . . . 26
Latchup Characteristic . . . . . . . . . . . . . . . . . . . . 27
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . 27
PLCC and PDIP Pin Capacitance . . . . . . . . . . . . 27
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 28
PD 032—32-Pin Plastic DIP ................................................... 28
PL 032—32-Pin Plastic Leaded Chip Carrier ......................... 29
TS 032—32-Pin Standard Thin Small Outline Package ......... 30
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 3. Data# Polling Algorithm ...................................................14
DQ6: Toggle Bit I .................................................................... 14
October 31, 2006 Am29F010B_00_C7
Am29F010B
3
D A T A
S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Option
Am29F010B
VCC = 5.0 V ± 5%
-45
VCC = 5.0 V ± 10%
-55
-70
-90
-120
Max Access Time (ns)
45
55
70
90
120
CE# Access (ns)
45
55
70
90
120
OE# Access (ns)
25
30
30
35
50
Note: See the AC Characteristics section for full specifications.
BLOCK DIAGRAM
DQ0–DQ7
VCC
VSS
WE#
Input/Output
Buffers
Erase Voltage
Generator
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A16
4
Am29F010B
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
CONNECTION DIAGRAMS
A16
2
31
WE#
A15
3
30
NC
A12
4
29
A14
A7
5
29
A14
A7
5
28
A13
A6
6
28
A13
A6
6
27
A8
A5
7
27
A5
7
26
A9
A4
8
26
A8
A9
A4
25
A11
A3
9
25
A11
A3
8 PDIP
9
24
OE#
A2
10
24
OE#
A2
10
23
A10
A1
11
23
A10
CE#
A0
12
22
DQ0
13
21
CE#
DQ7
12
21
DQ7
DQ0
13
20
DQ6
DQ1
14
19
DQ5
DQ2
15
18
DQ4
VSS
16
17
DQ3
A11
A9
A8
A13
A14
NC
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Standard TSOP
PIN CONFIGURATION
A0–A16
NC
14 15 16 17 18 19 20
DQ5
DQ6
A0
DQ4
22
VSS
DQ3
11
1 32 31 30
PLCC
DQ1
DQ2
A1
4 3 2
WE#
NC
VCC
VCC
32
A16
1
A12
A15
NC
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
LOGIC SYMBOL
= 17 Addresses
DQ0–DQ7 = 8 Data Inputs/Outputs
17
CE#
= Chip Enable
OE#
= Output Enable
WE#
= Write Enable
VCC
= +5.0 Volt Single Power Supply
(See Product Selector Guide for speed
options and voltage supply tolerances)
VSS
= Device Ground
NC
= Pin Not Connected Internally
October 31, 2006 Am29F010B_00_C7
A0–A16
8
DQ0–DQ7
CE#
Am29F010B
OE#
WE#
5
D A T A
S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the elements below.
Am29F010B
70
E
C
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
E
= Extended (–55°C to +125°C)
D
= Commerical (0°C to +70°C) with Pb-free Package
F
= Industrial (-40°C to +85°C) with Pb-free Package
K
= Extended (-55°C to +125°C) with Pb-free Package
PACKAGE TYPE
P
= 32-Pin Plastic PDIP (PD 032)
J
= 32-Pin Rectangular Plastic Leaded Chip Carrier (PL 032)
E
= 32-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F010B
1 Megabit (128 K x 8-Bit) CMOS Flash Memory
5.0 Volt-only Read, Program, and Erase
Valid Combinations
Am29F010B-45
Am29F010B-55
Am29F010B-70
Am29F010B-90
Am29F010B-120
6
Valid Combinations
VCC Voltage
PC, PI, PE
JC, JI, JE,
EC, EI, EE,
ED, EF, EK
PD, PF, PK
JD, JF, JK
5.0 V ± 5%
PC, PI, PE
JC, JI, JE,
EC, EI, EE,
ED, EF, EK
PD, PF, PK
JD, JF, JK
5.0 V ± 10%
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memor y
location. The register is composed of latches that store
the commands, along with the address and data information needed to execute the command. The contents
of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe
each of these operations in further detail.
Table 1. Am29F010B Device Bus Operations
CE#
OE#
WE#
Addresses
(Note 1)
DQ0–DQ7
Read
L
L
H
AIN
DOUT
Write
L
H
L
AIN
DIN
VCC ± 0.5 V
X
X
X
High-Z
Output Disable
L
H
H
X
High-Z
Hardware Reset
X
X
X
X
High-Z
Operation
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Addresses In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A16:A0.
