BAS21J Single high-speed switching diode Rev. 01 — 8 March 2007 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n High switching speed: trr ≤ 50 ns n Low leakage current n Repetitive peak reverse voltage: VRRM ≤ 300 V n Excellent coplanarity and improved thermal behavior n Low capacitance: Cd ≤ 2 pF n Reverse voltage: VR ≤ 300 V n Very small and flat lead SMD plastic package 1.3 Applications n High-speed switching n General-purpose switching n Voltage clamping n Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter IF forward current IR reverse current VR reverse voltage trr reverse recovery time Conditions [1] VR = 250 V [2] Min Typ Max Unit - - 250 mA - - 150 nA - - 300 V - - 50 ns [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. BAS21J NXP Semiconductors Single high-speed switching diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 2 sym006 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number BAS21J Package Name Description Version SC-90 plastic surface-mounted package; 2 leads SOD323F 4. Marking Table 4. Marking codes Type number Marking code BAS21J AN BAS21J_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 2 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VR reverse voltage Min Max Unit - 300 V - 300 V - 250 mA - 1 A tp = 100 µs - 3 A tp = 1 ms - 2.3 A [1] IF forward current IFRM repetitive peak forward current tp ≤ 0.5 ms; δ ≤ 0.25 IFSM non-repetitive peak forward current square wave [2] tp = 10 ms - 1.7 A - 550 mW junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Ptot total power dissipation Tj Tamb ≤ 25 °C [3][4] [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] Tj = 25 °C prior to surge. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point in free air Typ Max Unit - - 230 K/W [3] - - 55 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Reflow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. BAS21J_1 Product data sheet Min [1][2] © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 3 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 1.1 V VF forward voltage IF = 100 mA IR reverse current VR = 250 V - - 150 nA VR = 250 V; Tj = 150 °C - - 50 µA - - 2 pF - - 50 ns Cd trr diode capacitance VR = 0 V; f = 1 MHz reverse recovery time [2] [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. BAS21J_1 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 4 of 10 BAS21J NXP Semiconductors Single high-speed switching diode mhc618 500 IF (mA) mbg703 102 IFSM (A) 400 10 300 200 1 (1) (2) 100 (3) 10−1 0 0 0.5 1 VF (V) 1 1.5 10 102 103 104 tp (µs) (1) Tamb = 150 °C Based on square wave currents. (2) Tamb = 75 °C Tj = 25 °C; prior to surge (3) Tamb = 25 °C Fig 1. Forward current as a function of forward voltage; typical values mhc619 102 IR (µA) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mhc621 0.42 Cd (pF) 10 0.38 1 0.34 10−1 10−2 0 40 80 120 160 200 Tj (°C) 0.3 0 20 30 40 VR (V) f = 1 MHz; Tamb = 25 °C VR = 250 V Fig 3. Reverse current as a function of junction temperature; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values BAS21J_1 Product data sheet 10 © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 5 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 8. Test information tr RS = 50 Ω tp t D.U.T. 10 % + IF IF V = VR + IF × RS SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω VR (1) 90 % mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms BAS21J_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 6 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 9. Package outline 1.35 1.15 0.80 0.65 0.5 0.3 1 2.7 2.3 1.8 1.6 2 0.25 0.10 0.40 0.25 Dimensions in mm 04-09-13 Fig 6. Package outline SOD323F (SC-90) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS21J [1] Package SOD323F Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 14. 11. Soldering 3.05 2.80 2.10 1.60 solder lands solder resist 1.65 0.95 0.50 0.60 occupied area solder paste 0.50 (2×) 001aab169 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reflow soldering footprint SOD323F (SC-90) BAS21J_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 7 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS21J_1 20070308 Product data sheet - - BAS21J_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 8 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BAS21J_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 8 March 2007 9 of 10 BAS21J NXP Semiconductors Single high-speed switching diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 March 2007 Document identifier: BAS21J_1