2. The sector protect and sector unprotect functions must be implemented via programming equipment. See the “Sector Protection/Unprotection” section.
Requirements for Reading Array Data
Writing Commands/Command Sequences
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE# should
remain at VIH.
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the
device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for
the timing waveforms. ICC1 in the DC Characteristics
table represents the active current specification for
reading array data.
October 31, 2006 Am29F010B_00_C7
An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables
indicate the address space that each sector occupies.
A “sector address” consists of the address bits required
to uniquely select a sector. See the “Command Definitions” section for details on erasing a sector or the
entire chip.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Am29F010B
7
D A T A
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation
Status” for more information, and to each AC Characteristics section in the appropriate data sheet for timing
diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, independent of the OE# input.
S H E E T
The device enters the CMOS standby mode when the
CE# pin is held at VCC ± 0.5 V. (Note that this is a more
restricted voltage range than VIH.) The device enters
the TTL standby mode when CE# is held at VIH. The
device requires the standard access time (tCE) before it
is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics tables represents the
standby current specification.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Table 2. Am29F010B Sector Addresses Table
Sector
A16
A15
A14
Address Range
SA0
0
0
0
00000h-03FFFh
SA1
0
0
1
04000h-07FFFh
SA2
0
1
0
08000h-0BFFFh
SA3
0
1
1
0C000h-0FFFFh
SA4
1
0
0
10000h-13FFFh
SA5
1
0
1
14000h-17FFFh
SA6
1
1
0
18000h-1BFFFh
SA7
1
1
1
1C000h-1FFFFh
Note: All sectors are 16 Kbytes in size.
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect
mode requires VID on address pin A9. Address pins A6,
A1, and A0 must be as shown in Autoselect Codes
(High Voltage Method) table. In addition, when verifying
8
sector protection, the sector address must appear on
the appropriate highest order address bits. Refer to the
corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that
are don’t care. When all necessary bits have been set
as required, the programming equipment may then
read the corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in the Command Definitions table. This method does not require VID. See
“Command Definitions” for details on using the autoselect mode.
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
Table 3.
S H E E T
Am29F010B Autoselect Codes (High Voltage Method)
CE#
OE#
WE#
A16
to
A14
Manufacturer ID: AMD
L
L
H
X
X
VID
X
L
X
L
L
01h
Device ID: Am29F010B
L
L
H
X
X
VID
X
L
X
L
H
20h
Description
A13
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
01h
(protected)
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
00h
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 22337. Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
gramming, which might otherwise be caused by
spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Hardware Data Protection
Power-Up Write Inhibit
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
October 31, 2006 Am29F010B_00_C7
Am29F010B
9
D A T A
S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device
operations. The Command Definitions table defines the
valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence resets the device to reading array
data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parameters, and Read Operation Timings diagram shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data. Once programming begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data.
10
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h or retrieves the manufacturer code. A read cycle at address XX01h returns
the device code. A read cycle containing a sector address (SA) and the address 02h in returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
the Sector Address tables for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the programmed cell margin. The Command Definitions take
shows the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can
determine the status of the program operation by using
DQ7or DQ6. See “Write Operation Status” for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no
longer latched.
START
Figure 2 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector
Erase Operation Timings for timing waveforms.
Write Program
Command Sequence
Sector Erase Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See the appropriate Command Definitions table for
program command sequence.
Figure 1.
Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. The Command
Definitions table shows the address and data requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored.
The system can determine the status of the erase operation by using DQ7 or DQ6. See “Write Operation
Status” for information on these status bits. When the
October 31, 2006 Am29F010B_00_C7
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. The Command Definitions table
shows the address and data requirements for the sector erase command sequence.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional sector erase commands can be assumed to be less than
50 µs, the system need not monitor DQ3. Any command during the time-out period resets the device
to reading array data. The system must rewrite the
command sequence and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6. Refer
to “Write Operation Status” for information on these
status bits.
Am29F010B
11
D A T A
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase
Suspend command.
S H E E T
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
START
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately terminates the time-out period and suspends the erase
operation.
Write Erase
Command Sequence
Data Poll
from System
After the erase operation has been suspended, the
system can read array data from any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Normal read and write
timings and command definitions apply. Reading at any
address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7 to
determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status” for information
on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See “Wr ite Operation Status” for more
information.
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
12
Embedded
Erase
algorithm
in progress
Am29F010B
Figure 2.
Erase Operation
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
Command Definitions
Table 4.
Am29F010B Command Definitions
Bus Cycles (Notes 2-3)
Cycles
Command
Sequence
(Note 1)
Addr
Read (Note 4)
1
RA
RD
Reset (Note 5)
1
XXXX
F0
Reset (Note 6)
3
555
AA
2AA
55
555
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID
4
555
AA
2AA
55
555
90
X01
20
Sector Protect Verify
(Note 8)
555
AA
2AA
55
555
90
(SA)
X02
00
4
Autoselect
(Note 7)
First
Second
Data
Third
Addr
Data
Addr
Fourth
Data Addr
Data
Fifth
Sixth
Addr Data
Addr
Data
01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 9)
1
XXX
B0
Erase Resume (Note 10)
1
XXX
30
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
RA = Address of the memory location to be read.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A14 uniquely select any sector.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
1. See Table 1 for description of bus operations.
7. The fourth cycle of the autoselect command sequence is a
read operation.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all command
bus cycles are write operations.
4. No unlock or command cycles required when reading array
data.
5. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
6. The device accepts the three-cycle reset command
sequence for backward compatibility.
October 31, 2006 Am29F010B_00_C7
8. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
9. The system may read in non-erasing sectors, or enter the
autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation.
10. The Erase Resume command is valid only during the Erase
Suspend mode.
Am29F010B
13
D A T A
S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: DQ3, DQ5, DQ6, and DQ7.
Table 5 and the following subsections describe the
functions of these bits. DQ7 and DQ6 each offer a
method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
START
Read DQ7–DQ0
Addr = VA
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or
completed. Data# Polling is valid after the rising edge
of the final WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. When the Embedded Program
algorithm is complete, the device outputs the datum
programmed to DQ7. The system must provide the program address to read valid status information on DQ7.
If a program address falls within a protected sector,
Data# Polling on DQ7 is active for approximately 2 µs,
then the device returns to reading array data.
DQ7 = Data?
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase algorithm is complete, Data# Polling produces a “1” on
DQ7. This is analogous to the complement/true datum
output described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected.
Yes
DQ7 = Data?
Yes
No
PASS
FAIL
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. The Data# Polling Timings (During Embedded Algorithms) figure in
the “AC Characteristics” section illustrates this.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Table 5 shows the outputs for Data# Polling on DQ7.
Figure 3 shows the Data# Polling algorithm.
DQ6: Toggle Bit I
14
Figure 3.
Data# Polling Algorithm
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE# pulse in the com-
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
mand sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
START
Read DQ7–DQ0
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 μs, then returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.
Read DQ7–DQ0
(Note 1)
Toggle Bit
= Toggle?
No
Yes
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 4 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the
“AC Characteristics” section for the timing diagram.
No
DQ5 = 1?
Yes
Reading Toggle Bit DQ6
Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, a
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system
must write the reset command to return to reading
array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
October 31, 2006 Am29F010B_00_C7
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
(Notes
1, 2)
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 4. Toggle Bit Algorithm
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
Am29F010B
15
D A T A
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire timeout also applies after each additional sector erase command. When the time-out is complete, DQ3 switches
from “0” to “1.” The system may ignore DQ3 if the sys-
Table 5.
S H E E T
tem can guarantee that the time between additional
sector erase commands will always be less than 50 μs.
See also the “Sector Erase Command Sequence”
section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands are ignored until the
erase operation is complete. If DQ3 is “0”, the device
will accept additional sector erase commands. To ensure the command has been accepted, the system
software should check the status of DQ3 prior to and
following each subsequent sector erase command. If
DQ3 is high on the second status check, the last command might not have been accepted. Table 5 shows
the outputs for DQ3.
Write Operation Status
Operation
DQ7
(Note 1)
DQ6
DQ5
(Note 2)
DQ3
DQ7#
Toggle
0
N/A
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
0
Toggle
0
1
Erase
Suspend
Mode
Reading within Erase Suspended Sector
1
No toggle
0
N/A
Data
Data
Data
Data
Reading within Non-Erase Suspended Sector
Notes:
1. DQ7 requires a valid address when reading status information. Refer to the appropriate subsection for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
16
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
20 ns
+0.8 V
Voltage with Respect to Ground
VCC (Note 1). . . . . . . . . . . . . . . . . . . . –2.0 V to +7.0 V
–0.5 V
A9 (Note 2). . . . . . . . . . . . . . . . . . . . –2.0 V to +13.0 V
–2.0 V
All other pins (Note 1) . . . . . . . . . . . . –2.0 V to +7.0 V
20 ns
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pin is –0.5 V. During
voltage transitions, inputs may overshoot VSS to –2.0 V
for periods of up to 20 ns. See Figure 5. Maximum DC
voltage on input and I/O pins is VCC + 0.5 V. During voltage transitions, input and I/O pins may overshoot to VCC
+ 2.0 V for periods up to 20 ns. See Figure 6.
2. Minimum DC input voltage on A9 pin is –0.5 V. During
voltage transitions, A9 pins may overshoot VSS to –2.0 V
for periods of up to 20 ns. See Figure 5. Maximum DC input voltage on A9 is +12.5 V which may overshoot to 14.0
V for periods up to 20 ns.
20 ns
Figure 5. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. No more than one output shorted at a time. Duration of
the short circuit should not be greater than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
20 ns
20 ns
Figure 6. Maximum Positive
Overshoot Waveform
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for ±5% devices . . . . . . . . . . .+4.75 V to +5.25 V
VCC for ±10% devices . . . . . . . . . .+4.50 V to +5.50 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
October 31, 2006 Am29F010B_00_C7
Am29F010B
17
D A T A
S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
±1.0
µA
50
µA
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH
12
30
mA
ICC2
VCC Active Write Current
(Notes 2, 3, 4)
CE# = VIL, OE# = VIH
30
40
mA
ICC3
VCC Standby Current
CE# and OE# = VIH
0.4
1.0
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.5
V
VID
Voltage for Autoselect and Sector
VCC = 5.0 V
Protect
10.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH
Output High Voltage
IOH = –2.5 mA, VCC = VCC Min
VLKO
Low VCC Lock-out Voltage
2.4
3.2
V
4.2
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC=VCCmax.
3. ICC active while Embedded Program or Embedded Erase Algorithm is in progress.
4. Not 100% tested.
18
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
DC CHARACTERISTICS (CONTINUED)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
±1.0
µA
50
µA
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Current (Notes 1, 2) CE# = VIL, OE# = VIH
12
30
mA
ICC2
VCC Active Current
(Notes 2, 3, 4)
CE# = VIL, OE# = VIH
30
40
mA
ICC3
VCC Standby Current (Note 5)
CE# = VCC ± 0.5 V, OE# = VIH
1
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Sector Protect
VCC = 5.25 V
10.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOH = –2.5 mA, VCC = VCC Min
0.85 VCC
V
IOH = –100 µA, VCC = VCC Min
VCC – 0.4
V
Low VCC Lock-out Voltage
3.2
4.2
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC=VCCmax.
3. ICC active while Embedded Program or Embedded Erase Algorithm is in progress.
4. Not 100% tested.
5. ICC3 = 20 µA max at extended temperatures (> +85°C).
October 31, 2006 Am29F010B_00_C7
Am29F010B
19
D A T A
S H E E T
TEST CONDITIONS
Table 6.
Test Specifications
5.0 V
Test Condition
Output Load
2.7 kΩ
Device
Under
Test
CL
-45
6.2 kΩ
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8
V
Output timing measurement
reference levels
1.5
2.0
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 7.
All others Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
20
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbol
JEDEC
Speed Options
Std
Parameter Description
Test Setup
-45
-55
-70
-90
-120
Unit
Min
45
55
70
90
120
ns
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
CE# = VIL
OE# = VIL
Max
45
55
70
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
45
55
70
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
30
30
35
50
ns
tEHQZ
tDF
Chip Enable to Output High Z
(Note 1)
Max
10
15
20
20
30
ns
tGHQZ
tDF
Output Enable to Output High Z
(Note 1)
Max
10
15
20
20
30
ns
tOEH
Output Enable Hold Time
(Note 1)
tOH
Output Hold Time From
Addresses CE# or OE#,
Whichever Occurs First
tAXQX
Read
Min
0
ns
Toggle and Data
Polling
Min
10
ns
Min
0
ns
Notes:
1. Not 100% tested.
2. See Figure 7 and Table 6 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
Figure 8. Read Operations Timings
October 31, 2006 Am29F010B_00_C7
Am29F010B
21
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter Symbol
Speed Options
JEDEC
Std
Parameter Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
35
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
20
20
30
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Min
0
ns
Read Recover Time Before Write
-45
-55
-70
-90
-120
Unit
45
55
70
90
120
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation (Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Chip/Sector Erase Operation (Note 2)
Typ
1.0
sec
VCC Set Up Time (Note 1)
Min
50
µs
tVCS
(OE# High to WE# Low)
25
30
35
45
50
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more informaiton.
22
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
DOUT
tVCS
VCC
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 9.
Program Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
30h
In
Progress
Complete
10 for Chip Erase
tVCS
VCC
Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 10.
October 31, 2006 Am29F010B_00_C7
Chip/Sector Erase Operation Timings
Am29F010B
23
D A T A
S H E E T
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 11.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
DQ6
High Z
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 12.
24
Toggle Bit Timings (During Embedded Algorithms)
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Alternate CE# Controlled Writes
Parameter Symbol
JEDEC
Speed Options
Standard
Parameter Description
-45
-55
-70
-90
-120
Unit
45
55
70
90
120
ns
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
35
45
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
20
20
30
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time (Note 1)
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation (Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Chip/Sector Erase Operation (Note 2)
Typ
1.0
sec
0
25
30
35
ns
45
50
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
October 31, 2006 Am29F010B_00_C7
Am29F010B
25
D A T A
S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tDS
tDH
DQ7#
Data
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 13.
Alternate CE# Controlled Write Operation Timings
ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Chip/Sector Erase Time
1.0
15
sec
Excludes 00h programming prior to
erasure (Note 4)
Byte Programming Time
7
300
µs
0.9
6.25
sec
Chip Programming Time (Note 3)
Excludes system-level overhead
(Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0 V VCC, 1 million cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for -45), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4
for further information on command definitions.
6. The device has a minimum guaranteed erase cycle endurance of 1 million cycles.
26
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
LATCHUP CHARACTERISTIC
Parameter Description
Input Voltage with respect to VSS on I/O pins
VCC Current
Min
Max
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.
TSOP PIN CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Test Conditions
Typ
Max
Unit
6
7.5
pF
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Typ
Max
Unit
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
PLCC AND PDIP PIN CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Test Conditions
Input Capacitance
VIN = 0
4
6
pF
COUT
Output Capacitance
VOUT = 0
8
12
pF
CIN2
Control Pin Capacitance
VPP = 0
8
12
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
October 31, 2006 Am29F010B_00_C7
Am29F010B
27
D A T A
S H E E T
PHYSICAL DIMENSIONS
PD 032—32-Pin Plastic DIP
Dwg rev AD; 10/99
28
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
PHYSICAL DIMENSIONS* (continued)
PL 032—32-Pin Plastic Leaded Chip Carrier
Dwg rev AH; 10/99
October 31, 2006 Am29F010B_00_C7
Am29F010B
29
D A T A
S H E E T
PHYSICAL DIMENSIONS* (continued)
TS 032—32-Pin Standard Thin Small Outline Package
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering.
30
Am29F010B
Am29F010B_00_C7 October 31, 2006
D A T A
S H E E T
REVISION SUMMARY
Revision A (August 12, 1999)
Ordering Information
Initial release. Th e Am29 F010 B replaces the
Am29F010A data sheet (22181B+1).
Revision C+1 (November 18, 2002)
Revision A+1 (September 22, 1999)
Deleted the PE (PDIP, Extended Temperature Range)
combination from the 45, 55, and 70 ns speed options.
Deleted burn-in option.
Device Bus Operations
Ordering Information
Sector Protection/Unprotection: Corrected the publication number for the programming supplement.
Operating Ranges
Revision A+2 (September 27, 1999)
Revision C+2 (September 22, 2004)
Erase and Programming Performance table
Added PB-Free option to Standard Ordering Matrix.
In Notes 1 and 6, corrected the erase cycle endurance
to 1 million cycles.
Updated Valid Combinations
Changed Case Temperature to Ambient Temperature.
Revision C+3 (April 5, 2005)
Revision B (November 12, 1999)
AC Characteristics—Figure 9. Program Operations
Timing and Figure 10. Chip/Sector Erase
Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Added PE nomenclature to Valid Combinations.
Revision C+4 (August 23, 2005)
Added Pb-free option for PLCC and PDIP packages.
Revision C+5 (January 4, 2006)
Deleted TSR032 32-pin Reverse TSOP option.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision C6 (July 27, 2006)
Revision C (November 28, 2000)
Added notice to first page of data sheet and cover
page.
Global
Added table of contents. Removed Preliminary status
from document.
Revision C7 (October 31, 2006)
Removed notice to first page of data sheet and cover
page.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products
Trademarks
Copyright ©1997-2006 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright ©2006 Spansion Inc. All rights reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are
trademarks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies
October 31, 2006 Am29F010B_00_C7
Am29F010B
31